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SIE882DF-T1-GE3

SIE882DF-T1-GE3
Mfr. #:
SIE882DF-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 25V Vds 20V Vgs PolarPAK
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIE882DF-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIE882DF-T1-GE3 DatasheetSIE882DF-T1-GE3 Datasheet (P4-P6)SIE882DF-T1-GE3 Datasheet (P7-P9)SIE882DF-T1-GE3 Datasheet (P10)
ECAD Model:
Mehr Informationen:
SIE882DF-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Handelsname:
TrenchFET, PolarPAK
Verpackung:
Spule
Serie:
SIE
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Teil # Aliase:
SIE882DF-GE3
Tags
SIE8, SIE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 25V 47A 10-Pin PolarPAK T/R
***i-Key
MOSFET N-CH 25V 60A 10POLARPAK
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:60A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0014ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.7V ;RoHS Compliant: Yes
N-Channel PolarPAK® Power MOSFETs
Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.
Teil # Mfg. Beschreibung Aktie Preis
SIE882DF-T1-GE3
DISTI # SIE882DF-T1-GE3-ND		Vishay SiliconixMOSFET N-CH 25V 60A POLARPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$1.2028
SIE882DF-T1-GE3
DISTI # SIE882DF-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 25V 47A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE882DF-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$1.0900
  • 6000:$1.0900
  • 12000:$1.0900
  • 18000:$1.0900
  • 30000:$1.0900
SIE882DF-T1-GE3
DISTI # 781-SIE882DF-GE3		Vishay IntertechnologiesMOSFET 25V Vds 20V Vgs PolarPAK
RoHS: Compliant		0
  • 1:$2.5200
  • 10:$2.1000
  • 100:$1.6200
  • 500:$1.4200
  • 1000:$1.3600
  • 3000:$1.3500
SIE882DF-T1-GE3Vishay IntertechnologiesMOSFET 25V Vds 20V Vgs PolarPAK
RoHS: Compliant		Americas - 3000
  • 3000:$1.1210
  • 6000:$1.0590
  • 12000:$1.0270
  • 24000:$1.0110
Bild Teil # Beschreibung
SIE882DF-T1-GE3

Mfr.#: SIE882DF-T1-GE3

OMO.#: OMO-SIE882DF-T1-GE3

 MOSFET 25V Vds 20V Vgs PolarPAK
SIE882DF-T1-GE3

Mfr.#: SIE882DF-T1-GE3

OMO.#: OMO-SIE882DF-T1-GE3-VISHAY

 RF Bipolar Transistors MOSFET 25V 229A 125W 1.4mohm @ 10V
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von SIE882DF-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,51 $
2,51 $
10
2,09 $
20,90 $
100
1,62 $
162,00 $
500
1,41 $
705,00 $
1000
1,17 $
1 170,00 $
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