IPB80P03P4L-04

IPB80P03P4L-04
Mfr. #:
IPB80P03P4L-04
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB80P03P4L-04 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB80P03P4L-04 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
80 A
Rds On - Drain-Source-Widerstand:
4.1 mOhms
Vgs - Gate-Source-Spannung:
5 V
Qg - Gate-Ladung:
125 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
137 W
Aufbau:
Single
Qualifikation:
AEC-Q101
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
OptiMOS-P2
Transistortyp:
1 P-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Abfallzeit:
40 ns
Produktart:
MOSFET
Anstiegszeit:
11 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
140 ns
Typische Einschaltverzögerungszeit:
17 ns
Teil # Aliase:
IPB80P03P4L04ATMA1 IPB8P3P4L4XT SP000396284
Gewichtseinheit:
0.139332 oz
Tags
IPB80P03P4L, IPB80P03P4, IPB80P03, IPB80P, IPB8, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IPB80P03P4L04ATMA1
DISTI # V72:2272_06383799
Infineon Technologies AGTrans MOSFET P-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
948
  • 500:$0.8985
  • 250:$0.9931
  • 100:$1.1469
  • 25:$1.4540
  • 10:$1.6054
  • 1:$1.8114
IPB80P03P4L04ATMA1
DISTI # IPB80P03P4L04ATMA1TR-ND
Infineon Technologies AGMOSFET P-CH 30V 80A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1000:$1.0238
IPB80P03P4L04ATMA1
DISTI # 31280268
Infineon Technologies AGTrans MOSFET P-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
948
  • 500:$0.8985
  • 250:$0.9931
  • 100:$1.1469
  • 25:$1.4540
  • 10:$1.6054
  • 8:$1.8114
IPB80P03P4L04ATMA1
DISTI # IPB80P03P4L04ATMA1
Infineon Technologies AGTrans MOSFET P-CH 30V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB80P03P4L04ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$0.9239
  • 2000:$0.8909
  • 4000:$0.8589
  • 6000:$0.8299
  • 10000:$0.8149
IPB80P03P4L04ATMA1
DISTI # SP000396284
Infineon Technologies AGTrans MOSFET P-CH 30V 80A 3-Pin(2+Tab) TO-263 (Alt: SP000396284)
RoHS: Compliant
Min Qty: 1000
Europe - 0
  • 1000:€1.1569
  • 2000:€0.8989
  • 4000:€0.8339
  • 6000:€0.8079
  • 10000:€0.7769
IPB80P03P4L04ATMA1
DISTI # 34AC1662
Infineon Technologies AGMOSFET, AEC-Q101, P-CH, -30V, TO-263,Transistor Polarity:P Channel,Continuous Drain Current Id:-80A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.5V,Power RoHS Compliant: Yes995
  • 1:$2.0400
  • 10:$1.8000
  • 25:$1.6200
  • 50:$1.4500
  • 100:$1.2600
  • 250:$1.0800
  • 500:$0.9860
  • 1000:$0.9340
IPB80P03P4L-04
DISTI # 726-IPB80P03P4L-04
Infineon Technologies AGMOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2
RoHS: Compliant
7653
  • 1:$1.8900
  • 10:$1.6100
  • 100:$1.2900
  • 500:$1.1300
  • 1000:$0.9310
IPB80P03P4L04ATMA1
DISTI # 2781074
Infineon Technologies AGMOSFET, AEC-Q101, P-CH, -30V, TO-263
RoHS: Compliant
955
  • 5:$3.0100
  • 25:$2.6200
  • 100:$2.1400
IPB80P03P4L04ATMA1
DISTI # 2781074
Infineon Technologies AGMOSFET, AEC-Q101, P-CH, -30V, TO-263
RoHS: Compliant
955
  • 5:£0.8590
  • 25:£0.8550
  • 100:£0.8510
Bild Teil # Beschreibung
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OMO.#: OMO-ESP32-PICO-D4

RF System on a Chip - SoC SIP module ESP32 with 4MByte Flash, Dual Core MCU, Wi-Fi & Bluetooth Combo, LGA48-pin, 7*7mm
AT24CM02-SSHD-B

Mfr.#: AT24CM02-SSHD-B

OMO.#: OMO-AT24CM02-SSHD-B

EEPROM 2.5-5.5V, 1MHz, Ind Tmp, 8-SOIC-N
TPS63710DRRR

Mfr.#: TPS63710DRRR

OMO.#: OMO-TPS63710DRRR

Switching Voltage Regulators Low Noise, 1A Synch Invert Buck Convert
ESP32-WROOM-32

Mfr.#: ESP32-WROOM-32

OMO.#: OMO-ESP32-WROOM-32

WiFi Modules (802.11) SMD Module, ESP32-D0WDQ6, 32Mbits SPI flash, UART
F0603G0R02FNTR

Mfr.#: F0603G0R02FNTR

OMO.#: OMO-F0603G0R02FNTR

Surface Mount Fuses 0603 28mA 63V 0603
ESP32-WROOM-32

Mfr.#: ESP32-WROOM-32

OMO.#: OMO-ESP32-WROOM-32-ESPRESSIF-SYSTEMS

SMD MODULE, ESP32-D0WDQ6, 32MBIT
SHTC3

Mfr.#: SHTC3

OMO.#: OMO-SHTC3-SENSIRION

Humidity/Temperature Sensor Digital Serial (I2C) 4-Pin DFN EP T/R
AT24CM02-SSHD-B

Mfr.#: AT24CM02-SSHD-B

OMO.#: OMO-AT24CM02-SSHD-B-MICROCHIP-TECHNOLOGY

IC EEPROM 2M I2C 1MHZ 8SOIC
TPS63710DRRR

Mfr.#: TPS63710DRRR

OMO.#: OMO-TPS63710DRRR-TEXAS-INSTRUMENTS

IC REG BUCK ADJUSTABLE 1A 12SON
Verfügbarkeit
Aktie:
14
Auf Bestellung:
1997
Menge eingeben:
Der aktuelle Preis von IPB80P03P4L-04 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,88 $
1,88 $
10
1,60 $
16,00 $
100
1,28 $
128,00 $
500
1,12 $
560,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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