IXTN600N04T2

IXTN600N04T2
Mfr. #:
IXTN600N04T2
Hersteller:
Littelfuse
Beschreibung:
Discrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXTN600N04T2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTN600N04T2 DatasheetIXTN600N04T2 Datasheet (P4-P6)
ECAD Model:
Mehr Informationen:
IXTN600N04T2 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
Diskrete Halbleitermodule
RoHS:
Y
Typ:
TrenchT2 GigaMOS
Montageart:
SMD/SMT
Paket / Koffer:
SOT-227B
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
IXTN600N04
Verpackung:
Rohr
Ausgangsstrom:
600 A
Marke:
IXYS
Polarität des Transistors:
N-Kanal
Abfallzeit:
250 ns
Pd - Verlustleistung:
940 W
Produktart:
Diskrete Halbleitermodule
Anstiegszeit:
20 ns
Werkspackungsmenge:
10
Unterkategorie:
Diskrete Halbleitermodule
Handelsname:
HiPerFET
Gewichtseinheit:
1.058219 oz
Tags
IXTN6, IXTN, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 40 V 600 A 1.05 mO Chassis Mount GigaMOS TrenchT2 Mosfet - SOT-227B
***ical
Trans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
Teil # Mfg. Beschreibung Aktie Preis
IXTN600N04T2
DISTI # V99:2348_15878365
IXYS CorporationTrans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B
RoHS: Compliant
2
  • 500:$15.5400
  • 200:$16.3600
  • 100:$17.7500
  • 50:$18.3800
  • 25:$19.2500
  • 10:$20.8500
  • 5:$21.9300
  • 1:$22.7000
IXTN600N04T2
DISTI # IXTN600N04T2-ND
IXYS CorporationMOSFET N-CH 40V 600A SOT-227
RoHS: Compliant
Min Qty: 1
Container: Tube
370In Stock
  • 100:$21.7771
  • 10:$25.4990
  • 1:$27.5700
IXTN600N04T2
DISTI # 27158570
IXYS CorporationTrans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B
RoHS: Compliant
26
  • 500:$16.5984
  • 200:$17.4432
  • 100:$19.0080
  • 50:$19.5744
  • 25:$20.4480
  • 10:$22.2528
  • 5:$23.3664
  • 1:$24.0576
IXTN600N04T2
DISTI # 27472446
IXYS CorporationTrans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B
RoHS: Compliant
2
  • 1:$22.7000
IXTN600N04T2
DISTI # 747-IXTN600N04T2
IXYS CorporationDiscrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET
RoHS: Compliant
449
  • 1:$25.0600
  • 5:$24.3400
  • 10:$23.1800
  • 25:$21.3000
  • 50:$20.3900
  • 100:$19.8000
  • 200:$18.1700
IXTN600N04T2
DISTI # C1S331700073039
IXYS CorporationTrans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B
RoHS: Compliant
26
  • 25:$26.5000
  • 10:$28.7000
  • 5:$31.2000
  • 1:$38.0000
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ERA-3ARB303V

Mfr.#: ERA-3ARB303V

OMO.#: OMO-ERA-3ARB303V

Thin Film Resistors - SMD 0603 30Kohm 0.1% 10ppm AEC-Q200
ERA-3ARB303V

Mfr.#: ERA-3ARB303V

OMO.#: OMO-ERA-3ARB303V-PANASONIC

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ITS41K0S-ME-N

Mfr.#: ITS41K0S-ME-N

OMO.#: OMO-ITS41K0S-ME-N-270

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Verfügbarkeit
Aktie:
447
Auf Bestellung:
2430
Menge eingeben:
Der aktuelle Preis von IXTN600N04T2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
25,06 $
25,06 $
5
24,34 $
121,70 $
10
23,18 $
231,80 $
25
21,30 $
532,50 $
50
20,39 $
1 019,50 $
100
19,80 $
1 980,00 $
200
18,17 $
3 634,00 $
500
17,29 $
8 645,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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