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SI4166DY-T1-GE3

SI4166DY-T1-GE3
Mfr. #:
SI4166DY-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds 20V Vgs SO-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4166DY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4166DY-T1-GE3 DatasheetSI4166DY-T1-GE3 Datasheet (P4-P6)SI4166DY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
SI4166DY-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Serie:
SI4
Breite:
3.9 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Teil # Aliase:
SI4166DY-GE3
Gewichtseinheit:
0.006596 oz
Tags
SI4166DY-T, SI4166D, SI4166, SI416, SI41, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    T***r
    T***r
    DE

    Top! Works!

    2019-01-15
    E**u
    E**u
    PT

    works very well. recommend

    2019-04-11
    A***a
    A***a
    RU

    Works fine

    2019-04-14
***ure Electronics
Single N-Channel 30 V 3.9 mOhm 6.5 W Surface Mount Power Mosfet - SOIC-8
*** Source Electronics
MOSFET N-CH 30V 30.5A 8-SOIC / Trans MOSFET N-CH 30V 30.5A 8-Pin SOIC N T/R
***nell
MOSFET, N CH, 30V, 30.5A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:30.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:6.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI4166DY-T1-GE3
DISTI # SI4166DY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 30.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1130In Stock
  • 1000:$0.7138
  • 500:$0.9041
  • 100:$1.1659
  • 10:$1.4750
  • 1:$1.6700
SI4166DY-T1-GE3
DISTI # SI4166DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 30.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1130In Stock
  • 1000:$0.7138
  • 500:$0.9041
  • 100:$1.1659
  • 10:$1.4750
  • 1:$1.6700
SI4166DY-T1-GE3
DISTI # SI4166DY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 30.5A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.6468
SI4166DY-T1-GE3
DISTI # SI4166DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 20.5A 8-Pin SOIC N T/R (Alt: SI4166DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI4166DY-T1-GE3
    DISTI # SI4166DY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 20.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4166DY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 2500:$0.6329
    • 5000:$0.6319
    • 10000:$0.6299
    • 15000:$0.6279
    • 25000:$0.6269
    SI4166DY-T1-GE3
    DISTI # SI4166DY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 20.5A 8-Pin SOIC N T/R (Alt: SI4166DY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 2500:€0.6869
    • 5000:€0.4689
    • 10000:€0.4029
    • 15000:€0.3719
    • 25000:€0.3469
    SI4166DY-T1-GE3
    DISTI # 85W3205    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 20.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 85W3205)
    RoHS: Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1:$0.7990
    SI4166DY-T1-GE3
    DISTI # 97W2647    		Vishay IntertechnologiesMOSFET, N CH, 30V, 30.5A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:30.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0032ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V,Power , RoHS Compliant: Yes2250
    • 1:$1.4700
    • 10:$1.2100
    • 25:$1.1200
    • 50:$1.0200
    • 100:$0.9290
    • 500:$0.7990
    • 1000:$0.7010
    SI4166DY-T1-GE3
    DISTI # 781-SI4166DY-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
    RoHS: Compliant    		4268
    • 1:$1.4700
    • 10:$1.2100
    • 100:$0.9290
    • 500:$0.7990
    • 1000:$0.7560
    • 2500:$0.7000
    SI4166DY-T1-GE3
    DISTI # 2335305    		Vishay IntertechnologiesMOSFET, N CH, 30V, 30.5A, SOIC
    RoHS: Compliant    		2250
    • 1:$2.3400
    • 10:$1.9200
    • 100:$1.4700
    • 500:$1.2600
    • 1000:$1.1200
    • 2500:$1.1100
    SI4166DY-T1-GE3
    DISTI # 2335305    		Vishay IntertechnologiesMOSFET, N CH, 30V, 30.5A, SOIC
    RoHS: Compliant    		4741
    • 5:£1.1300
    • 25:£0.9270
    • 100:£0.7100
    • 250:£0.6610
    • 500:£0.6100
    SI4166DY-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
    RoHS: Compliant    		Americas - 5000
    • 2500:$0.4080
    • 5000:$0.3860
    • 10000:$0.3730
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1986
    Menge eingeben:
    Der aktuelle Preis von SI4166DY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,47 $
    1,47 $
    10
    1,21 $
    12,10 $
    100
    0,93 $
    92,90 $
    500
    0,80 $
    399,50 $
    1000
    0,76 $
    756,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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