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IPB65R310CFDATMA1

IPB65R310CFDATMA1
Mfr. #:
IPB65R310CFDATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 650V 11.4A D2PAK-2 CoolMOS CFD2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB65R310CFDATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB65R310CFDATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
11.4 A
Rds On - Drain-Source-Widerstand:
280 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
41 nC
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
104.2 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
CoolMOS CFDA
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Abfallzeit:
7 ns
Produktart:
MOSFET
Anstiegszeit:
7.5 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
45 ns
Typische Einschaltverzögerungszeit:
11 ns
Teil # Aliase:
IPB65R310CFD IPB65R31CFDXT SP000745032
Gewichtseinheit:
0.139332 oz
Tags
IPB65R310CFDA, IPB65R31, IPB65R3, IPB65, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 700V 11.4A 3-Pin(2+Tab) D2PAK T/R
***p One Stop Japan
Trans MOSFET N-CH 700V 11.4A 3-Pin(2+Tab) TO-263
***et
Trans MOSFET N-CH 650V 11.4A 3-Pin TO-263 T/R
***i-Key
LOW POWER_LEGACY
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 11.4A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:11.4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:104.2W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFD2 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 650V, 11,4A, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:11.4A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.28ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:104.2W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFD2 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPB65R310CFDATMA1
DISTI # V72:2272_06382969		Infineon Technologies AGTrans MOSFET N-CH 700V 11.4A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		668
  • 500:$1.3103
  • 250:$1.4925
  • 100:$1.5082
  • 25:$1.8660
  • 10:$1.8862
  • 1:$2.2019
IPB65R310CFDATMA1
DISTI # V36:1790_06382969		Infineon Technologies AGTrans MOSFET N-CH 700V 11.4A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
    IPB65R310CFDATMA1
    DISTI # IPB65R310CFDATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 650V 11.4A TO263
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		On Order
    • 5000:$1.1580
    • 2000:$1.2026
    • 1000:$1.2916
    IPB65R310CFDATMA1
    DISTI # IPB65R310CFDATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 650V 11.4A TO263
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 500:$1.6056
    • 100:$2.0644
    • 10:$2.5690
    • 1:$2.8400
    IPB65R310CFDATMA1
    DISTI # IPB65R310CFDATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 650V 11.4A TO263
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 500:$1.6056
    • 100:$2.0644
    • 10:$2.5690
    • 1:$2.8400
    IPB65R310CFDATMA1
    DISTI # 32874623    		Infineon Technologies AGTrans MOSFET N-CH 700V 11.4A Automotive 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		668
    • 500:$1.4086
    • 250:$1.6044
    • 100:$1.6213
    • 25:$2.0059
    • 10:$2.0277
    • 6:$2.3670
    IPB65R310CFDATMA1
    DISTI # IPB65R310CFDATMA1    		Infineon Technologies AGTrans MOSFET N-CH 700V 11.4A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB65R310CFDATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 1000:$1.1659
    • 2000:$1.1239
    • 4000:$1.0839
    • 6000:$1.0469
    • 10000:$1.0279
    IPB65R310CFDATMA1
    DISTI # SP000745032    		Infineon Technologies AGTrans MOSFET N-CH 700V 11.4A 3-Pin(2+Tab) TO-263 (Alt: SP000745032)
    RoHS: Compliant
    Min Qty: 1000    		Europe - 0
    • 1000:€1.3479
    • 2000:€1.1229
    • 4000:€1.0369
    • 6000:€0.9629
    • 10000:€0.8989
    IPB65R310CFDATMA1
    DISTI # 34AC1659    		Infineon Technologies AGMOSFET, N-CH, 650V, 11.4A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:11.4A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.28ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes0
    • 500:$1.4100
    • 250:$1.5200
    • 100:$1.6200
    • 50:$1.7500
    • 25:$1.8900
    • 10:$2.0200
    • 1:$2.3800
    IPB65R310CFDATMA1
    DISTI # 726-IPB65R310CFDATMA    		Infineon Technologies AGMOSFET N-Ch 650V 11.4A D2PAK-2 CoolMOS CFD2
    RoHS: Compliant    		980
    • 1:$2.3800
    • 10:$2.0200
    • 100:$1.6200
    • 500:$1.4100
    • 1000:$1.1700
    • 2000:$1.0900
    • 5000:$1.0500
    IPB65R310CFD
    DISTI # 726-IPB65R310CFD    		Infineon Technologies AGMOSFET N-Ch 650V 11.4A D2PAK-2 CoolMOS CFD2
    RoHS: Compliant    		0
    • 1:$2.3800
    • 10:$2.0200
    • 100:$1.6200
    • 500:$1.4100
    • 1000:$1.1700
    • 2000:$1.0900
    • 5000:$1.0500
    IPB65R310CFDATMA1
    DISTI # 2781165    		Infineon Technologies AGMOSFET, N-CH, 650V, 11.4A, TO-263
    RoHS: Compliant    		0
    • 100:$2.0300
    • 10:$2.2900
    • 1:$2.4500
    IPB65R310CFDATMA1
    DISTI # 2781165    		Infineon Technologies AGMOSFET, N-CH, 650V, 11.4A, TO-263
    RoHS: Compliant    		0
    • 500:£1.1000
    • 250:£1.1800
    • 100:£1.2600
    • 10:£1.5900
    • 1:£2.1200
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1985
    Menge eingeben:
    Der aktuelle Preis von IPB65R310CFDATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,38 $
    2,38 $
    10
    2,02 $
    20,20 $
    100
    1,62 $
    162,00 $
    500
    1,41 $
    705,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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