STGD8NC60KDT4

Mfr. #:: STGD8NC60KDT4
Hersteller:: STMicroelectronics
Beschreibung:: IGBT Transistors N Ch 55V 6.5mohm 80A Pwr MOSFET
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: STGD8NC60KDT4 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: STGD8NC60KDT4 Mehr Informationen STGD8NC60KDT4 Product Details

Produkteigenschaft
Attributwert

Hersteller:: STMicroelectronics

Produktkategorie:: IGBT-Transistoren

RoHS:: Y

Technologie:: Si

Paket / Koffer:: DPAK-3

Montageart:: SMD/SMT

Aufbau:: Single

Kollektor- Emitterspannung VCEO Max:: 600 V

Maximale Gate-Emitter-Spannung:: 20 V

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Serie:: STGD8NC60KD

Verpackung:: Spule

Kontinuierlicher Kollektorstrom Ic Max:: 15 A

Höhe:: 2.4 mm

Länge:: 6.6 mm

Breite:: 6.2 mm

Marke:: STMicroelectronics

Produktart:: IGBT-Transistoren

Werkspackungsmenge:: 2500

Unterkategorie:: IGBTs

Gewichtseinheit:: 0.012346 oz

Tags: STGD8NC60KD, STGD8, STGD, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGD8NC60KDT4 Beschreibung

***ical: Trans IGBT Chip N-CH 600V 15A 62000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: New short circuit rugged "K" series

***r Electronics: Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel

***ser: Power MOSFET Transistors N Ch 55V 6.5mohm 80A Pwr MOSFET

***nell: IGBT, SINGLE, 600V, 15A, TO-252; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 62W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: PowerMESH Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

***ical: Trans IGBT Chip N-CH 600V 15A 56000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: N-channel 600 V, 7 A very fast IGBT

***roFlash: Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-252AA

***ser: IGBTs Insulated Gate Bipolar Transistor PowerMESH" IGBT

***icroelectronics SCT: Short-circuit rugged IGBT, DPAK, Tape and Reel

***ment14 APAC: IGBT, SINGLE, 600V, 15A, TO-252-3

*** Electronic Components: IGBT Transistors PowerMESH" IGBT

***ponent Stockers USA: 15 A 600 V N-CHANNEL IGBT TO-252AA

*** Stop Electro: Insulated Gate Bipolar Transistors

***nell: IGBT, SINGLE, 600V, 15A, TO-252-3; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: PowerMESH Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

***ical: Trans IGBT Chip N-CH 600V 16A 56000mW 3-Pin(2+Tab) DPAK T/R

*** Electronics: ON SEMICONDUCTOR NGTB05N60R2DT4G IGBT Single Transistor, 16 A, 1.65 V, 56 W, 600 V, TO-252, 3 Pins

*** Stop Electro: Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel

***ment14 APAC: IGBT, SINGLE, 600V, 16A, TO-252-3

***nell: IGBT, SINGLE, 600V, 16A, TO-252-3; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ical: Trans IGBT Chip N-CH 600V 20A 62000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: 10 A, 600 V short-circuit rugged IGBT

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel

*** Electronic Components: IGBT Transistors N Ch 600V 10A

***ark: Ptd High Voltage Rohs Compliant: Yes

***nell: IGBT, D-PAK; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temper

***ical: Trans IGBT Chip N-CH 600V 20A 72000mW 3-Pin(2+Tab) DPAK T/R

*** Electronics: ON SEMICONDUCTOR NGTB10N60R2DT4G IGBT Single Transistor, 20 A, 1.7 V, 72 W, 600 V, TO-252, 3 Pins

***r Electronics: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel

***ment14 APAC: IGBT, SINGLE, 600V, 20A, TO-252-3

***nell: IGBT, SINGLE, 600V, 20A, TO-252-3; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 72W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ical: Trans IGBT Chip N-CH 600V 9A 49000mW 3-Pin(2+Tab) DPAK T/R

***el Electronic: ON SEMICONDUCTOR NGTB03N60R2DT4G IGBT Single Transistor, 9 A, 1.7 V, 49 W, 600 V, TO-252, 3 Pins

***r Electronics: Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel

***ment14 APAC: IGBT, SINGLE, 600V, 9A, TO-252-3

***nell: IGBT, SINGLE, 600V, 9A, TO-252-3; DC Collector Current: 9A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 49W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ical: Trans IGBT Chip N-CH 600V 7.5A 38000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: 4.5 A, 600 V very fast IGBT with Ultrafast diode

***ment14 APAC: 3/4.5 A, 600 V VERY FAST IGBT; DC Collector Current:7.5A; Emitter Saturation Voltage Vce(on):2.45V; Power Dissipation Pd:38W;

***nell: IGBT, W DIODE, 600V, 7.5A, 38W, DPAK; Transistor Type:IGBT; DC Collector Current:7.5A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:38W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:38W

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
STGD8NC60KDT4 DISTI # V72:2272_17751169	STMicroelectronics	Trans IGBT Chip N-CH 600V 15A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2405	1000:$0.5078 500:$0.5377 250:$0.6945 100:$0.7020 25:$0.8703 10:$0.8806 1:$1.0060
STGD8NC60KDT4 DISTI # 497-7988-1-ND	STMicroelectronics	IGBT 600V 15A 62W DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
STGD8NC60KDT4 DISTI # 497-7988-6-ND	STMicroelectronics	IGBT 600V 15A 62W DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
STGD8NC60KDT4 DISTI # 497-7988-2-ND	STMicroelectronics	IGBT 600V 15A 62W DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.5557
STGD8NC60KDT4 DISTI # 26936267	STMicroelectronics	Trans IGBT Chip N-CH 600V 15A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2405	1000:$0.5078 500:$0.5377 250:$0.6945 100:$0.7020 25:$0.8703 14:$0.8806
STGD8NC60KDT4 DISTI # STGD8NC60KDT4	STMicroelectronics	Trans IGBT Chip N-CH 600V 15A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: STGD8NC60KDT4) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5659 5000:$0.5399 10000:$0.5149 15000:$0.4919 25000:$0.4819
STGD8NC60KDT4 DISTI # STGD8NC60KDT4	STMicroelectronics	Trans IGBT Chip N-CH 600V 15A 3-Pin(2+Tab) DPAK T/R (Alt: STGD8NC60KDT4) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.7609 5000:€0.6219 10000:€0.5709 15000:€0.5269 25000:€0.4889
STGD8NC60KDT4 DISTI # 61AC2093	STMicroelectronics	IGBT, SINGLE, 600V, 15A, TO-252,DC Collector Current:15A,Collector Emitter Saturation Voltage Vce(on):2.2V,Power Dissipation Pd:62W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-252,No. of Pins:3Pins,, RoHS Compliant: Yes	2400	1:$1.2500 10:$1.0600 25:$0.9780 50:$0.8950 100:$0.8130 250:$0.7660 500:$0.7190 1000:$0.5670
STGD8NC60KDT4 DISTI # 511-STGD8NC60KDT4	STMicroelectronics	IGBT Transistors N Ch 55V 6.5mohm 80A Pwr MOSFET RoHS: Compliant	4884	1:$1.2500 10:$1.0600 100:$0.8130 500:$0.7190 1000:$0.5670 2500:$0.5030 10000:$0.4840
STGD8NC60KDT4	STMicroelectronics	INSTOCK	400
STGD8NC60KDT4 DISTI # C1S730200709589	STMicroelectronics	Trans IGBT Chip N-CH 600V 15A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2405	250:$0.6283 100:$0.7000 25:$0.7981 10:$0.8753
STGD8NC60KDT4 DISTI # 2889920	STMicroelectronics	IGBT, SINGLE, 600V, 15A, TO-252 RoHS: Compliant	2400	5:£0.5330 25:£0.5220 100:£0.5120
STGD8NC60KDT4 DISTI # 2889920	STMicroelectronics	IGBT, SINGLE, 600V, 15A, TO-252 RoHS: Compliant	2380	5:$2.2300 25:$1.9100 100:$1.4500 250:$1.2200 500:$1.0500 1000:$1.0100 5000:$0.9730

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1985
Menge eingeben:

Der aktuelle Preis von STGD8NC60KDT4 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,25 $~~; ~~1,25 $~~

10: ~~1,06 $~~; ~~10,60 $~~

100: ~~0,81 $~~; ~~81,30 $~~

500: ~~0,72 $~~; ~~359,50 $~~

1000: ~~0,57 $~~; ~~567,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

STGD8NC60KD 3
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STGD 81
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STGD8NC60KDT4

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes