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BFP 410 H6327

BFP 410 H6327
Mfr. #:
BFP 410 H6327
Hersteller:
Infineon Technologies
Beschreibung:
RF Bipolar Transistors RF BIP TRANSISTORS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BFP 410 H6327 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BFP 410 H6327 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
HF-Transistoren (BJT)
Serie
BFP410
Verpackung
Spule
Teil-Aliasnamen
BFP410H6327XT BFP410H6327XTSA1 SP000762244
Montageart
SMD/SMT
Paket-Koffer
SOT-343
Technologie
Si
Transistor-Typ
Bipolar
Pd-Verlustleistung
150 mW
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Arbeitsfrequenz
25 GHz
Kollektor-Emitter-Spannung-VCEO-Max
4.5 V
Transistor-Polarität
NPN
Emitter-Basis-Spannung-VEBO
1.5 V
Kontinuierlicher Kollektorstrom
40 mA
DC-Kollektor-Basis-Gain-hfe-Min
60
Tags
BFP410H, BFP41, BFP4, BFP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
RF Transistors
Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14 GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29 dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.
Teil # Mfg. Beschreibung Aktie Preis
BFP410H6327XTSA1
DISTI # V72:2272_06391087		Infineon Technologies AGTrans RF BJT NPN 4.5V 0.04A Automotive 4-Pin(3+Tab) SOT-343 T/R
RoHS: Compliant		2988
  • 75000:$0.1397
  • 30000:$0.1412
  • 15000:$0.1428
  • 6000:$0.1444
  • 3000:$0.1459
  • 1000:$0.1475
  • 500:$0.1759
  • 250:$0.2175
  • 100:$0.2581
  • 50:$0.3115
  • 25:$0.4127
  • 10:$0.5007
  • 1:$0.6583
BFP410H6327XTSA1
DISTI # BFP410H6327XTSA1TR-ND		Infineon Technologies AGRF TRANS NPN 5V 25GHZ SOT343
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.1449
BFP410H6327XTSA1
DISTI # 32628698		Infineon Technologies AGTrans RF BJT NPN 4.5V 0.04A Automotive 4-Pin(3+Tab) SOT-343 T/R
RoHS: Compliant		498000
  • 3000:$0.1505
BFP410H6327XTSA1
DISTI # 26195753		Infineon Technologies AGTrans RF BJT NPN 4.5V 0.04A Automotive 4-Pin(3+Tab) SOT-343 T/R
RoHS: Compliant		2988
  • 75000:$0.1502
  • 30000:$0.1518
  • 15000:$0.1535
  • 6000:$0.1552
  • 3000:$0.1568
  • 1000:$0.1586
  • 500:$0.1891
  • 250:$0.2338
  • 100:$0.2775
  • 54:$0.3349
BFP 410 H6327
DISTI # BFP 410 H6327		Infineon Technologies AGTrans GP BJT NPN 4.5V 0.04A 4-Pin(3+Tab) SOT-343 T/R (Alt: BFP 410 H6327)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 15000
  • 6000:$0.0225
  • 3000:$0.1125
BFP410H6327XTSA1
DISTI # BFP410H6327XTSA1		Infineon Technologies AGTrans GP BJT NPN 4.5V 0.04A 4-Pin(3+Tab) SOT-343 T/R - Tape and Reel (Alt: BFP410H6327XTSA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.1179
  • 18000:$0.1199
  • 12000:$0.1249
  • 6000:$0.1289
  • 3000:$0.1339
BFP410H6327XTSA1
DISTI # SP000762244		Infineon Technologies AGTrans GP BJT NPN 4.5V 0.04A 4-Pin(3+Tab) SOT-343 T/R (Alt: SP000762244)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.1179
  • 18000:€0.1269
  • 12000:€0.1499
  • 6000:€0.1839
  • 3000:€0.2359
BFP 410 H6327
DISTI # 726-BFP410H6327		Infineon Technologies AGRF Bipolar Transistors RF BIP TRANSISTORS
RoHS: Compliant		2952
  • 1:$0.4100
  • 10:$0.3380
  • 100:$0.2060
  • 1000:$0.1590
  • 3000:$0.1360
BFP410H6327Infineon Technologies AG 2294
    BFP410H6327XTSA1
    DISTI # 2726097    		Infineon Technologies AGRF TRANSISTOR, NPN, 4.5V, 25GHZ, SOT-343
    RoHS: Compliant    		2941
    • 1000:$0.2120
    • 500:$0.2250
    • 250:$0.2600
    • 100:$0.3070
    • 10:$0.3770
    • 1:$0.4320
    BFP410H6327XTSA1
    DISTI # 2726097    		Infineon Technologies AGRF TRANSISTOR, NPN, 4.5V, 25GHZ, SOT-3432854
    • 500:£0.1010
    • 250:£0.1030
    • 100:£0.1060
    • 25:£0.1080
    • 5:£0.1100
    BFP410H6327Infineon Technologies AG4.5V,40mA,Bipolar RF NPN Transistor2400
    • 1:$0.2200
    • 100:$0.1900
    • 500:$0.1600
    • 1000:$0.1600
    Bild Teil # Beschreibung
    BFP 410 H6327

    Mfr.#: BFP 410 H6327

    OMO.#: OMO-BFP-410-H6327

    		 RF Bipolar Transistors RF BIP TRANSISTORS
    BFP 410 H6327

    Mfr.#: BFP 410 H6327

    OMO.#: OMO-BFP-410-H6327-317

    		 RF Bipolar Transistors RF BIP TRANSISTORS
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4000
    Menge eingeben:
    Der aktuelle Preis von BFP 410 H6327 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,03 $
    0,03 $
    10
    0,03 $
    0,32 $
    100
    0,03 $
    3,04 $
    500
    0,03 $
    14,35 $
    1000
    0,03 $
    27,00 $
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