CSD18542KTTT

Mfr. #:: CSD18542KTTT
Beschreibung:: MOSFET 60V N-Channel NexFET Pwr MOSFET
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: CSD18542KTTT Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: CSD18542KTTT Mehr Informationen CSD18542KTTT Product Details

Produkteigenschaft
Attributwert

Hersteller:: Texas Instruments

Produktkategorie:: MOSFET

RoHS:: E

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TO-263-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 60 V

Id - Kontinuierlicher Drainstrom:: 200 A

Rds On - Drain-Source-Widerstand:: 4 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1.8 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 44 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 175 C

Pd - Verlustleistung:: 250 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: NexFET

Verpackung:: Spule

Höhe:: 19.7 mm

Länge:: 9.25 mm

Serie:: CSD18542KTT

Transistortyp:: 1 N-Channel

Breite:: 10.26 mm

Marke:: Texas Instruments

Vorwärtstranskonduktanz - Min:: 198 S

Entwicklungs-Kit:: -

Abfallzeit:: 2 ns

Feuchtigkeitsempfindlich:: ja

Produktart:: MOSFET

Anstiegszeit:: 4 ns

Werkspackungsmenge:: 50

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 2 ns

Typische Einschaltverzögerungszeit:: 6 ns

Tags: CSD18542, CSD1854, CSD185, CSD18, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD18542KTTT Beschreibung

***as Instruments: 60V, N ch NexFET MOSFET™, single D2PAK, 4mOhm 3-DDPAK/TO-263 -55 to 175

***et: 60V N-Channel NexFET Power MOSFET

***ark: Mosfet, N-Ch, 60V, 170A, To-263-3

***i-Key: MOSFET N-CH 60V 200A DDPAK

***ical: Surface Mount Resistor Metal Film

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 60V, 170A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:250W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 2 - 1 year; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CA-N, 60V, 170A, TO-263-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:170A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0033ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.8V; Dissipazione di Potenza Pd:250W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 2 - 1 anno; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***AS INSTRUMENT: This 60-V, 3.3-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

CSD18542KTTT Mehr Informationen

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

Teil #	Beschreibung	Aktie	Preis
CSD18542KTTT DISTI # V72:2272_14839653	Trans MOSFET N-CH Si 60V 200A 4-Pin(3+Tab) TO-263 T/R RoHS: Compliant	26	25:$1.6235 10:$1.8039 1:$2.3487
CSD18542KTTT DISTI # V39:1801_14839653	Trans MOSFET N-CH Si 60V 200A 4-Pin(3+Tab) TO-263 T/R RoHS: Compliant	0
CSD18542KTTT DISTI # 296-44124-1-ND	MOSFET N-CH 60V 200A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1016In Stock	10:$2.5980 1:$2.8800
CSD18542KTTT DISTI # 296-44124-6-ND	MOSFET N-CH 60V 200A DDPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1016In Stock	10:$2.5980 1:$2.8800
CSD18542KTTT DISTI # 296-44124-2-ND	MOSFET N-CH 60V 200A D2PAK RoHS: Compliant Min Qty: 50 Container: Tape & Reel (TR)	1000In Stock	250:$1.8020 100:$2.0273 50:$2.2526
CSD18542KTTT DISTI # 32365686	Trans MOSFET N-CH Si 60V 200A 4-Pin(3+Tab) TO-263 T/R RoHS: Compliant	4150	250:$1.4836 100:$1.6646 50:$1.8456
CSD18542KTTT DISTI # 25809625	Trans MOSFET N-CH Si 60V 200A 4-Pin(3+Tab) TO-263 T/R RoHS: Compliant	26	25:$1.7453 10:$1.9392 6:$2.5249
CSD18542KTTT DISTI # CSD18542KTTT	60V N-Channel NexFET Power MOSFET - Tape and Reel (Alt: CSD18542KTTT) RoHS: Not Compliant Min Qty: 300 Container: Reel	Americas - 0	1500:$1.0900 3000:$1.0900 600:$1.1900 900:$1.1900 300:$1.2900
CSD18542KTTT	60V, N ch NexFET MOSFET™, single D2PAK, 4mOhm	1000	1000:$1.0200 750:$1.0700 500:$1.2700 250:$1.5000 100:$1.6000 25:$1.8200 10:$1.9600 1:$2.1700
CSD18542KTTT DISTI # 595-CSD18542KTTT	MOSFET 60V N-Channel NexFET Pwr MOSFET RoHS: Compliant	2315	1:$2.1500 10:$1.8300 50:$1.8300 100:$1.4600 500:$1.2800 1000:$1.0600 2500:$0.9870 5000:$0.9510
CSD18542KTT DISTI # 595-CSD18542KTT	MOSFET KTT pkg spin from CSD18542KCS RoHS: Compliant	221	1:$2.4100 10:$2.0500 100:$1.6400 500:$1.4300 1000:$1.1800 2500:$1.1000 5000:$1.0600
CSD18542KTTT DISTI # CSD18542KTTT	Transistor: N-MOSFET,unipolar,60V,200A,250W,D2PAK	109	3:$2.0000 1:$2.2300
CSD18542KTTT . DISTI # 2545002	MOSFET, N-CH, 60V, 170A, TO-263-3 RoHS: Compliant	1627	500:£1.3100 250:£1.3400 100:£1.3700 10:£1.4000 1:£1.6400
CSD18542KTTT . DISTI # 2545002	MOSFET, N-CH, 60V, 170A, TO-263-3 RoHS: Compliant	1627	10:$3.2300 1:$3.5600

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1985
Menge eingeben:

Der aktuelle Preis von CSD18542KTTT dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~2,15 $~~; ~~2,15 $~~

10: ~~1,83 $~~; ~~18,30 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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CSD18542KTTT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes