IRFH5255TR2PBF

IRFH5255TR2PBF
Mfr. #:
IRFH5255TR2PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 25V 15A 8VQFN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFH5255TR2PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IRFH525, IRFH52, IRFH5, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
***(Formerly Allied Electronics)
MOSFET, 25V, 51A, 6 mOhm, 7 nC Qg, Low Rg, PQFN
***C
Trans MOSFET N-CH 25V 15A 8-Pin PQFN T/R Trans MOSFET N-CH 25V 15A 8-Pin PQFN T/R Trans MOSFET N-CH 25V 15A 8-Pin PQFN T/R
***ment14 APAC
MOSFET, N CH, 25V, 51A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:25V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:26W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:51A; Power Dissipation Pd:26W; Voltage Vgs Max:20V
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
***(Formerly Allied Electronics)
MOSFET, 30V, 40A, 4.3 MOHM, 13 NC QG, 1.1 OHM RG, MONOFETKY, PQFN 3.3X3.3
***ment14 APAC
MOSFET,N CH,SCH DIODE,30V,20A,PQFN33; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):3400µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:20A; Power Dissipation Pd:2.8W; Voltage Vgs Max:20V
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Schottky intrinsic diode with low forward voltage; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***ure Electronics
Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
***et
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R
***nell
MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:20V
***ineon
Benefits: RoHS Compliant; Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package
***p One Stop
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R
***nell
MOSFET,W DIODE,N CH,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Voltage Vgs Max:20V
Teil # Mfg. Beschreibung Aktie Preis
IRFH5255TR2PBF
DISTI # IRFH5255TR2PBFCT-ND
Infineon Technologies AGMOSFET N-CH 25V 15A 8VQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    IRFH5255TR2PBF
    DISTI # IRFH5255TR2PBFDKR-ND
    Infineon Technologies AGMOSFET N-CH 25V 15A 8VQFN
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      IRFH5255TR2PBF
      DISTI # 70019256
      Infineon Technologies AGMOSFET,25V,51A,6 mOhm,7 nC Qg,Low Rg,PQFN
      RoHS: Compliant
      0
      • 800:$0.5380
      • 1000:$0.5000
      • 2500:$0.4860
      IRFH5255TR2PBF
      DISTI # 942-IRFH5255TR2PBF
      Infineon Technologies AGMOSFET MOSFT 25V 51A 6mOhm 7nC Qg Lw Rg
      RoHS: Compliant
      0
        IRFH5255TR2PBFInternational Rectifier 183
          IRFH5255TR2PBFInternational Rectifier 
          RoHS: Compliant
          1200
            Bild Teil # Beschreibung
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            Mfr.#: IRFH5250TRPBF

            OMO.#: OMO-IRFH5250TRPBF

            MOSFET 25V 1 N-CH HEXFET 1.15mOhms 52nC
            IRFH5250DTRPBF

            Mfr.#: IRFH5250DTRPBF

            OMO.#: OMO-IRFH5250DTRPBF

            MOSFET 25V 1 N-CH HEXFET 1.4mOhms 39nC
            IRFH5250DTR2PBF

            Mfr.#: IRFH5250DTR2PBF

            OMO.#: OMO-IRFH5250DTR2PBF

            MOSFET MOSFT 25V FETky 100A 1.4mOhm 39nC Qg
            IRFH5250DTRPBF.

            Mfr.#: IRFH5250DTRPBF.

            OMO.#: OMO-IRFH5250DTRPBF--1190

            TRENCH_MOSFETS , ROHS COMPLIANT: YES
            IRFH5250DTR2PBF

            Mfr.#: IRFH5250DTR2PBF

            OMO.#: OMO-IRFH5250DTR2PBF-INFINEON-TECHNOLOGIES

            MOSFET N-CH 25V 40A 8VQFN
            IRFH5250TR2PBF

            Mfr.#: IRFH5250TR2PBF

            OMO.#: OMO-IRFH5250TR2PBF-INFINEON-TECHNOLOGIES

            MOSFET N-CH 25V 45A PQFN
            IRFH5255TR2PBF

            Mfr.#: IRFH5255TR2PBF

            OMO.#: OMO-IRFH5255TR2PBF-INFINEON-TECHNOLOGIES

            MOSFET N-CH 25V 15A 8VQFN
            IRFH5250DTRPBF

            Mfr.#: IRFH5250DTRPBF

            OMO.#: OMO-IRFH5250DTRPBF-INFINEON-TECHNOLOGIES

            MOSFET N-CH 25V 40A 8VQFN
            IRFH5250TRPBF

            Mfr.#: IRFH5250TRPBF

            OMO.#: OMO-IRFH5250TRPBF-INFINEON-TECHNOLOGIES

            MOSFET N-CH 25V 45A PQFN
            IRFH5255TRPBF

            Mfr.#: IRFH5255TRPBF

            OMO.#: OMO-IRFH5255TRPBF-INFINEON-TECHNOLOGIES

            RF Bipolar Transistors MOSFET 25V 1 N-CH HEXFET 6mOhms 7nC
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            2500
            Menge eingeben:
            Der aktuelle Preis von IRFH5255TR2PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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            Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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