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IXYN100N120C3

IXYN100N120C3
Mfr. #:
IXYN100N120C3
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXYN100N120C3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXYN100N120C3 DatasheetIXYN100N120C3 Datasheet (P4-P6)IXYN100N120C3 Datasheet (P7)
ECAD Model:
Mehr Informationen:
IXYN100N120C3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
SOT-227B-4
Montageart:
SMD/SMT
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
2.9 V
Maximale Gate-Emitter-Spannung:
30 V
Kontinuierlicher Kollektorstrom bei 25 C:
152 A
Pd - Verlustleistung:
830 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
IXYN100N120
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
152 A
Marke:
IXYS
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
10
Unterkategorie:
IGBTs
Handelsname:
XPT
Gewichtseinheit:
1.058219 oz
Tags
IXYN100N1, IXYN10, IXYN1, IXYN, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
GenX3™ XPT™ IGBT 1200 V 152 A Chassis Mount High-Speed IGBT - SOT-227B
***ical
Trans IGBT Module N-CH 1200V 152A 830000mW
***i-Key
IGBT MOD 1200V 152A 830W SOT227B
***trelec
Configuration = Single / Continuous Collector Current (Ic) A = 160 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 3.5 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 830 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = SOT-227B / Pins = 4 / Mounting Type = SMD / Packaging = Tube / Reflow Temperature Max. °C = 260
1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Teil # Mfg. Beschreibung Aktie Preis
IXYN100N120C3H1
DISTI # V99:2348_15876629		IXYS CorporationTrans IGBT Chip N-CH 1.2KV 134A 4-Pin SOT-227B
RoHS: Compliant		10
  • 200:$28.3400
  • 100:$31.2600
  • 50:$32.3900
  • 25:$34.0400
  • 10:$37.1500
  • 5:$38.5900
  • 1:$40.5100
IXYN100N120C3
DISTI # V99:2348_15876625		IXYS CorporationTrans IGBT Chip N-CH 1.2KV 152A 4-Pin SOT-227B
RoHS: Compliant		3
  • 200:$23.3900
  • 100:$25.0400
  • 50:$26.3600
  • 25:$27.1600
  • 10:$29.4500
  • 5:$30.3700
  • 1:$31.9800
IXYN100N120C3H1
DISTI # V36:1790_15876629		IXYS CorporationTrans IGBT Chip N-CH 1.2KV 134A 4-Pin SOT-227B
RoHS: Compliant		0
    IXYN100N120C3H1
    DISTI # IXYN100N120C3H1-ND    		IXYS CorporationIGBT XPT 1200V 134A SOT-227B
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		153In Stock
    • 100:$32.9648
    • 30:$35.1623
    • 10:$38.0190
    • 1:$40.6600
    IXYN100N120C3
    DISTI # IXYN100N120C3-ND    		IXYS CorporationIGBT XPT 1200V 152A SOT-227B
    RoHS: Compliant
    Min Qty: 10
    Container: Tube    		Temporarily Out of Stock
    • 10:$33.5470
    IXYN100N120C3H1
    DISTI # 33629159    		IXYS CorporationTrans IGBT Chip N-CH 1.2KV 134A 4-Pin SOT-227B
    RoHS: Compliant    		10
    • 1:$40.5100
    IXYN100N120C3
    DISTI # 29518522    		IXYS CorporationTrans IGBT Chip N-CH 1.2KV 152A 4-Pin SOT-227B
    RoHS: Compliant    		3
    • 200:$25.1442
    • 100:$26.9180
    • 50:$28.3370
    • 25:$29.1970
    • 10:$31.6588
    • 5:$32.6478
    • 1:$34.3785
    IXYN100N120C3H1
    DISTI # 02AC9854    		IXYS CorporationIGBT, N-CH, 1.2KV, 134A, SOT-227B,Transistor Polarity:N Channel,DC Collector Current:134A,Collector Emitter Saturation Voltage Vce(on):3.5V,Power Dissipation Pd:690W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes5
    • 250:$29.1800
    • 100:$33.2900
    • 50:$33.4000
    • 25:$35.5100
    • 10:$38.3900
    • 5:$39.1100
    • 1:$41.0700
    IXYN100N120C3
    DISTI # 747-IXYN100N120C3    		IXYS CorporationIGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
    RoHS: Compliant    		82
    • 1:$34.5400
    • 5:$32.8100
    • 10:$31.9500
    • 25:$29.3600
    • 50:$28.6500
    • 100:$27.2900
    • 200:$25.0400
    IXYN100N120C3H1
    DISTI # 747-IXYN100N120C3H1    		IXYS CorporationIGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
    RoHS: Compliant    		1075
    • 1:$40.6600
    • 5:$38.7200
    • 10:$38.0100
    • 25:$35.1600
    • 50:$33.0700
    • 100:$32.9600
    • 200:$28.8900
    IXYN100N120C3
    DISTI # 8047600    		IXYS CorporationIGBT N-CH 1200V 86A XPT GENX3 SOT227B, EA23
    • 25:£22.8200
    • 10:£23.6400
    • 5:£24.7400
    • 1:£27.4900
    IXYN100N120C3H1
    DISTI # 8047619    		IXYS CorporationIGBT 1200V 134A XPT GENX3 DIODE SOT227B, EA91
    • 30:£22.8500
    • 10:£23.3200
    • 5:£24.1700
    • 2:£25.2900
    • 1:£28.1000
    IXYN100N120C3H1
    DISTI # 2674801    		IXYS CorporationIGBT, N-CH, 1.2KV, 134A, SOT-227B
    RoHS: Compliant    		5
    • 100:$49.9400
    • 30:$53.2700
    • 10:$57.5900
    • 1:$61.5900
    IXYN100N120C3H1
    DISTI # 2674801    		IXYS CorporationIGBT, N-CH, 1.2KV, 134A, SOT-227B
    RoHS: Compliant    		5
    • 100:£23.3800
    • 50:£26.7600
    • 10:£27.9300
    • 5:£31.3300
    • 1:£32.3000
    Bild Teil # Beschreibung
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    OMO.#: OMO-AD783JQ-ANALOG-DEVICES-INC-ADI

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    OMO.#: OMO-IXDN614PI-IXYS-INTEGRATED-CIRCUITS-DIVIS

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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5500
    Menge eingeben:
    Der aktuelle Preis von IXYN100N120C3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    34,54 $
    34,54 $
    5
    32,81 $
    164,05 $
    10
    31,95 $
    319,50 $
    25
    29,36 $
    734,00 $
    50
    28,65 $
    1 432,50 $
    100
    27,29 $
    2 729,00 $
    200
    25,04 $
    5 008,00 $
    500
    23,83 $
    11 915,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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