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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SQM200JB-68R | YAGEO Corporation | 8000 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: SQM200N04-1m1L_GE3 OMO.#: OMO-SQM200N04-1M1L-GE3 |
MOSFET 40V 200A, 375W AEC-Q101 Qualified |
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Mfr.#: SQM200N04-1M8_GE3 OMO.#: OMO-SQM200N04-1M8-GE3 |
MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified |
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Mfr.#: SQM200JB-8R2 OMO.#: OMO-SQM200JB-8R2 |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-0R39 OMO.#: OMO-SQM200JB-0R39 |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-82K OMO.#: OMO-SQM200JB-82K |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-11K OMO.#: OMO-SQM200JB-11K |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-1K6 OMO.#: OMO-SQM200JB-1K6 |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-91R OMO.#: OMO-SQM200JB-91R |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200N04-1M1L OMO.#: OMO-SQM200N04-1M1L-1190 |
Neu und Original |
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Mfr.#: SQM200N041M1LGE3 OMO.#: OMO-SQM200N041M1LGE3-1190 |
Power Field-Effect Transistor, 200A I(D), 40V, 0.0011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
