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FQT4N25TF

FQT4N25TF
Mfr. #:
FQT4N25TF
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 250V Single
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQT4N25TF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-223-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
250 V
Id - Kontinuierlicher Drainstrom:
830 mA
Rds On - Drain-Source-Widerstand:
1.75 Ohms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
1.8 mm
Länge:
6.5 mm
Serie:
FQT4N25
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
3.5 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
1.28 S
Abfallzeit:
22 ns
Produktart:
MOSFET
Anstiegszeit:
45 ns
Werkspackungsmenge:
4000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
6.4 ns
Typische Einschaltverzögerungszeit:
6.8 ns
Gewichtseinheit:
0.003951 oz
Tags
FQT4N25, FQT4, FQT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power MOSFET, N-Channel, QFET®, 250 V, 0.83 A, 1.75 Ω, SOT-223
*** Source Electronics
Trans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 250V 0.83A SOT-223
***ure Electronics
N-Channel 250 V 1.75 Ohm Surface Mount Mosfet - SOT-223
***nell
MOSFET, N-CH, 250V, 0.83A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 830mA; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 1.38ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***(Formerly Allied Electronics)
IRFL210TRPBF N-channel MOSFET Transistor; 0.96 A; 200 V; 3 + Tab-Pin SOT-223
***ure Electronics
Single N-Channel 200 V 1.5 Ohms Surface Mount Power Mosfet - SOT-223
***ical
Trans MOSFET N-CH 200V 0.96A 4-Pin(3+Tab) SOT-223 T/R
*** Stop Electro
Power Field-Effect Transistor, 0.96A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: N Power dissipation: 2 W
***ical
Trans MOSFET N-CH 200V 0.96A 4-Pin(3+Tab) SOT-223
***ment14 APAC
MOSFET, N, 200V, 0.96A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:960mA; Source Voltage Vds:200V; On Resistance
***SIT Distribution GmbH
Small Signal Field-Effect Transistor, 0.96A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***nell
MOSFET, N, 200V, 0.96A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 960mA; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 3.1W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 960mA; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 60°C/W; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 7.7A; SMD Marking: FL210; Termination Type: Surface Mount Device; Voltage Vds: 200V; Voltage Vds Typ: 200V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V
***(Formerly Allied Electronics)
Transistor, P-channel, QFET MOSFET, -250V, -0.55A, 4.0 Ohm, SOT-223 | ON Semiconductor FQT2P25TF
***et
Trans MOSFET P-CH 250V 0.55A 4-Pin(3+Tab) SOT-223 T/R
***emi
P-Channel QFET® MOSFET -250 V, -0.55 A, 4.0 Ω
***ure Electronics
250V 0.55A 4OHM P-Channel SOT-223 Mosfet
***ark
Mosfet, P-Ch, -250V, -0.55A, Sot-223; Transistor Polarity:p Channel; Continuous Drain Current Id:-550Ma; Drain Source Voltage Vds:-250V; On Resistance Rds(On):3.15Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-5V; Power Rohs Compliant: Yes
***rchild Semiconductor
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switching DC/DC converters.
***emi
Power MOSFET, P-Channel, QFET®, -200 V, -0.67 A, 2.7 Ω, SOT-223
***et
Trans MOSFET P-CH 200V 0.67A 4-Pin(3+Tab) SOT-223 T/R
***Yang
Trans MOSFET P-CH 200V 0.67A 4-Pin(3+Tab) SOT-223 T/R - Product that comes on tape, but is not reele
***nell
MOSFET, P-CH, -400V, -0.67A, SOT-223-4; Transistor Polarity: P Channel; Continuous Drain Current Id: -670mA; Drain Source Voltage Vds: -200V; On Resistance Rds(on): 2.06ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage V
***rchild Semiconductor
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***emi
Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 0.85 A, 1.4 Ω, SOT-223
***(Formerly Allied Electronics)
Transistor, N-channel, QFET MOSFET, 200V, 0.85A, 140 Ohm at VGS 10V, SOT-223 | ON Semiconductor FQT4N20LTF
***ure Electronics
N-Channel 200 V 1.35 Ohm 5.2 nC Logic Mosfet - SOT-223
***Yang
Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel
***ment14 APAC
MOSFET, N CH, 200V, 0.85A, SOT-223-3; Transistor Polarity:N Channel; Continuous Drain Current Id:850mA; Source Voltage Vds:200V; On Resistance
***nell
MOSFET, N CH, 200V, 0.85A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 850mA; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 1.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 2.2W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***icroelectronics
N-channel 200 V, 1.1 Ohm typ., 1 A STripFET(TM) II Power MOSFET in SOT-223 package
***ure Electronics
STN4NF20L: 200 V 1 A N-Ch. Low Gate Charge STripFET™ II Power Mosfet - SOT-223
***ical
Trans MOSFET N-CH 200V 1A 4-Pin(3+Tab) SOT-223 T/R
***ment14 APAC
MOSFET, N-CH, 200V, 1A, SOT-223-4; Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Source Voltage Vds:200V; On Resistance
***nell
MOSFET, N-CH, 200V, 1A, SOT-223-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 1.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 3.3W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: StripFET II Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)
Teil # Mfg. Beschreibung Aktie Preis
FQT4N25TF
DISTI # V72:2272_06301314		ON SemiconductorTrans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R190
  • 100:$0.3280
  • 25:$0.4244
  • 10:$0.5187
  • 1:$0.5764
FQT4N25TF
DISTI # V36:1790_06301314		ON SemiconductorTrans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R0
  • 4000000:$0.1747
  • 2000000:$0.1750
  • 400000:$0.1976
  • 40000:$0.2371
  • 4000:$0.2436
FQT4N25TF
DISTI # FQT4N25TFCT-ND		ON SemiconductorMOSFET N-CH 250V 0.83A SOT-223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1800In Stock
  • 1000:$0.2590
  • 500:$0.3238
  • 100:$0.4096
  • 10:$0.5340
  • 1:$0.6100
FQT4N25TF
DISTI # FQT4N25TFDKR-ND		ON SemiconductorMOSFET N-CH 250V 0.83A SOT-223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1800In Stock
  • 1000:$0.2590
  • 500:$0.3238
  • 100:$0.4096
  • 10:$0.5340
  • 1:$0.6100
FQT4N25TF
DISTI # FQT4N25TFTR-ND		ON SemiconductorMOSFET N-CH 250V 0.83A SOT-223
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 28000:$0.2012
  • 12000:$0.2122
  • 8000:$0.2279
  • 4000:$0.2436
FQT4N25TF
DISTI # 33368491		ON SemiconductorTrans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R12000
  • 4000:$0.1578
FQT4N25TF
DISTI # 30616253		ON SemiconductorTrans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R2690
  • 34:$0.7550
FQT4N25TF
DISTI # 25743590		ON SemiconductorTrans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R190
  • 37:$0.5764
FQT4N25TF
DISTI # FQT4N25TF		ON SemiconductorTrans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FQT4N25TF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 40000:$0.1607
  • 24000:$0.1648
  • 16000:$0.1669
  • 8000:$0.1691
  • 4000:$0.1702
FQT4N25TF
DISTI # FQT4N25TF		ON SemiconductorTrans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R - Bulk (Alt: FQT4N25TF)
RoHS: Compliant
Min Qty: 1316
Container: Bulk		Americas - 0
  • 13160:$0.2339
  • 6580:$0.2399
  • 3948:$0.2429
  • 2632:$0.2459
  • 1316:$0.2479
FQT4N25TF
DISTI # FQT4N25TF		ON SemiconductorTrans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R (Alt: FQT4N25TF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 0
  • 40000:€0.1609
  • 24000:€0.1739
  • 16000:€0.1879
  • 8000:€0.2049
  • 4000:€0.2509
FQT4N25TF
DISTI # 82C4374		ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,830MA I(D),SOT-223 ROHS COMPLIANT: YES0
  • 30000:$0.1940
  • 18000:$0.2020
  • 12000:$0.2170
  • 6000:$0.2320
  • 3000:$0.2520
  • 1:$0.2580
FQT4N25TF
DISTI # 31Y1564		ON SemiconductorMOSFET, N-CH, 250V, 0.83A, SOT-223-3,Transistor Polarity:N Channel,Continuous Drain Current Id:830mA,Drain Source Voltage Vds:250V,On Resistance Rds(on):1.38ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V RoHS Compliant: Yes2121
  • 1000:$0.2580
  • 500:$0.2830
  • 250:$0.3080
  • 100:$0.3330
  • 50:$0.4040
  • 25:$0.4750
  • 10:$0.5460
  • 1:$0.6670
FQT4N25TF.
DISTI # 27AC5849		Fairchild Semiconductor CorporationQF 250V 1.75OHM SOT223 ROHS COMPLIANT: YES0
  • 40000:$0.1660
  • 24000:$0.1700
  • 16000:$0.1720
  • 8000:$0.1750
  • 1:$0.1760
FQT4N25TF
DISTI # 512-FQT4N25TF		ON SemiconductorMOSFET 250V Single
RoHS: Compliant		16180
  • 1:$0.6600
  • 10:$0.5410
  • 100:$0.3300
  • 1000:$0.2550
  • 4000:$0.2180
  • 8000:$0.2030
  • 24000:$0.1920
FQT4N25TFFairchild Semiconductor CorporationPower Field-Effect Transistor, 0.83A I(D), 250V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		70118
  • 1000:$0.2200
  • 500:$0.2400
  • 100:$0.2500
  • 25:$0.2600
  • 1:$0.2800
FQT4N25TFFairchild Semiconductor Corporation 32
    FQT4N25TF
    DISTI # 8075939P    		ON SemiconductorMOSFETFAIRCHILDFQT4N25TF, RL2040
    • 2000:£0.1710
    • 1000:£0.1860
    • 200:£0.2170
    • 100:£0.2470
    FQT4N25TF
    DISTI # 2453914    		ON SemiconductorMOSFET, N-CH, 250V, 0.83A, SOT-223-32986
    • 500:£0.1970
    • 250:£0.2260
    • 100:£0.2550
    • 10:£0.4620
    • 1:£0.5820
    FQT4N25TF
    DISTI # 2453914RL    		ON SemiconductorMOSFET, N-CH, 250V, 0.83A, SOT-223-3
    RoHS: Compliant    		0
    • 24000:$0.2950
    • 8000:$0.3130
    • 4000:$0.3360
    • 1000:$0.3920
    • 100:$0.5070
    • 10:$0.8320
    • 1:$1.0200
    FQT4N25TF
    DISTI # 2453914    		ON SemiconductorMOSFET, N-CH, 250V, 0.83A, SOT-223-3
    RoHS: Compliant    		2116
    • 24000:$0.2950
    • 8000:$0.3130
    • 4000:$0.3360
    • 1000:$0.3920
    • 100:$0.5070
    • 10:$0.8320
    • 1:$1.0200
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    Verfügbarkeit
    Aktie:
    16
    Auf Bestellung:
    1999
    Menge eingeben:
    Der aktuelle Preis von FQT4N25TF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,66 $
    0,66 $
    10
    0,54 $
    5,41 $
    100
    0,33 $
    33,00 $
    1000
    0,26 $
    255,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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