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IPI041N12N3GAKSA1

IPI041N12N3GAKSA1
Mfr. #:
IPI041N12N3GAKSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPI041N12N3GAKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-262-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
120 V
Id - Kontinuierlicher Drainstrom:
120 A
Rds On - Drain-Source-Widerstand:
3.2 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
211 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
300 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Rohr
Höhe:
9.45 mm
Länge:
10.2 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
4.5 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
83 S
Abfallzeit:
21 ns
Produktart:
MOSFET
Anstiegszeit:
52 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
70 ns
Typische Einschaltverzögerungszeit:
35 ns
Teil # Aliase:
G IPI041N12N3 IPI41N12N3GXK SP000652748
Gewichtseinheit:
0.084199 oz
Tags
IPI041N12N3G, IPI041, IPI04, IPI0, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 120 V 4.1 mOhm 158 nC OptiMOS™ Power Mosfet - TO-262-3
***ical
Trans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:120V; Continuous Drain Current Id:120A; On Resistance Rds(On):0.0041Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Msl:- Rohs Compliant: Yes
***ineon SCT
The 120V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications, PG-TO262-3-3, RoHS
***ineon
The 120V OptiMOS family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS technology gives new possibilites for optimized solutions. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers
Teil # Mfg. Beschreibung Aktie Preis
IPI041N12N3GAKSA1
DISTI # V99:2348_06377393		Infineon Technologies AGTrans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		500
  • 1000:$2.5900
  • 500:$2.9859
  • 250:$3.3520
  • 100:$3.5700
  • 10:$4.1620
  • 1:$5.4219
IPI041N12N3GAKSA1
DISTI # V36:1790_06377393		Infineon Technologies AGTrans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		300
  • 5000:$2.2300
  • 2500:$2.3470
  • 1000:$2.4939
  • 500:$2.9859
  • 250:$3.3520
  • 100:$3.5700
  • 10:$4.1620
  • 1:$5.4219
IPI041N12N3GAKSA1
DISTI # IPI041N12N3GAKSA1-ND		Infineon Technologies AGMOSFET N-CH 120V 120A TO262-3
RoHS: Compliant
Min Qty: 500
Container: Tube		Temporarily Out of Stock
  • 500:$3.2774
IPI041N12N3GAKSA1
DISTI # 30182284		Infineon Technologies AGTrans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		500
  • 3:$5.4219
IPI041N12N3GAKSA1
DISTI # 26193810		Infineon Technologies AGTrans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		300
  • 3:$5.4219
IPI041N12N3GAKSA1
DISTI # IPI041N12N3GAKSA1		Infineon Technologies AGTrans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI041N12N3GAKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 5000:$2.2900
  • 3000:$2.3900
  • 2000:$2.4900
  • 1000:$2.5900
  • 500:$2.6900
IPI041N12N3GAKSA1
DISTI # IPI041N12N3GAKSA1		Infineon Technologies AGTrans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 - Bulk (Alt: IPI041N12N3GAKSA1)
RoHS: Compliant
Min Qty: 149
Container: Bulk		Americas - 0
    IPI041N12N3GAKSA1
    DISTI # SP000652748    		Infineon Technologies AGTrans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 (Alt: SP000652748)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 500:€2.0900
    • 1000:€2.0900
    • 50:€2.1900
    • 100:€2.1900
    • 25:€2.2900
    • 1:€2.3900
    • 10:€2.3900
    IPI041N12N3GAKSA1.
    DISTI # 32AC0679    		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:120V,On Resistance Rds(on):4.1mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:300W,No. of Pins:3Pins RoHS Compliant: Yes0
    • 3000:$2.3900
    • 5000:$2.3900
    • 2000:$2.4900
    • 1000:$2.5900
    • 1:$2.6900
    IPI041N12N3GAKSA1
    DISTI # 726-IPI041N12N3GAKSA    		Infineon Technologies AGMOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3
    RoHS: Compliant    		400
    • 1:$4.9700
    • 10:$4.2300
    • 100:$3.6600
    • 250:$3.4700
    • 500:$3.1200
    • 1000:$2.6300
    • 2500:$2.5000
    IPI041N12N3 G
    DISTI # 726-IPI041N12N3G    		Infineon Technologies AGMOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3
    RoHS: Compliant    		46
    • 1:$4.9700
    • 10:$4.2300
    • 100:$3.6600
    • 250:$3.4700
    • 500:$3.1200
    • 1000:$2.6300
    • 2500:$2.5000
    Bild Teil # Beschreibung
    IPI041N12N3 G

    Mfr.#: IPI041N12N3 G

    OMO.#: OMO-IPI041N12N3-G

    		 MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3
    IPI041N12N3GAKSA1

    Mfr.#: IPI041N12N3GAKSA1

    OMO.#: OMO-IPI041N12N3GAKSA1

    		 MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3
    IPI041N12N3

    Mfr.#: IPI041N12N3

    OMO.#: OMO-IPI041N12N3-1190

    		 Neu und Original
    IPI041N12N3G

    Mfr.#: IPI041N12N3G

    OMO.#: OMO-IPI041N12N3G-1190

    		 Power Field-Effect Transistor, 120A I(D), 120V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    IPI041N12N3GAKSA1

    Mfr.#: IPI041N12N3GAKSA1

    OMO.#: OMO-IPI041N12N3GAKSA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 120V 120A TO262-3
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4000
    Menge eingeben:
    Der aktuelle Preis von IPI041N12N3GAKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    4,97 $
    4,97 $
    10
    4,23 $
    42,30 $
    100
    3,66 $
    366,00 $
    250
    3,47 $
    867,50 $
    500
    3,12 $
    1 560,00 $
    1000
    2,63 $
    2 630,00 $
    2500
    2,50 $
    6 250,00 $
    5000
    2,40 $
    12 000,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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