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BSC016N06NSTATMA1

BSC016N06NSTATMA1
Mfr. #:
BSC016N06NSTATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET DIFFERENTIATED MOSFETS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC016N06NSTATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BSC016N06NSTATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PG-TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
1.6 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.1 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
71 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
139 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
70 S
Abfallzeit:
9 ns
Produktart:
MOSFET
Anstiegszeit:
9 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
35 ns
Typische Einschaltverzögerungszeit:
19 ns
Teil # Aliase:
BSC016N06NST SP001657074
Tags
BSC016N06, BSC016, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
OptiMOS Power Transistor MOSFET N-Channel 60V 100A 8-Pin TDSON-FL T/R
***ical
Trans MOSFET N-CH 60V 31A Tape
***i-Key
DIFFERENTIATED MOSFETS
***ark
Mosfet, N-Ch, 60V, 100A, 167W, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0014Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 100A, 167W, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:167W; Transistor Case Style:TDSON; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CAN N, 60V, 100A, 167W, TDSON; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0014ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:167W; Modello Case Transistor:TDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Teil # Mfg. Beschreibung Aktie Preis
BSC016N06NSTATMA1
DISTI # V72:2272_19084605		Infineon Technologies AGBSC016N06NST4314
  • 3000:$1.2320
  • 1000:$1.3770
  • 500:$1.5209
  • 250:$1.5930
  • 100:$1.7700
  • 25:$2.0660
  • 10:$2.2950
  • 1:$2.8853
BSC016N06NSTATMA1
DISTI # V36:1790_19084605		Infineon Technologies AGBSC016N06NST0
  • 5000000:$1.0790
  • 2500000:$1.0800
  • 500000:$1.1490
  • 50000:$1.2490
  • 5000:$1.2640
BSC016N06NSTATMA1
DISTI # BSC016N06NSTATMA1CT-ND		Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		14918In Stock
  • 1000:$1.4525
  • 500:$1.7530
  • 100:$2.1336
  • 10:$2.6540
  • 1:$2.9500
BSC016N06NSTATMA1
DISTI # BSC016N06NSTATMA1DKR-ND		Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		14918In Stock
  • 1000:$1.4525
  • 500:$1.7530
  • 100:$2.1336
  • 10:$2.6540
  • 1:$2.9500
BSC016N06NSTATMA1
DISTI # BSC016N06NSTATMA1TR-ND		Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		5000In Stock
  • 5000:$1.2643
BSC016N06NSTATMA1
DISTI # 32689028		Infineon Technologies AGBSC016N06NST5000
  • 5000:$1.1842
BSC016N06NSTATMA1
DISTI # 32445508		Infineon Technologies AGBSC016N06NST4314
  • 6:$2.8853
BSC016N06NSTATMA1
DISTI # BSC016N06NSTATMA1		Infineon Technologies AGOptiMOS Power Transistor MOSFET N-Channel 60V 100A 8-Pin TDSON-FL T/R - Tape and Reel (Alt: BSC016N06NSTATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 30000:$1.0900
  • 50000:$1.0900
  • 10000:$1.1900
  • 20000:$1.1900
  • 5000:$1.2900
BSC016N06NSTATMA1
DISTI # SP001657074		Infineon Technologies AGOptiMOS Power Transistor MOSFET N-Channel 60V 100A 8-Pin TDSON-FL T/R (Alt: SP001657074)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 50000:€1.0489
  • 30000:€1.1239
  • 20000:€1.2108
  • 10000:€1.3119
  • 5000:€1.5739
BSC016N06NSTATMA1
DISTI # 93AC6983		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, 167W, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes2429
  • 1000:$1.3500
  • 500:$1.6400
  • 250:$1.7500
  • 100:$1.8700
  • 50:$2.0200
  • 25:$2.1800
  • 10:$2.3300
  • 1:$2.7500
BSC016N06NSTATMA1
DISTI # 726-BSC016N06NSTATM1		Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant		27859
  • 1:$2.7200
  • 10:$2.3100
  • 100:$1.8500
  • 500:$1.6200
  • 1000:$1.3400
BSC016N06NSTATMA1
DISTI # 2986440		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, 167W, TDSON
RoHS: Compliant		2429
  • 1000:$1.9000
  • 500:$1.9700
  • 250:$2.2100
  • 100:$2.3600
  • 10:$2.8600
  • 1:$3.7300
BSC016N06NSTATMA1
DISTI # 2986440		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, 167W, TDSON5454
  • 500:£1.2400
  • 250:£1.3900
  • 100:£1.4900
  • 10:£1.8100
  • 1:£2.3700
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Verfügbarkeit
Aktie:
27
Auf Bestellung:
2010
Menge eingeben:
Der aktuelle Preis von BSC016N06NSTATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,72 $
2,72 $
10
2,31 $
23,10 $
100
1,85 $
185,00 $
500
1,62 $
810,00 $
1000
1,34 $
1 340,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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