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FQP8N90C

FQP8N90C
Mfr. #:
FQP8N90C
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 900V N-Ch Q-FET advance C-Series
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQP8N90C Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
900 V
Id - Kontinuierlicher Drainstrom:
6 A
Rds On - Drain-Source-Widerstand:
1.9 Ohms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
171 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
QFET
Verpackung:
Rohr
Höhe:
16.3 mm
Länge:
10.67 mm
Serie:
FQP8N90C
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
4.7 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
5.5 S
Abfallzeit:
70 ns
Produktart:
MOSFET
Anstiegszeit:
110 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
70 ns
Typische Einschaltverzögerungszeit:
40 ns
Teil # Aliase:
FQP8N90C_NL
Gewichtseinheit:
0.063493 oz
Tags
FQP8N9, FQP8N, FQP8, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 6.3 A, 1.9 Ω, TO-220
***ark
Transistor,mosfet,n-Channel,900V V(Br)Dss,6.3A I(D),to-220 Rohs Compliant: Yes
***et Europe
Trans MOSFET N-CH 900V 6.3A 3-Pin(3+Tab) TO-220AB Rail
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
FQP8N90C
DISTI # V36:1790_06359311		ON Semiconductor900V N-CHANNEL ADVANCE Q-FET C508
  • 10000:$1.0584
  • 5000:$1.1163
  • 2500:$1.1657
  • 1000:$1.2729
  • 500:$1.5446
  • 100:$1.7821
  • 10:$2.2364
  • 1:$2.9131
FQP8N90C
DISTI # FQP8N90C-ND		ON SemiconductorMOSFET N-CH 900V 6.3A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$1.3527
FQP8N90C
DISTI # 25661034		ON Semiconductor900V N-CHANNEL ADVANCE Q-FET C508
  • 7:$2.9131
FQP8N90C
DISTI # FQP8N90C		ON SemiconductorTrans MOSFET N-CH 900V 6.3A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FQP8N90C)
RoHS: Compliant
Min Qty: 250
Container: Bulk		Americas - 0
  • 500:$1.1900
  • 750:$1.1900
  • 1250:$1.1900
  • 2500:$1.1900
  • 250:$1.2900
FQP8N90C
DISTI # FQP8N90C		ON SemiconductorTrans MOSFET N-CH 900V 6.3A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP8N90C)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$1.0900
  • 2000:$1.0900
  • 4000:$1.0900
  • 6000:$1.0900
  • 10000:$1.0900
FQP8N90C
DISTI # FQP8N90C		ON SemiconductorTrans MOSFET N-CH 900V 6.3A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP8N90C)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.9779
  • 500:€1.0149
  • 100:€1.0539
  • 50:€1.0959
  • 25:€1.1419
  • 10:€1.2449
  • 1:€1.3699
FQP8N90C
DISTI # 84H4784		ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,6.3A I(D),TO-220 ROHS COMPLIANT: YES0
  • 10000:$1.2500
  • 2500:$1.3100
  • 1000:$1.4100
  • 500:$1.6900
  • 100:$1.9200
  • 10:$2.3600
  • 1:$2.9100
FQP8N90C
DISTI # 512-FQP8N90C		ON SemiconductorMOSFET 900V N-Ch Q-FET advance C-Series
RoHS: Compliant		657
  • 1:$2.6800
  • 10:$2.2800
  • 100:$1.8300
  • 500:$1.6000
  • 1000:$1.3300
  • 2500:$1.2300
  • 5000:$1.1900
FQP8N90CFairchild Semiconductor CorporationPower Field-Effect Transistor, 6.3A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		4585
  • 1000:$1.1300
  • 500:$1.1900
  • 100:$1.2400
  • 25:$1.2900
  • 1:$1.3900
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    Verfügbarkeit
    Aktie:
    657
    Auf Bestellung:
    2640
    Menge eingeben:
    Der aktuelle Preis von FQP8N90C dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,61 $
    2,61 $
    10
    2,22 $
    22,20 $
    100
    1,77 $
    177,00 $
    500
    1,55 $
    775,00 $
    1000
    1,28 $
    1 280,00 $
    2000
    1,19 $
    2 380,00 $
    5000
    1,15 $
    5 750,00 $
    10000
    1,11 $
    11 100,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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