FS100R12W2T7B11BOMA1

FS100R12W2T7B11BOMA1
Mfr. #:
FS100R12W2T7B11BOMA1
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Modules
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FS100R12W2T7B11BOMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FS100R12W2T7B11BOMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Module
RoHS:
Y
Produkt:
IGBT Silizium Module
Aufbau:
Sixpack
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
1.5 V
Kontinuierlicher Kollektorstrom bei 25 C:
70 A
Gate-Emitter-Leckstrom:
100 nA
Paket / Koffer:
AG-EASY2B-2
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 175 C
Verpackung:
Tablett
Marke:
Infineon-Technologien
Montageart:
Schraubbefestigung
Maximale Gate-Emitter-Spannung:
20 V
Produktart:
IGBT-Module
Werkspackungsmenge:
15
Unterkategorie:
IGBTs
Tags
FS100R12, FS100R1, FS100R, FS100, FS10, FS1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
FS100R12W2T7_B11 EasyPIM™ 2B IGBT Module
FS100R12W2T7_B11 EasyPIM™ 2B IGBT Module is a 1200V, 100A three-phase input rectifier PIM (Power Integrated Module) Insulated Gate Bipolar Transistor Module with TRENCHSTOP™ IGBT7, an Emitter Controlled Diode, and PressFIT Contact Technology. The compact EasyPIM IGBT Modules are without base plates, instead featuring a fast, reliable, and low-cost screw clamp mount. 
Teil # Mfg. Beschreibung Aktie Preis
FS100R12W2T7B11BOMA1
DISTI # V99:2348_22937586
Infineon Technologies AGFS100R12W2T7B11BOMA10
  • 15000:$58.5500
  • 7500:$58.5600
  • 1500:$59.0800
  • 150:$60.1200
  • 15:$60.3000
FS100R12W2T7B11BOMA1
DISTI # FS100R12W2T7B11BOMA1-ND
Infineon Technologies AGLOW POWER EASY
RoHS: Compliant
Min Qty: 1
Container: Tray
1In Stock
  • 30:$69.2047
  • 15:$71.0753
  • 1:$74.8200
FS100R12W2T7B11BOMA1
DISTI # SP001656864
Infineon Technologies AGIGBT Module 2B 1200 V, 100 A sixpack with TRENCHSTOP IGBT7 (Alt: SP001656864)
RoHS: Compliant
Min Qty: 1
Container: Package
Europe - 30
  • 1000:€56.2900
  • 500:€57.5900
  • 100:€59.2900
  • 50:€61.2900
  • 25:€63.3900
  • 10:€69.7900
  • 1:€86.3900
FS100R12W2T7B11BOMA1
DISTI # FS100R12W2T7B11BOMA1
Infineon Technologies AGIGBT Module 2B 1200 V, 100 A sixpack with TRENCHSTOP IGBT7 - Trays (Alt: FS100R12W2T7B11BOMA1)
RoHS: Compliant
Min Qty: 15
Container: Tray
Americas - 0
  • 150:$56.2900
  • 75:$57.6900
  • 45:$59.0900
  • 30:$60.6900
  • 15:$61.4900
FS100R12W2T7B11BOMA1
DISTI # 94AC1382
Infineon Technologies AGIGBT MODULE, 1.2KV,Transistor Polarity:-,DC Collector Current:-,Collector Emitter Saturation Voltage Vce(on):-,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:Module,No. of Pins:-,RoHS Compliant: Yes22
  • 100:$53.8700
  • 50:$57.3000
  • 25:$58.1500
  • 10:$59.0300
  • 5:$60.7800
  • 1:$62.4500
FS100R12W2T7B11BOMA1
DISTI # 726-FS100R12W2T7B11B
Infineon Technologies AGIGBT Modules
RoHS: Compliant
13
  • 1:$74.8100
  • 5:$73.4400
  • 10:$71.5400
  • 25:$70.1300
  • 100:$64.9900
FS100R12W2T7B11BOMA1
DISTI # 2986959
Infineon Technologies AGIGBT MODULE, 1.2KV24
  • 50:£52.1400
  • 10:£53.2000
  • 5:£54.6000
  • 1:£56.0000
FS100R12W2T7B11BOMA1
DISTI # 2986959
Infineon Technologies AGIGBT MODULE, 1.2KV
RoHS: Compliant
22
  • 10:$95.5100
  • 50:$95.5100
  • 5:$98.3200
  • 1:$100.3800
FS100R12W2T7B11BOMA1
DISTI # XSKDRABV0050511
Infineon Technologies AG 
RoHS: Compliant
24 in Stock0 on Order
  • 24:$83.6400
  • 8:$89.6100
Bild Teil # Beschreibung
IRGP4650DPBF

Mfr.#: IRGP4650DPBF

OMO.#: OMO-IRGP4650DPBF

IGBT Transistors 600V UltraFast IGBT 50A 268W 104nC
IRG7PH35UD-EP

Mfr.#: IRG7PH35UD-EP

OMO.#: OMO-IRG7PH35UD-EP

IGBT Transistors IGBT DISCRETES
DRV8353RSRGZT

Mfr.#: DRV8353RSRGZT

OMO.#: OMO-DRV8353RSRGZT-TEXAS-INSTRUMENTS

100-V Three-Phase Smart Gate Driver With Buck Regulator and Three Current Shunt Amplifiers
MP6532GR-P

Mfr.#: MP6532GR-P

OMO.#: OMO-MP6532GR-P-1177

Motor / Motion / Ignition Controllers & Drivers
IRGP4650DPBF

Mfr.#: IRGP4650DPBF

OMO.#: OMO-IRGP4650DPBF-INFINEON-TECHNOLOGIES

IGBT Transistors 600V UltraFast IGBT 50A 268W 104nC
IRG7PH35UD-EP

Mfr.#: IRG7PH35UD-EP

OMO.#: OMO-IRG7PH35UD-EP-INFINEON-TECHNOLOGIES

IGBT 1200V 50A COPAK247
Verfügbarkeit
Aktie:
12
Auf Bestellung:
1995
Menge eingeben:
Der aktuelle Preis von FS100R12W2T7B11BOMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
74,81 $
74,81 $
5
73,44 $
367,20 $
10
71,54 $
715,40 $
25
70,13 $
1 753,25 $
100
64,99 $
6 499,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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