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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| FMI08N80E DISTI # FE0000000000975 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 28A I(D),500V,0.19ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| FMI08N80ESC DISTI # FE0000000004516 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: FMI03N60E OMO.#: OMO-FMI03N60E-1190 |
Power Field-Effect Transistor, 3A I(D),600V,2.3ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMI05N50E OMO.#: OMO-FMI05N50E-1190 |
Power Field-Effect Transistor, 5A I(D),500V,1.5ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMI05N60E OMO.#: OMO-FMI05N60E-1190 |
Power Field-Effect Transistor, 5.5A I(D),600V,1.3ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMI06034R7KT OMO.#: OMO-FMI06034R7KT-1190 |
Neu und Original |
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Mfr.#: FMI07N50E OMO.#: OMO-FMI07N50E-1190 |
Power Field-Effect Transistor, 6.5A I(D),500V,0.85ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMI08N80E OMO.#: OMO-FMI08N80E-1190 |
Power Field-Effect Transistor, 28A I(D),500V,0.19ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |