OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

SI7212DN-T1-GE3

SI7212DN-T1-GE3
Mfr. #:
SI7212DN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds 12V Vgs PowerPAK 1212-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI7212DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI7212DN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-1212-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
6.8 A
Rds On - Drain-Source-Widerstand:
36 mOhms
Vgs th - Gate-Source-Schwellenspannung:
600 mV
Vgs - Gate-Source-Spannung:
12 V
Qg - Gate-Ladung:
11 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.6 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.04 mm
Länge:
3.3 mm
Serie:
SI7
Transistortyp:
2 N-Channel
Breite:
3.3 mm
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
20 S
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
12 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
30 ns
Typische Einschaltverzögerungszeit:
10 ns
Teil # Aliase:
SI7212DN-GE3
Tags
SI7212D, SI7212, SI721, Si72, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***v
    A***v
    RU

    The stabilitrons came for a month is good if you consider that from some sellers i expect 2,5-3 months. Tape long count did not believe. Thank you to the seller.

    2019-05-17
    V***s
    V***s
    CL

    Even though the shipping time was too long, the item arrived in perfect conditions.

    2019-06-04
***et
Transistor MOSFET Array Dual N-CH 30V 4.9A 8-Pin PowerPAK 1212 T/R
*** Europe
N-CH DUAL 30V PPAK 1212-8
***
30V N-CHANNEL DUAL
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.9A; On Resistance Rds(On):0.03Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V Rohs Compliant: No
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Teil # Mfg. Beschreibung Aktie Preis
SI7212DN-T1-GE3
DISTI # SI7212DN-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 30V 4.9A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6220In Stock
  • 1000:$0.6326
  • 500:$0.8012
  • 100:$1.0332
  • 10:$1.3070
  • 1:$1.4800
SI7212DN-T1-GE3
DISTI # SI7212DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 30V 4.9A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6220In Stock
  • 1000:$0.6326
  • 500:$0.8012
  • 100:$1.0332
  • 10:$1.3070
  • 1:$1.4800
SI7212DN-T1-GE3
DISTI # SI7212DN-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 30V 4.9A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 3000:$0.5732
SI7212DN-T1-GE3
DISTI # SI7212DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 4.9A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7212DN-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.6059
  • 6000:$0.5879
  • 12000:$0.5639
  • 18000:$0.5489
  • 30000:$0.5339
SI7212DN-T1-GE3
DISTI # 18X0020		Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 30V, 4.9A, POWERPAK,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.03ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:600mVRoHS Compliant: Yes0
  • 1:$1.6300
  • 10:$1.3500
  • 25:$1.2500
  • 50:$1.1400
  • 100:$1.0400
  • 500:$1.0200
  • 1000:$1.0100
SI7212DN-T1-GE3.
DISTI # 30AC0188		Vishay IntertechnologiesContinuous Drain Current Id:4.9A,Drain Source Voltage Vds:30V,Automotive Qualification Standard:- RoHS Compliant: No0
  • 1:$1.0900
  • 3000:$1.0800
  • 6000:$1.0600
  • 12000:$1.0500
  • 18000:$1.0400
  • 30000:$1.0200
SI7212DN-T1-GE3
DISTI # 781-SI7212DN-GE3		Vishay IntertechnologiesMOSFET 30V Vds 12V Vgs PowerPAK 1212-8
RoHS: Compliant		3455
  • 1:$1.6300
  • 10:$1.3500
  • 100:$1.0300
  • 500:$0.8850
  • 1000:$0.7770
  • 3000:$0.7760
SI7212DN-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 12V Vgs PowerPAK 1212-8Americas -
    Bild Teil # Beschreibung
    DA14585-00000VV2

    Mfr.#: DA14585-00000VV2

    OMO.#: OMO-DA14585-00000VV2

    		 RF System on a Chip - SoC BT5.0 WL-CSP34 SoC
    CY15B104Q-LHXI

    Mfr.#: CY15B104Q-LHXI

    OMO.#: OMO-CY15B104Q-LHXI

    		 F-RAM F-RAM Memory Serial
    STTH30R04G-TR

    Mfr.#: STTH30R04G-TR

    OMO.#: OMO-STTH30R04G-TR

    		 Rectifiers Recovery Diode Ultra Fast
    FDMS7692

    Mfr.#: FDMS7692

    OMO.#: OMO-FDMS7692

    		 MOSFET PT7 30/20V Nch PowerTrench
    STBC03JR

    Mfr.#: STBC03JR

    OMO.#: OMO-STBC03JR

    		 Battery Management Li-Ion linear battery charger with LDO and load switches
    DST2080S

    Mfr.#: DST2080S

    OMO.#: OMO-DST2080S

    		 Schottky Diodes & Rectifiers 80V 20A
    PWR263S-35-20R0F

    Mfr.#: PWR263S-35-20R0F

    OMO.#: OMO-PWR263S-35-20R0F

    		 Thick Film Resistors - SMD 20Ohms 1% 250V
    PWR263S-35-20R0F

    Mfr.#: PWR263S-35-20R0F

    OMO.#: OMO-PWR263S-35-20R0F-BOURNS

    		 Thick Film Resistors - SMD 20Ohms 1% 250V
    STBC03JR

    Mfr.#: STBC03JR

    OMO.#: OMO-STBC03JR-STMICROELECTRONICS

    		 IC BATT CHG LI-ION 30-FLIP CHIP
    STEF01FTR

    Mfr.#: STEF01FTR

    OMO.#: OMO-STEF01FTR-STMICROELECTRONICS

    		 IC ELECTRONIC FUSE
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4000
    Menge eingeben:
    Der aktuelle Preis von SI7212DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,62 $
    1,62 $
    10
    1,34 $
    13,40 $
    100
    1,02 $
    102,00 $
    500
    0,88 $
    442,00 $
    1000
    0,70 $
    698,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
    Beginnen mit
    Neueste Produkte
    More Newest Products
    Top