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CSD19537Q3T

CSD19537Q3T
Mfr. #:
CSD19537Q3T
Beschreibung:
MOSFET 100V, N ch NexFET MOSFETG , single SON3x3, 14.5mOhm 8-VSON-CLIP -55 to 150
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CSD19537Q3T Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
CSD19537Q3T Mehr Informationen CSD19537Q3T Product Details
Produkteigenschaft
Attributwert
Hersteller:
Texas Instruments
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
VSON-CLIP-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
53 A
Rds On - Drain-Source-Widerstand:
14.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.6 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
16 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
83 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
NexFET
Verpackung:
Spule
Höhe:
1 mm
Länge:
3.3 mm
Serie:
CSD19537Q3
Transistortyp:
1 N-Channel
Breite:
3.3 mm
Marke:
Texas Instruments
Vorwärtstranskonduktanz - Min:
45 S
Abfallzeit:
3 ns
Produktart:
MOSFET
Anstiegszeit:
3 ns
Werkspackungsmenge:
250
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
10 ns
Typische Einschaltverzögerungszeit:
5 ns
Gewichtseinheit:
0.000847 oz
Tags
CSD1953, CSD19, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
100V, N ch NexFET MOSFET™, single SON3x3, 14.5mOhm 8-VSON-CLIP -55 to 150
***Components
In a Pack of 5, Texas Instruments CSD19537Q3T MOSFET
***ical
Trans MOSFET N-CH Si 100V 50A 8-Pin VSON-CLIP EP T/R
***et Europe
Trans MOSFET N-CH 100V 50A 8-Pin VSON-CLIP T/R
***i-Key
MOSFET N-CH 100V 50A 8VSON
***ark
Mosfet, N-Ch, 100V, 50A, Vson-8; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0121Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 50A, VSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0121ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:83W; Transistor Case Style:VSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
***nell
MOSFET, N-CH, 100V, 50A, VSON-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:50A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0121ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:83W; Modello Case Transistor:VSON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
***AS INSTRUMENTS INCORPORATED
This 100-V, 12.1-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
CSD19537Q3 N-Channel NexFET™ Power MOSFETs
OMO Electronic CSD19537Q3 N-Channel NexFET™ Power MOSFETs are a 100V 12.1mΩ N-Channel NexFET™ power MOSFET that is designed to minimize losses in power conversion applications. This MOSFET features an ultra-low Qg and Qgd with low thermal resistance. It is also avalanche rated and comes in Pb-Free, halogen free RoHS complant SON-8 3.3mmx3.3mm plastic package. Typical applications include primary side isolated converters and motor control.Learn More
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Verfügbarkeit
Aktie:
15
Auf Bestellung:
1998
Menge eingeben:
Der aktuelle Preis von CSD19537Q3T dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,36 $
1,36 $
10
1,16 $
11,60 $
100
0,89 $
89,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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