FQP34N20

Mfr. #:: FQP34N20
Hersteller:: ON Semiconductor / Fairchild
Beschreibung:: MOSFET 200V N-Channel QFET
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: FQP34N20 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
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ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: ON Semiconductor

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: Durchgangsloch

Paket / Koffer:: TO-220-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 200 V

Id - Kontinuierlicher Drainstrom:: 31 A

Rds On - Drain-Source-Widerstand:: 75 mOhms

Vgs - Gate-Source-Spannung:: 30 V

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 180 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: QFET

Verpackung:: Rohr

Höhe:: 16.3 mm

Länge:: 10.67 mm

Serie:: FQP34N20

Transistortyp:: 1 N-Channel

Typ:: MOSFET

Breite:: 4.7 mm

Marke:: ON Semiconductor / Fairchild

Vorwärtstranskonduktanz - Min:: 25 S

Abfallzeit:: 115 ns

Produktart:: MOSFET

Anstiegszeit:: 280 ns

Werkspackungsmenge:: 1000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 125 ns

Typische Einschaltverzögerungszeit:: 40 ns

Gewichtseinheit:: 0.063493 oz

Tags: FQP34, FQP3, FQP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FQP34N20 Beschreibung

***emi: Power MOSFET, N-Channel, QFET®, 200 V, 31 A, 75 mΩ, TO-220

***ure Electronics: Single N-Channel 200 V 0.075 Ohm 78 nC 180 W DMOS Flange Mount Mosfet - TO-220-3

***et: Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Rail

***r Electronics: Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET,N CH,200V,31A,TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:200V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:180W; Operating Temperature Range:-55°C to +105°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:31A; Power Dissipation Pd:180W; Voltage Vgs Max:30V

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***emi: N-Channel Power MOSFET, UniFETTM, 200V, 39A, 66mΩ, TO-220F

***ure Electronics: FDPF39N20 Series 200 V 39 A 66 mOhm N-Ch UniFet Mosfet - TO-220-3FP

***Yang: Trans MOSFET N-CH 200V 39A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***enic: 200V 39A 37W 66m´Î@10V19.5A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

***r Electronics: Power Field-Effect Transistor, 39A I(D), 200V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:200V; On Resistance Rds(on):66mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:37W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:39A; Package / Case:TO-220F; Power Dissipation Pd:37W; Pulse Current Idm:156A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.082Ohm;ID 31A;TO-220AB;PD 200W;VGS +/-30V

***ure Electronics: Single N-Channel 200 V 0.082 Ohm 107 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop: Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 200V, 31A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:200V; On Resistance Rds(on):82mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:31A; Junction to Case Thermal Resistance A:0.75°C/W; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:124A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

***ure Electronics: Single N-Channel 150 V 56 mOhm 60 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 33A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: N CH MOSFET, 150V, 33A, TO-220AB; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:150V; On Resistance Rds(on):56mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:33A; Junction to Case Thermal Resistance A:0.9°C/W; On State resistance @ Vgs = 10V:56ohm; Package / Case:TO-220AB; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:130A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

***emi: N-Channel Power MOSFET, UniFETTM, 250 V, 33 A, 94 mΩ, TO-220

***Yang: Trans MOSFET N-CH 250V 33A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***ure Electronics: N-Channel 250 V 94 mOhm Flange Mount Mosfet - TO-220

*** Stop Electro: Power Field-Effect Transistor, 33A I(D), 250V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:33A; On Resistance, Rds(on):0.094ohm; Rds(on) Test Voltage, Vgs:5V; Threshold Voltage, Vgs Typ:30V ;RoHS Compliant: Yes

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:250V; On Resistance Rds(on):94mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:235W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Capacitance Ciss Typ:1640pF; Current Id Max:33A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:0.53°C/W; On State Resistance Max:94mohm; On State Resistance Typ:77mohm; Package / Case:TO-220; Pin Configuration:G(1),D(2)S(3); Power Dissipation Pd:235W; Power Dissipation Pd:235W; Pulse Current Idm:132A; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

*** Source Electronics: Trans MOSFET N-CH Si 200V 25A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 200V 25A TO-220AB

***ineon SCT: 200V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***ure Electronics: Single N-Channel 200 V 72.5 mOhm 25 nC HEXFET® Power Mosfet - TO-220-3

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Class D Audio; Consumer Full-Bridge; Full-Bridge; Push-Pull

***ment14 APAC: MOSFET, CLASS D, 200V, TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:200V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:25A; Package / Case:TO-220AB; Power Dissipation Pd:144W; Power Dissipation Pd:144W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

***ure Electronics: Single N-Channel 150 V 0.146 Ohm 34 nC 135 W Flange Mount Mosfet - TO-220-3

***Yang: Trans MOSFET N-CH 150V 4A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube

***emi: N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ

***ter Electronics: TO-220AB, SINGLE, N-CH, 150V, 57MOHM ULTRAFET TRENCH MOSFET

***r Electronics: Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N CH 29A 150V, TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:150V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:29A; Package / Case:TO-220; Power Dissipation Pd:135W; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
FQP34N20 DISTI # 26637338	ON Semiconductor	SQ	1000	2000:$1.1000 1000:$1.2283
FQP34N20 DISTI # 9767400	ON Semiconductor	SQ	500	10000:$0.8601 6000:$0.8812 4000:$0.8927 2000:$0.9042 1000:$0.9109
FQP34N20 DISTI # FQP34N20-ND	ON Semiconductor	MOSFET N-CH 200V 31A TO-220 RoHS: Compliant Min Qty: 1 Container: Tube	870In Stock	1000:$1.3317 500:$1.6072 100:$2.0664 10:$2.5710 1:$2.8500
FQP34N20L DISTI # FQP34N20L-ND	ON Semiconductor	MOSFET N-CH 200V 31A TO-220 RoHS: Compliant Min Qty: 1000 Container: Tube	Limited Supply - Call
FQP34N20 DISTI # FQP34N20	ON Semiconductor	Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP34N20) RoHS: Compliant Min Qty: 1	Europe - 0	1:€1.5779 10:€1.2909 25:€1.1029 50:€1.0019 100:€0.9859 500:€0.9709 1000:€0.9559
FQP34N20 DISTI # FQP34N20	ON Semiconductor	Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP34N20) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$0.9069 1002:$0.9039 2002:$0.9009 5000:$0.8989 10000:$0.8959
FQP34N20 DISTI # 87X8793	ON Semiconductor	MOSFET Transistor, N Channel, 31 A, 200 V, 0.06 ohm, 10 V, 5 V RoHS Compliant: Yes	530	1:$2.1500 10:$1.8500 100:$1.4900 500:$1.3200 1000:$1.1000
FQP34N20. DISTI # 81AC8734	ON Semiconductor	QF 200V 75MOHM TO220	0	1:$0.9490 2000:$0.9420 4000:$0.9300 6000:$0.9180 10000:$0.8960
FQP34N20 DISTI # 512-FQP34N20	ON Semiconductor	MOSFET 200V N-Channel QFET RoHS: Compliant	433	1:$1.9900 10:$1.7000 100:$1.3600
FQP34N20L DISTI # 512-FQP34N20L	ON Semiconductor	MOSFET 200V N-Ch QFET Logic Level RoHS: Compliant	0
FQP34N20	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	13000	1000:$1.2500 500:$1.3200 100:$1.3700 25:$1.4300 1:$1.5400
FQP34N20 DISTI # 6715092	ON Semiconductor	MOSFET N-CHANNEL 200V 31A TO220AB, PK	805	5:£1.6880 25:£1.4100 100:£1.1100 250:£1.0720 500:£0.8040
FQP34N20 DISTI # 6715092P	ON Semiconductor	MOSFET N-CHANNEL 200V 31A TO220AB, TU	225	25:£1.4100 100:£1.1100 250:£1.0720 500:£0.8040
FQP34N20	Fairchild Semiconductor Corporation		1400
FQP34N20	ON Semiconductor	Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	Europe - 650
FQP34N20 DISTI # 1839004	ON Semiconductor	MOSFET,N CH,200V,31A,TO-220 RoHS: Compliant	541	1:£1.7300 10:£1.3500 100:£1.0500 250:£0.9840 500:£0.9170
FQP34N20 DISTI # 1839004	ON Semiconductor	MOSFET,N CH,200V,31A,TO-220 RoHS: Compliant	625	1:$3.1500 10:$2.6900 100:$2.1600 500:$1.8800 1000:$1.5700

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Verfügbarkeit

Aktie:: 918
Auf Bestellung:: 2901
Menge eingeben:

Der aktuelle Preis von FQP34N20 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

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FQP34N20

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes