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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SQM200JB-68R | YAGEO Corporation | 8000 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: SQM200N04-1m7L_GE3 OMO.#: OMO-SQM200N04-1M7L-GE3-82F |
MOSFET 40V 200A 375 AEC-Q101 Qualified |
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Mfr.#: SQM200JB-11R OMO.#: OMO-SQM200JB-11R |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-36K OMO.#: OMO-SQM200JB-36K |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-56K OMO.#: OMO-SQM200JB-56K |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-91R OMO.#: OMO-SQM200JB-91R |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-10K OMO.#: OMO-SQM200JB-10K |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-18R OMO.#: OMO-SQM200JB-18R |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200N04-1M7L_GE3 |
MOSFET N-CH 40V 200A TO-263 |
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Mfr.#: SQM200JB-0R39 OMO.#: OMO-SQM200JB-0R39-YAGEO |
RES WW 2W 5% TH |
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Mfr.#: SQM200N041M1LGE3 OMO.#: OMO-SQM200N041M1LGE3-1190 |
Power Field-Effect Transistor, 200A I(D), 40V, 0.0011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
