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SIHG17N60D-GE3

SIHG17N60D-GE3
Mfr. #:
SIHG17N60D-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 600V Vds 30V Vgs TO-247AC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHG17N60D-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHG17N60D-GE3 DatasheetSIHG17N60D-GE3 Datasheet (P4-P6)SIHG17N60D-GE3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SIHG17N60D-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247AC-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
17 A
Rds On - Drain-Source-Widerstand:
340 mOhms
Vgs th - Gate-Source-Schwellenspannung:
5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
45 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
277.8 W
Aufbau:
Single
Verpackung:
Schüttgut
Serie:
D
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Teil # Aliase:
SIHG17N60D-E3
Gewichtseinheit:
1.340411 oz
Tags
SIHG17, SIHG1, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-247AC
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N-CH, 600V, 17A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.275ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:277.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
D-Series High Voltage Power MOSFETs
Vishay Siliconix's D-Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V and 600V ratings. These new devices combines low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65 Ω-nC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
Teil # Mfg. Beschreibung Aktie Preis
SIHG17N60D-GE3
DISTI # 27549478		Vishay IntertechnologiesTrans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-247AC
RoHS: Compliant		85
  • 31:$2.5385
SIHG17N60D-GE3
DISTI # SIHG17N60D-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 17A TO247AC
RoHS: Compliant
Min Qty: 500
Container: Tube		Temporarily Out of Stock
  • 500:$2.4665
SIHG17N60D-GE3
DISTI # SIHG17N60D-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 17A 3-Pin TO-247AC (Alt: SIHG17N60D-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€1.3900
  • 50:€1.4900
  • 100:€1.4900
  • 500:€1.4900
  • 25:€1.6900
  • 10:€2.0900
  • 1:€2.5900
SIHG17N60D-GE3
DISTI # SIHG17N60D-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 17A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG17N60D-GE3)
RoHS: Not Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 3000:$1.7900
  • 5000:$1.7900
  • 1000:$1.8900
  • 2000:$1.8900
  • 500:$1.9900
SIHG17N60D-GE3
DISTI # 62W0514		Vishay IntertechnologiesPower MOSFET, N Channel, 17 A, 600 V, 0.275 ohm, 10 V, 3 V RoHS Compliant: Yes85
  • 1:$1.6500
  • 10:$1.6500
  • 25:$1.6500
  • 50:$1.6500
  • 100:$1.6500
  • 500:$1.6500
  • 1000:$1.6500
  • 2500:$1.6500
SIHG17N60D-GE3
DISTI # 78-SIHG17N60D-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant		277
  • 1:$3.9700
  • 10:$3.2900
  • 100:$2.7100
  • 250:$2.6200
  • 500:$2.3500
  • 1000:$1.9900
  • 2500:$1.8900
SIHG17N60DGE3Vishay IntertechnologiesPower Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
RoHS: Compliant		500
    SIHG17N60D-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
    RoHS: Compliant    		Americas -
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      Verfügbarkeit
      Aktie:
      277
      Auf Bestellung:
      2260
      Menge eingeben:
      Der aktuelle Preis von SIHG17N60D-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      3,97 $
      3,97 $
      10
      3,29 $
      32,90 $
      100
      2,71 $
      271,00 $
      250
      2,62 $
      655,00 $
      500
      2,35 $
      1 175,00 $
      1000
      1,99 $
      1 990,00 $
      2500
      1,89 $
      4 725,00 $
      5000
      1,82 $
      9 100,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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