GS8162Z18DD-333V

GS8162Z18DD-333V
Mfr. #:
GS8162Z18DD-333V
Hersteller:
GSI Technology
Beschreibung:
SRAM 1.8/2.5V 1M x 18 18M
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
GS8162Z18DD-333V Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
GS8162Z18DD-333V Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
GSI-Technologie
Produktkategorie:
SRAM
RoHS:
N
Speichergröße:
18 Mbit
Organisation:
1 M x 18
Zugriffszeit:
5 ns
Maximale Taktfrequenz:
333 MHz
Oberflächentyp:
Parallel
Versorgungsspannung - Max.:
2.7 V
Versorgungsspannung - Min.:
1.7 V
Versorgungsstrom - Max.:
220 mA, 280 mA
Minimale Betriebstemperatur:
0 C
Maximale Betriebstemperatur:
+ 70 C
Montageart:
SMD/SMT
Paket / Koffer:
BGA-165
Verpackung:
Tablett
Speichertyp:
SDR
Serie:
GS8162Z18DD
Typ:
NBT PL/FT
Marke:
GSI-Technologie
Feuchtigkeitsempfindlich:
ja
Produktart:
SRAM
Werkspackungsmenge:
18
Unterkategorie:
Speicher & Datenspeicherung
Handelsname:
NBT-SRAM
Tags
GS8162Z18DD-33, GS8162Z18DD-3, GS8162Z18DD, GS8162Z18D, GS8162Z1, GS8162Z, GS8162, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Dual 1.8V/2.5V 18M-Bit 1M x 18 5ns/3ns 165-Pin FBGA
NBT SRAMs
GSI Technology NBT SRAMs are 144Mbit and 288Mbit Synchronous Static SRAMs that allow utilization of all available bus bandwidth. The SRAMs achieve this by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. The devices' simplified interface is designed to use a data bus's maximum bandwidth. Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. 
Bild Teil # Beschreibung
GS8162Z18DGD-200

Mfr.#: GS8162Z18DGD-200

OMO.#: OMO-GS8162Z18DGD-200

SRAM 2.5 or 3.3V 1M x 18 18M
GS8162Z18DGD-250IV

Mfr.#: GS8162Z18DGD-250IV

OMO.#: OMO-GS8162Z18DGD-250IV

SRAM 1.8/2.5V 1M x 18 18M
GS8162Z18DGD-250V

Mfr.#: GS8162Z18DGD-250V

OMO.#: OMO-GS8162Z18DGD-250V

SRAM 1.8/2.5V 1M x 18 18M
GS8162Z18DGB-375I

Mfr.#: GS8162Z18DGB-375I

OMO.#: OMO-GS8162Z18DGB-375I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8162Z18DGB-333

Mfr.#: GS8162Z18DGB-333

OMO.#: OMO-GS8162Z18DGB-333

SRAM 2.5 or 3.3V 1M x 18 18M
GS8162Z18DGD-200V

Mfr.#: GS8162Z18DGD-200V

OMO.#: OMO-GS8162Z18DGD-200V

SRAM 1.8/2.5V 1M x 18 18M
GS8162Z18DB-400I

Mfr.#: GS8162Z18DB-400I

OMO.#: OMO-GS8162Z18DB-400I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8162Z18DB-250V

Mfr.#: GS8162Z18DB-250V

OMO.#: OMO-GS8162Z18DB-250V

SRAM 1.8/2.5V 1M x 18 18M
GS8162Z18DB-250

Mfr.#: GS8162Z18DB-250

OMO.#: OMO-GS8162Z18DB-250

SRAM 2.5 or 3.3V 1M x 18 18M
GS8162Z18DD-333V

Mfr.#: GS8162Z18DD-333V

OMO.#: OMO-GS8162Z18DD-333V

SRAM 1.8/2.5V 1M x 18 18M
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von GS8162Z18DD-333V dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
27,62 $
27,62 $
25
25,64 $
641,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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