TGF2080

TGF2080
Mfr. #:
TGF2080
Hersteller:
Qorvo
Beschreibung:
RF JFET Transistors DC-20GHz NF 1.1dB Gain 11.5dB PAE 56%
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
TGF2080 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
TGF2080 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
TriQuint (Qorvo)
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
TGF
Verpackung
Tablett
Teil-Aliasnamen
1098414
Montageart
SMD/SMT
Betriebstemperaturbereich
- 65 C to + 150 C
Paket-Koffer
0.41 mm x 0.34 mm x 0.1 mm
Technologie
GaAs
Aufbau
Dual
Transistor-Typ
pHEMT
Gewinnen
11.5 dB
Pd-Verlustleistung
4.2 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 65 C
Arbeitsfrequenz
12 GHz
ID-Dauer-Drain-Strom
259 mA
Vds-Drain-Source-Breakdown-Voltage
12 V
Vorwärts-Transkonduktanz-Min
309 mS
Vgs-Gate-Source-Breakdown-Voltage
- 7 V
Maximum-Drain-Gate-Spannung
- 12 V
P1dB-Kompressionspunkt
29.5 dBm
Tags
TGF20, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TGF2080 Discrete GaAs pHEMT
Qorvo TGF2080 is a discrete 800-Micron pHEMT which operates from DC to 20 GHz. TGF2080 is designed using Qorvo’s proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. TGF2080 typically provides 29.5 dBm of output power at P1dB with gain of 11.5 dB and 56% power-added efficiency at 1 dB compression. This performance makes the TGF2080 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.Learn More
Triquint GaAs pHEMt Low Noise Amplifiers
TriQuint offers a wide variety of discrete transistor components using TriQuint's state-of-the-art ultra-low-noise 0.13µm pHEMT and 0.25µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NFmin as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.Learn More
Teil # Mfg. Beschreibung Aktie Preis
TGF2080
DISTI # 772-TGF2080
QorvoRF JFET Transistors DC-20GHz NF 1.1dB Gain 11.5dB PAE 56%
RoHS: Compliant
0
  • 100:$9.7400
  • 300:$9.1000
  • 500:$8.5100
  • 1000:$7.9500
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THERMAL GAP FILLER, 200X200X1MM, PURPLE
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von TGF2080 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
11,92 $
11,92 $
10
11,33 $
113,29 $
100
10,73 $
1 073,25 $
500
10,14 $
5 068,15 $
1000
9,54 $
9 540,00 $
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