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IRFB7546PBF

IRFB7546PBF
Mfr. #:
IRFB7546PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MOSFET N CH 60V 75A TO-220AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFB7546PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IRFB7546PBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
75 A
Rds On - Drain-Source-Widerstand:
6 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.7 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
58 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
99 W
Aufbau:
Single
Handelsname:
StarkIRFET
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
150 S
Abfallzeit:
34 ns
Produktart:
MOSFET
Anstiegszeit:
51 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
32 ns
Typische Einschaltverzögerungszeit:
11 ns
Teil # Aliase:
SP001560262
Gewichtseinheit:
0.211644 oz
Tags
IRFB754, IRFB75, IRFB7, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 60 V 7.3 mOhm 87 nC HEXFET® Power Mosfet - TO-220-3
***ark
TUBE / MOSFET, 60V, 75A, 7.3 mOhm, 58nC, TO-220
***Yang
Trans MOSFET N-CH 60V 75A 3-Pin TO-220AB Tube - Rail/Tube
***et
MOSFET, 60V, 75A, 7.3 MOHM, 58 NC QG, TO-220AB
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 99 W
***ment14 APAC
MOSFET, N CH, 60V, 75A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Source Voltage Vds:60V; On Resistance
***roFlash
Power Field-Effect Transistor, 75A I(D), 60V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.1Milliohms;ID 79A;TO-220AB;PD 110W;-55deg
***ure Electronics
Single N-Channel 60 V 8.4 mOhm 46 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 60V 79A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 110 W
*** Stop Electro
Power Field-Effect Transistor, 79A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:79A; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:79A; Package / Case:TO-220; Power Dissipation Pd:110W; Pulse Current Idm:315A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.34 Milliohms;ID 80A;TO-220AB;PD 140W;-55de
***ure Electronics
Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - TO-220-3
***klin Elektronik
INFINEON THT MOSFET NFET 75V 80A 9mΩ 175°C TO-220 IRFB3607PBF
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 140 W
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
***ment14 APAC
MOSFET, N, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.34mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220AB; Power Dissipation Pd:140W; Pulse Current Idm:310A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 84A;TO-220AB;PD 200W;gFS 69S
***ure Electronics
Single N-Channel 60 V 12 mOhm 130 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 60V 84A 3-Pin(3+Tab) TO-220AB - Rail/Tube
*** Stop Electro
Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:84A; On Resistance, Rds(on):12mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 84 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 12 / Gate-Source Voltage V = 20 / Fall Time ns = 53 / Rise Time ns = 78 / Turn-OFF Delay Time ns = 48 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 200
***ment14 APAC
MOSFET, N, 60V, 81A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:81A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:84A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.9°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:12mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:330A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***eco
Transistor RFP70N06 N-Channel MOSFET 60 Volt 70 Amp TO-220AB
***ure Electronics
N-Channel 60 V 0.014 Ohm Flange Mount Power Mosfet - TO-220AB
***emi
N-Channel Power MOSFET 60V, 70A, 14mΩ
***r Electronics
Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA78440.
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:60V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Current Temperature:25°C; Device Marking:RFP70N06; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:14mohm; Package / Case:TO-220AB; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***ure Electronics
N-Channel 55 V 0.012 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB
***hard Electronics
Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220; UltraFET®
***emi
N-Channel UltraFET Power MOSFET 55V, 75A, 12mΩ
***Yang
Trans MOSFET N-CH 55V 75A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***enic
55V 75A 12m´Î@10V75A 200W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 75A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:12mohm; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.Formerly developmental type TA75339.
***ical
Trans MOSFET N-CH 55V 66A 3-Pin (3+Tab) TO-220AB Rail
***ponent Stockers USA
66 A 55 V 0.016 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***ment14 APAC
MOSFET, N TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:55V; On Resistance Rds(on):10mohm; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:66A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:16mohm; Package / Case:TO-220AB; Power Dissipation Pd:111W; Power Dissipation Pd:111W; Voltage Vgs th Max:3V
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Infineon Automatic Opening Systems
Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths and other functions.Learn More
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
Teil # Mfg. Beschreibung Aktie Preis
IRFB7546PBF
DISTI # V99:2348_13890774		Infineon Technologies AGTrans MOSFET N-CH 60V 75A 3-Pin(3+Tab) TO-220AB Tube1006
  • 10000:$0.3481
  • 2000:$0.3867
  • 1000:$0.4316
  • 500:$0.5269
  • 100:$0.5864
  • 10:$0.7211
  • 1:$0.8172
IRFB7546PBF
DISTI # IRFB7546PBF-ND		Infineon Technologies AGMOSFET N-CH 60V 75A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		5966In Stock
  • 1000:$0.5934
  • 500:$0.7353
  • 100:$0.9304
  • 10:$1.1610
  • 1:$1.3000
IRFB7546PBF
DISTI # 26198190		Infineon Technologies AGTrans MOSFET N-CH 60V 75A 3-Pin(3+Tab) TO-220AB Tube1006
  • 1000:$0.4467
  • 500:$0.5403
  • 100:$0.5961
  • 18:$0.7265
IRFB7546PBF
DISTI # IRFB7546PBF		Infineon Technologies AGTrans MOSFET N-CH 60V 75A 3-Pin TO-220AB Tube - Rail/Tube (Alt: IRFB7546PBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.3709
  • 2000:$0.3579
  • 4000:$0.3449
  • 6000:$0.3329
  • 10000:$0.3269
IRFB7546PBF
DISTI # IRFB7546PBF		Infineon Technologies AGTrans MOSFET N-CH 60V 75A 3-Pin TO-220AB Tube (Alt: IRFB7546PBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Asia - 0
    IRFB7546PBF
    DISTI # SP001560262    		Infineon Technologies AGTrans MOSFET N-CH 60V 75A 3-Pin TO-220AB Tube (Alt: SP001560262)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1:€0.5419
    • 10:€0.4819
    • 25:€0.4339
    • 50:€0.3939
    • 100:€0.3609
    • 500:€0.3329
    • 1000:€0.3099
    IRFB7546PBF
    DISTI # 43X7205    		Infineon Technologies AGMOSFET, N CHANNEL, 60V, 75A, TO-220AB-3,Transistor Polarity:N Channel,Continuous Drain Current Id:75A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.7V,MSL:- RoHS Compliant: Yes200
    • 1:$1.1700
    • 10:$1.0100
    • 100:$0.7940
    • 500:$0.7110
    • 1000:$0.5780
    • 2500:$0.5220
    • 10000:$0.5050
    IRFB7546PBF
    DISTI # 70411811    		Infineon Technologies AGIRFB7546PBF N-channel MOSFET Transistor,75 A,60 V,3-Pin TO-220AB
    RoHS: Compliant    		0
    • 250:$0.9800
    • 500:$0.8500
    • 1000:$0.7700
    • 2000:$0.5400
    • 4000:$0.4700
    IRFB7546PBF
    DISTI # 942-IRFB7546PBF    		Infineon Technologies AGMOSFET MOSFET N CH 60V 75A TO-220AB
    RoHS: Compliant    		1242
    • 1:$1.0600
    • 10:$0.9030
    • 100:$0.6940
    • 500:$0.6130
    • 1000:$0.4840
    IRFB7546PBF
    DISTI # 8208851    		Infineon Technologies AGMOSFET 60V 75A STRONGIRFET TO220AB, PK1260
    • 10:£0.6990
    • 100:£0.5020
    • 250:£0.4730
    • 500:£0.4440
    • 1100:£0.3570
    IRFB7546PBF
    DISTI # IRFB7546PBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,75A,99W,TO220AB58
    • 1:$0.6900
    • 3:$0.6400
    • 10:$0.5400
    • 100:$0.4700
    IRFB7546PBF
    DISTI # TMOSP12150    		Infineon Technologies AGN-CH 60V 53A 7,3mOhm TO220-3
    RoHS: Compliant    		Stock DE - 8000Stock US - 0
    • 50:$0.5562
    • 150:$0.5244
    • 300:$0.4926
    • 750:$0.4449
    • 1000:$0.4290
    IRFB7546PBF
    DISTI # IRFB7546PBF    		Infineon Technologies AGN-Ch 60V 75A 99W 0,0073R TO220AB
    RoHS: Compliant    		210
    • 10:€0.7325
    • 50:€0.4325
    • 200:€0.3325
    • 500:€0.3200
    IRFB7546PBF
    DISTI # C1S322000489233    		Infineon Technologies AGMOSFETs
    RoHS: Compliant    		1006
    • 1000:$0.4467
    • 500:$0.5403
    • 100:$0.5961
    • 10:$0.7265
    IRFB7546PBF
    DISTI # C1S327401067147    		Infineon Technologies AGTrans MOSFET N-CH 60V 75A 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant    		2050
    • 100:$0.5500
    • 50:$0.6300
    • 10:$0.9370
    • 5:$1.1500
    IRFB7546PBF
    DISTI # 2406519    		Infineon Technologies AGMOSFET, N CH, 60V, 75A, TO-220AB-3
    RoHS: Compliant    		1402
    • 1:$1.6800
    • 10:$1.4300
    • 100:$1.1100
    • 500:$0.9710
    • 1000:$0.7660
    • 2000:$0.6800
    • 10000:$0.6650
    IRFB7546PBF
    DISTI # 2406519    		Infineon Technologies AGMOSFET, N CH, 60V, 75A, TO-220AB-3
    RoHS: Compliant    		1410
    • 5:£0.7130
    • 25:£0.6980
    • 100:£0.5120
    • 250:£0.4820
    • 500:£0.4530
    Bild Teil # Beschreibung
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    OMO.#: OMO-SB130-E3-54

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    Mfr.#: 2N3904

    OMO.#: OMO-2N3904

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    Mfr.#: TL084IN

    OMO.#: OMO-TL084IN

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    Mfr.#: PC722A

    OMO.#: OMO-PC722A

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    Mfr.#: TL084IN

    OMO.#: OMO-TL084IN-TEXAS-INSTRUMENTS

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    Mfr.#: 22-28-4067

    OMO.#: OMO-22-28-4067-MOLEX

    		 Headers & Wire Housings KK 100 Hdr Assy Bkwy Bkwy 06 Ckt 30 SGold
    PC722A

    Mfr.#: PC722A

    OMO.#: OMO-PC722A-SWITCHCRAFT-CONXALL

    		 DC Power Connectors 2.1MM POWER JACK
    MCP3008-I/P

    Mfr.#: MCP3008-I/P

    OMO.#: OMO-MCP3008-I-P-MICROCHIP-TECHNOLOGY

    		 Analog to Digital Converters - ADC 10-bit SPI 8 Chl IND TEMP, PDIP16
    MBA02040C3002FRP00

    Mfr.#: MBA02040C3002FRP00

    OMO.#: OMO-MBA02040C3002FRP00-VISHAY

    		 Thin Film Resistors - Through Hole .4watt 30Kohms 1% 1/8watt body size
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1984
    Menge eingeben:
    Der aktuelle Preis von IRFB7546PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,98 $
    0,98 $
    10
    0,84 $
    8,39 $
    100
    0,64 $
    64,50 $
    500
    0,57 $
    285,00 $
    1000
    0,45 $
    449,00 $
    2000
    0,43 $
    858,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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