FJPF5027RTU

FJPF5027RTU
Mfr. #:
FJPF5027RTU
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
Bipolar Transistors - BJT NPN 11 00V/3A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FJPF5027RTU Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
E
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220F-3
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
800 V
Kollektor- Basisspannung VCBO:
1.1 kV
Emitter- Basisspannung VEBO:
7 V
Kollektor-Emitter-Sättigungsspannung:
2 V
Maximaler DC-Kollektorstrom:
3 A
Bandbreitenprodukt fT gewinnen:
15 MHz
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
FJPF5027
Höhe:
9.19 mm
Länge:
10.16 mm
Verpackung:
Rohr
Breite:
4.7 mm
Marke:
ON Semiconductor / Fairchild
Kontinuierlicher Kollektorstrom:
5 A
DC-Kollektor/Basisverstärkung hfe Min:
15
Pd - Verlustleistung:
40 W
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
1000
Unterkategorie:
Transistoren
Teil # Aliase:
FJPF5027RTU_NL
Gewichtseinheit:
0.080072 oz
Tags
FJPF5027R, FJPF5027, FJPF50, FJPF5, FJPF, FJP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans GP BJT NPN 800V 3A 40000mW 3-Pin(3+Tab) TO-220FP Rail
***r Electronics
Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
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***Yang
Trans GP BJT NPN 800V 3A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
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*** Stop Electro
Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***ow.cn
Trans GP BJT NPN 800V 3A 50000mW 3-Pin(3+Tab) TO-220 Tube
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***ment14 APAC
Transistor, NPN, 800V, 3A, 50W, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:800V; Transition Frequency ft:15MHz; Power
***nell
TRANS, NPN, 800V, 3A, 50W, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 800V; Transition Frequency ft: 15MHz; Power Dissipation Pd: 50W; DC Collector Current: 3A; DC Current Gain hFE: 20hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ical
Trans GP BJT NPN 800V 5A 40000mW 3-Pin(3+Tab) TO-220F Rail
***emi
5.0 A, 800 V ESBC Rated NPN Power Bipolar Junction Transistor
***r Electronics
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***enic
800V 40W 5A 20@200mA5V 15MHz NPN [email protected] -55¡Í~+125¡Í@(Tj) TO-220F Bipolar Transistors - BJT ROHS
***rchild Semiconductor
The FJPF2145 is a low-cost, high-performance power switch designed to provide the best performance whenused in an ESBC™ configuration in applications such as: power supplies, motor drivers, smart grid, or ignitionswitches. The power switch is designed to operate up to 1100 volts and up to 5 amps, while providing exceptionally low on-resistance and very low switching losses. The ESBC™ switch can be driven using off-the-shelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. The ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance. The FJPF2145 provides exceptional reliability and a large operating range due to its square reverse-bias-safe-operating-area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures. The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in a highvoltage TO-220F package.
***et
Bipolar (BJT) Transistor NPN 750V 6A 40W Through Hole TO-220F
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TRANS NPN 750V 6A TO220F-3
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Bipolar (BJT) Transistor NPN 600V 4A 11MHz 75W Through Hole TO-220-3 - Bulk
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Trans GP BJT NPN 600V 4A 3-Pin(3+Tab) TO-220 Rail
***-Wing Technology
POWER BIPOLAR TRANSISTOR, NPN
***i-Key Marketplace
TRANS NPN 600V 4A TO220-3
Teil # Mfg. Beschreibung Aktie Preis
FJPF5027RTU
DISTI # FJPF5027RTU-ND
ON SemiconductorTRANS NPN 800V 3A TO-220F
RoHS: Compliant
Min Qty: 1
Container: Tube
318In Stock
  • 1000:$0.5145
  • 500:$0.6518
  • 100:$0.7890
  • 10:$1.0120
  • 1:$1.1300
FJPF5027RTU
DISTI # FJPF5027RTU
ON SemiconductorTrans GP BJT NPN 800V 3A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FJPF5027RTU)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$0.3889
  • 2000:$0.3869
  • 4000:$0.3819
  • 6000:$0.3769
  • 10000:$0.3679
FJPF5027RTU
DISTI # 512-FJPF5027RTU
ON SemiconductorBipolar Transistors - BJT NPN 11 00V/3A
RoHS: Compliant
1243
  • 1:$1.0800
  • 10:$0.9150
  • 100:$0.7030
  • 500:$0.6210
  • 1000:$0.4910
  • 2000:$0.4350
  • 10000:$0.4190
FJPF5027RTUFairchild Semiconductor CorporationPower Bipolar Transistor
RoHS: Compliant
10875
  • 1000:$0.6200
  • 500:$0.6500
  • 100:$0.6800
  • 25:$0.7100
  • 1:$0.7600
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OMO.#: OMO-GRM033R61A105ME15D-MURATA-ELECTRONICS

Cap Ceramic 1uF 10V X5R 20% Pad SMD 0201 85C T/R
TPD1E0B04DPLT

Mfr.#: TPD1E0B04DPLT

OMO.#: OMO-TPD1E0B04DPLT-TEXAS-INSTRUMENTS

TVS DIODE 3.6V 10.1V 2X2SON
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Mfr.#: CDC3RL02BYFPR

OMO.#: OMO-CDC3RL02BYFPR-TEXAS-INSTRUMENTS

Clock Buffer 1-To-6 Clock Driver ALT 595-CDC391DR
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von FJPF5027RTU dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,24 $
1,24 $
10
1,05 $
10,50 $
100
0,81 $
80,60 $
500
0,71 $
356,50 $
1000
0,56 $
563,00 $
2000
0,50 $
998,00 $
10000
0,48 $
4 800,00 $
25000
0,46 $
11 625,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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