SISH402DN-T1-GE3

SISH402DN-T1-GE3
Mfr. #:
SISH402DN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SISH402DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SISH402DN-T1-GE3 DatasheetSISH402DN-T1-GE3 Datasheet (P4-P6)SISH402DN-T1-GE3 Datasheet (P7)
ECAD Model:
Mehr Informationen:
SISH402DN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-1212-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
35 A
Rds On - Drain-Source-Widerstand:
6 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.15 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
42 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
52 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Serie:
SIS
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
82 S
Abfallzeit:
15 ns
Produktart:
MOSFET
Anstiegszeit:
20 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
25 ns
Typische Einschaltverzögerungszeit:
25 ns
Tags
SISH4, SISH, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SISH402DN-T1-GE3
DISTI # V72:2272_21764876
Vishay IntertechnologiesN-Chanel 30 V (D-S) MOSFET PowerPAK 1212-8SH 300M sh ch , 6 m¿ @ 10Vm¿ @ 7.5V 8 m¿ @ 4.5V2756
  • 75000:$0.3626
  • 30000:$0.3719
  • 15000:$0.3812
  • 6000:$0.3906
  • 3000:$0.3999
  • 1000:$0.4092
  • 500:$0.5031
  • 250:$0.5189
  • 100:$0.5766
  • 50:$0.6314
  • 25:$0.7016
  • 10:$0.8575
  • 1:$1.0443
SISH402DN-T1-GE3
DISTI # SISH402DN-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CHAN 30V POWERPAK 1212-
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
50In Stock
  • 1000:$0.4424
  • 500:$0.5604
  • 100:$0.6783
  • 10:$0.8700
  • 1:$0.9700
SISH402DN-T1-GE3
DISTI # SISH402DN-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CHAN 30V POWERPAK 1212-
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
50In Stock
  • 1000:$0.4424
  • 500:$0.5604
  • 100:$0.6783
  • 10:$0.8700
  • 1:$0.9700
SISH402DN-T1-GE3
DISTI # SISH402DN-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CHAN 30V POWERPAK 1212-
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 15000:$0.3665
  • 6000:$0.3808
  • 3000:$0.4009
SISH402DN-T1-GE3
DISTI # 29476174
Vishay IntertechnologiesN-Chanel 30 V (D-S) MOSFET PowerPAK 1212-8SH 300M sh ch , 6 m¿ @ 10Vm¿ @ 7.5V 8 m¿ @ 4.5V2756
  • 19:$1.0443
SISH402DN-T1-GE3
DISTI # SISH402DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 35A 8-Pin PowerPAK 1212 - Tape and Reel (Alt: SISH402DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel
Americas - 0
  • 60000:$0.3489
  • 30000:$0.3589
  • 18000:$0.3689
  • 12000:$0.3849
  • 6000:$0.3959
SISH402DN-T1-GE3
DISTI # SISH402DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 35A 8-Pin PowerPAK 1212 (Alt: SISH402DN-T1-GE3)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€0.3909
  • 500:€0.3969
  • 100:€0.4039
  • 50:€0.4199
  • 25:€0.4539
  • 10:€0.5279
  • 1:€0.7739
SISH402DN-T1-GE3
DISTI # SISH402DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 35A 8-Pin PowerPAK 1212 (Alt: SISH402DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Asia - 0
    SISH402DN-T1-GE3
    DISTI # 81AC2795
    Vishay IntertechnologiesMOSFET, N-CH, 30V, 35A, 150DEG C, 52W,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0048ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes6035
    • 500:$0.5240
    • 250:$0.5670
    • 100:$0.6090
    • 50:$0.6710
    • 25:$0.7320
    • 10:$0.7940
    • 1:$0.9700
    SISH402DN-T1-GE3
    DISTI # 59AC7450
    Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET0
    • 10000:$0.3470
    • 6000:$0.3550
    • 4000:$0.3690
    • 2000:$0.4090
    • 1000:$0.4500
    • 1:$0.4690
    SISH402DN-T1-GE3
    DISTI # 78-SISH402DN-T1-GE3
    Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8
    RoHS: Compliant
    1014
    • 1:$0.9600
    • 10:$0.7860
    • 100:$0.6030
    • 500:$0.5190
    • 1000:$0.4100
    SISH402DN-T1-GE3
    DISTI # 1783696
    Vishay IntertechnologiesN-CHANEL 30 V (D-S) MOSFET POWERPAK 1212, RL6000
    • 3000:£0.2900
    SISH402DN-T1-GE3
    DISTI # 2932959
    Vishay IntertechnologiesMOSFET, N-CH, 30V, 35A, 150DEG C, 52W
    RoHS: Compliant
    6035
    • 1000:$0.6350
    • 500:$0.6710
    • 250:$0.7910
    • 100:$0.9630
    • 10:$1.2300
    • 1:$1.4900
    SISH402DN-T1-GE3
    DISTI # 2932959
    Vishay IntertechnologiesMOSFET, N-CH, 30V, 35A, 150DEG C, 52W6035
    • 500:£0.3760
    • 250:£0.4070
    • 100:£0.4370
    • 10:£0.6200
    • 1:£0.7950
    Bild Teil # Beschreibung
    NLVVHC1GT08DFT1G

    Mfr.#: NLVVHC1GT08DFT1G

    OMO.#: OMO-NLVVHC1GT08DFT1G

    Logic Gates LOG GATE LEVEL SHIFTER
    NLVSV1T34DFT2G

    Mfr.#: NLVSV1T34DFT2G

    OMO.#: OMO-NLVSV1T34DFT2G

    Translation - Voltage Levels 1 BIT TRANSLATOR
    SN74LVC1G14DPWR

    Mfr.#: SN74LVC1G14DPWR

    OMO.#: OMO-SN74LVC1G14DPWR

    Inverters SinglSchmitt-Trigger Inverter -40 to 85
    SN74AXC1T45DBVR

    Mfr.#: SN74AXC1T45DBVR

    OMO.#: OMO-SN74AXC1T45DBVR

    Bus Transceivers Single-bit dual-supply bus transceiver 6-SOT-23 -40 to 125
    EEE-FK1H100SR

    Mfr.#: EEE-FK1H100SR

    OMO.#: OMO-EEE-FK1H100SR

    Aluminum Electrolytic Capacitors - SMD 50VDC 10uF 20% SMD 4x5.8 AEC-Q200
    CRCW0603200KFKEAC

    Mfr.#: CRCW0603200KFKEAC

    OMO.#: OMO-CRCW0603200KFKEAC

    Thick Film Resistors - SMD 1/10Watt 200Kohms 1% Commercial Use
    NLVSV1T34DFT2G

    Mfr.#: NLVSV1T34DFT2G

    OMO.#: OMO-NLVSV1T34DFT2G-ON-SEMICONDUCTOR

    IC TRNSLTR UNIDIRECTIONAL SC88A
    NLVVHC1GT08DFT1G

    Mfr.#: NLVVHC1GT08DFT1G

    OMO.#: OMO-NLVVHC1GT08DFT1G-ON-SEMICONDUCTOR

    IC GATE AND 1CH 2-INP SC88A
    GRM035R60J475ME15D

    Mfr.#: GRM035R60J475ME15D

    OMO.#: OMO-GRM035R60J475ME15D-MURATA-ELECTRONICS

    Cap Ceramic 4.7uF 6.3V X5R 20% Pad SMD 0201 85C T/R
    EEE-FK1H100SR

    Mfr.#: EEE-FK1H100SR

    OMO.#: OMO-EEE-FK1H100SR-PANASONIC

    SMD AL ELECTROLYTIC, 50VDC, 10UF
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1990
    Menge eingeben:
    Der aktuelle Preis von SISH402DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,96 $
    0,96 $
    10
    0,79 $
    7,86 $
    100
    0,60 $
    60,30 $
    500
    0,52 $
    259,50 $
    1000
    0,41 $
    410,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
    Beginnen mit
    Neueste Produkte
    Top