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SIHG73N60AE-GE3

SIHG73N60AE-GE3
Mfr. #:
SIHG73N60AE-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 600V Vds 30V Vgs TO-247AC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHG73N60AE-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHG73N60AE-GE3 DatasheetSIHG73N60AE-GE3 Datasheet (P4-P6)SIHG73N60AE-GE3 Datasheet (P7)
ECAD Model:
Mehr Informationen:
SIHG73N60AE-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247AC-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
60 A
Rds On - Drain-Source-Widerstand:
35 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
394 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
417 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Serie:
E
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
22 S
Abfallzeit:
114 ns
Produktart:
MOSFET
Anstiegszeit:
96 ns
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
212 ns
Typische Einschaltverzögerungszeit:
43 ns
Tags
SIHG73, SIHG7, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
E Series Power MOSFET N-Channel 600V VDS ±30V VGS 60A ID 3-Pin TO-247AC
***ical
Trans MOSFET N-CH 600V 60A 3-Pin(3+Tab) TO-247AC
***ment14 APAC
MOSFET, N-CH, 600V, 60A, 150DEG C, 417W
***ark
Mosfet, N-Ch, 600V, 60A, 150Deg C, 417W; Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.035Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHG73N60AE-GE3
DISTI # V99:2348_21688036		Vishay IntertechnologiesSIHG73N60AE-GE3500
  • 500:$6.7850
  • 100:$8.0340
  • 25:$9.1370
  • 10:$9.9179
  • 1:$11.4019
SIHG73N60AE-GE3
DISTI # SIHG73N60AE-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 60A TO247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		500In Stock
  • 500:$7.4784
  • 100:$8.5881
  • 25:$9.8908
  • 10:$10.3730
  • 1:$11.4800
SIHG73N60AE-GE3
DISTI # 31921242		Vishay IntertechnologiesSIHG73N60AE-GE3500
  • 500:$6.7850
  • 100:$8.0340
  • 25:$9.1370
  • 10:$9.9179
  • 2:$11.4019
SIHG73N60AE-GE3
DISTI # SIHG73N60AE-GE3		Vishay IntertechnologiesE Series Power MOSFET N-Channel 600V VDS ±30V VGS 60A ID 3-Pin TO-247AC - Tape and Reel (Alt: SIHG73N60AE-GE3)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 5000:$5.7900
  • 3000:$5.9900
  • 2000:$6.1900
  • 1000:$6.3900
  • 500:$6.5900
SIHG73N60AE-GE3
DISTI # 78AC6523		Vishay IntertechnologiesMOSFET, N-CH, 600V, 60A, 150DEG C, 417W,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.035ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes500
  • 500:$7.2000
  • 250:$7.9000
  • 100:$8.6000
  • 50:$9.0500
  • 25:$9.5100
  • 10:$10.4400
  • 1:$11.6000
SIHG73N60AE-GE3
DISTI # 78-SIHG73N60AE-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant		500
  • 1:$11.4800
  • 10:$10.3300
  • 25:$9.4100
  • 100:$8.5000
  • 250:$7.8100
  • 500:$7.1200
  • 1000:$6.2000
SIHG73N60AE-GE3
DISTI # 2932931		Vishay IntertechnologiesMOSFET, N-CH, 600V, 60A, 150DEG C, 417W500
  • 100:£6.1700
  • 50:£6.5000
  • 10:£6.8300
  • 5:£8.3200
  • 1:£8.8400
SIHG73N60AE-GE3
DISTI # 2932931		Vishay IntertechnologiesMOSFET, N-CH, 600V, 60A, 150DEG C, 417W
RoHS: Compliant		500
  • 250:$10.6500
  • 100:$11.2700
  • 50:$11.9600
  • 10:$13.0100
  • 5:$15.0200
  • 1:$17.2300
Bild Teil # Beschreibung
SIHG73N60AEL-GE3

Mfr.#: SIHG73N60AEL-GE3

OMO.#: OMO-SIHG73N60AEL-GE3

 MOSFET 600V Vds 30V Vgs TO-247AC
SIHG73N60AE-GE3

Mfr.#: SIHG73N60AE-GE3

OMO.#: OMO-SIHG73N60AE-GE3

 MOSFET 600V Vds 30V Vgs TO-247AC
SIHG73N60E-GE3

Mfr.#: SIHG73N60E-GE3

OMO.#: OMO-SIHG73N60E-GE3

 MOSFET 600V Vds 30V Vgs TO-247AC
SIHG73N60E-E3

Mfr.#: SIHG73N60E-E3

OMO.#: OMO-SIHG73N60E-E3

 MOSFET 600V Vds 30V Vgs TO-247AC
SIHG73N60E-E3

Mfr.#: SIHG73N60E-E3

OMO.#: OMO-SIHG73N60E-E3-VISHAY

 RF Bipolar Transistors MOSFET 600 Volts 73 Amps 520 Watts
SIHG73N60AEL-GE3

Mfr.#: SIHG73N60AEL-GE3

OMO.#: OMO-SIHG73N60AEL-GE3-VISHAY

 MOSFET N-CHAN 600V TO-247AC
SIHG73N60E

Mfr.#: SIHG73N60E

OMO.#: OMO-SIHG73N60E-1190

 Neu und Original
SIHG73N60E-GE3

Mfr.#: SIHG73N60E-GE3

OMO.#: OMO-SIHG73N60E-GE3-VISHAY

 MOSFET N-CH 600V 73A TO247AC
SIHG73N60E-GE3,SIHG73N60

Mfr.#: SIHG73N60E-GE3,SIHG73N60

OMO.#: OMO-SIHG73N60E-GE3-SIHG73N60-1190

 Neu und Original
SIHG73N60AE-GE3

Mfr.#: SIHG73N60AE-GE3

OMO.#: OMO-SIHG73N60AE-GE3-VISHAY

 MOSFET N-CH 600V 60A TO247AC
Verfügbarkeit
Aktie:
500
Auf Bestellung:
2483
Menge eingeben:
Der aktuelle Preis von SIHG73N60AE-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
11,48 $
11,48 $
10
10,33 $
103,30 $
25
9,41 $
235,25 $
100
8,50 $
850,00 $
250
7,81 $
1 952,50 $
500
7,12 $
3 560,00 $
1000
6,20 $
6 200,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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