OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

IXGT45N120

IXGT45N120
Mfr. #:
IXGT45N120
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors 75 Amps 1200V 3.5 Rds
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXGT45N120 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXGT45N120 Datasheet
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-268-3
Montageart:
SMD/SMT
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1200 V
Maximale Gate-Emitter-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
IXGT45N120
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
75 A
Höhe:
5.1 mm
Länge:
16.05 mm
Breite:
14 mm
Marke:
IXYS
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
30
Unterkategorie:
IGBTs
Gewichtseinheit:
0.158733 oz
Tags
IXGT4, IXGT, IXG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronics
Trans IGBT Chip N-CH 1.2KV 75A 3-Pin(2+Tab) TO-268
***i-Key
IGBT 1200V 75A 300W TO268
***ure Electronics
APT25GR120 Series 1200 V 75 A 521 W Field Stop - Trench Gate IGBT - TO-268-3
***et
Trans IGBT Chip N-CH 1200V 75A 3-Pin D3PAK
*** Stop Electro
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel
***ical
Trans IGBT Chip N-CH 1200V 75A 521000mW 3-Pin(2+Tab) D3PAK
***ure Electronics
APT25GR120Sx Series 1200 V 75 A Surface Mount Ultra Fast NPT IGBT® - D3PAK
*** Stop Electro
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel
***ure Electronics
APT25GR120Sx Series 1200 V 75 A Surface Mount Ultra Fast NPT IGBT® - D3PAK
***i-Key
IGBT 1200V 75A 521W D3PAK
***hardson RFPD
SILICON CARBIDE/SILICON HYBRID MODULES
***ical
Trans IGBT Chip N-CH 1200V 20A 85000mW 3-Pin(2+Tab) D3PAK Tube
***ark
Xpt Igbt Copack, 1200V, 20A, To-268Aa
***nell
IGBT,1200V,20A,TO-268AA; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 85W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-268AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (12-Jan-2017); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 85W; Transistor Type: IGBT
***ark
IGBT Single Transistor, 9 A, 1.8 V, 45 W, 1.2 kV, TO-268AA, 3 RoHS Compliant: Yes
***ment14 APAC
IGBT, SINGLE, 1.2KV, 9A, TO-268AA
***nell
IGBT, SINGLE, 1.2KV, 9A, TO-268AA; DC Collector Current: 9A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 45W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-268AA; No. of Pins: 3Pins; Operating Temperature Max: 125°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (12-Jan-2017)
***ical
Trans IGBT Chip N-CH 600V 78A 540000mW 3-Pin(2+Tab) TO-268
***i-Key
IGBT 600V 75A 540W TO268
***el Nordic
Contact for details
Teil # Mfg. Beschreibung Aktie Preis
IXGT45N120
DISTI # IXGT45N120-ND		IXYS CorporationIGBT 1200V 75A 300W TO268
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$8.1150
IXGT45N120
DISTI # 747-IXGT45N120		IXYS CorporationIGBT Transistors 75 Amps 1200V 3.5 Rds
RoHS: Compliant		0
    Bild Teil # Beschreibung
    IXGT40N120B2D1

    Mfr.#: IXGT40N120B2D1

    OMO.#: OMO-IXGT40N120B2D1

    		 IGBT Transistors 75 Amps 1200V 3.5 V Rds
    IXGT45N120

    Mfr.#: IXGT45N120

    OMO.#: OMO-IXGT45N120

    		 IGBT Transistors 75 Amps 1200V 3.5 Rds
    IXGT40N120A2

    Mfr.#: IXGT40N120A2

    OMO.#: OMO-IXGT40N120A2-1190

    		 Neu und Original
    IXGT40N60C2

    Mfr.#: IXGT40N60C2

    OMO.#: OMO-IXGT40N60C2-IXYS-CORPORATION

    		 IGBT 600V 75A 300W TO268
    IXGT40N60B2

    Mfr.#: IXGT40N60B2

    OMO.#: OMO-IXGT40N60B2-IXYS-CORPORATION

    		 IGBT 600V 75A 300W TO268
    IXGT40N60B2D1

    Mfr.#: IXGT40N60B2D1

    OMO.#: OMO-IXGT40N60B2D1-IXYS-CORPORATION

    		 IGBT 600V 75A 300W TO268
    IXGT40N60C2D1

    Mfr.#: IXGT40N60C2D1

    OMO.#: OMO-IXGT40N60C2D1-IXYS-CORPORATION

    		 IGBT 600V 75A 300W TO268
    IXGT4N250C

    Mfr.#: IXGT4N250C

    OMO.#: OMO-IXGT4N250C-IXYS-CORPORATION

    		 IGBT 2500V 13A 150W TO268
    IXGT40N120B2D1

    Mfr.#: IXGT40N120B2D1

    OMO.#: OMO-IXGT40N120B2D1-IXYS-CORPORATION

    		 IGBT Transistors 75 Amps 1200V 3.5 V Rds
    IXGT45N120

    Mfr.#: IXGT45N120

    OMO.#: OMO-IXGT45N120-IXYS-CORPORATION

    		 IGBT Transistors 75 Amps 1200V 3.5 Rds
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4000
    Menge eingeben:
    Der aktuelle Preis von IXGT45N120 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    30
    8,12 $
    243,60 $
    60
    7,41 $
    444,60 $
    120
    7,32 $
    878,40 $
    270
    6,67 $
    1 800,90 $
    510
    6,14 $
    3 131,40 $
    1020
    5,34 $
    5 446,80 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
    Beginnen mit
    Neueste Produkte
    More Newest Products
    Top