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BSC019N02KSGAUMA1

BSC019N02KSGAUMA1
Mfr. #:
BSC019N02KSGAUMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET LV POWER MOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC019N02KSGAUMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TDSON-8
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.27 mm
Länge:
5.9 mm
Breite:
5.15 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Unterkategorie:
MOSFETs
Teil # Aliase:
BSC019N02KS BSC19N2KSGXT G SP000307376
Tags
BSC019N02KSG, BSC019N02, BSC019, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ow.cn
Trans MOSFET N-CH 20V 30A Automotive 8-Pin TDSON EP T/R
***ment14 APAC
MOSFET, N CH, 100A, 20V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:950mV; Power Dissipation Pd:104W; Transistor Case Style:PG-TDSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:100A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Transistor Type:Power MOSFET; Voltage Vgs Max:12V
***ineon
Infineons innovative products serve the market needs throughout the whole energy supply chain. OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar microinverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: For fast switching converters and synchronous rectification; Qualified according to JEDEC for target applications; Super Logic Level 2.5V rated; Excellent gate charge x R DS(on) product (FOM); Very low on-state resistance R DS(on); Superior thermal resistance; Avalanche rated; Pb-free plating, RoHS compliant | Target Applications: Onboard charger; Mainboard; Notebook; DC-DC; VRD/VRM; LED
***ineon SCT
20V Single N-Channel HEXFET Power MOSFET in a PQFN 5 by 6 package, PG-TDSON-8, RoHS
***ark
TAPE AND REEL // MOSFET, 20V, 80A, 3.0 mOhm, 2.5V drive capable, PQFN5x6
*** Stop Electro
Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ineon SCT
20V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***ure Electronics
Single N-Channel 20 V 0.99 mOhm 155 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***(Formerly Allied Electronics)
MOSFET, 20V, 100A, 1.2 MOHM, 155 NC QG, 2.5V DRIVE CAPABLE, PQFN5X6
***ark
N-CHANNEL MOSFET, 20V, 100A, PQFN-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:12V ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal Resistance to PCB (less than 0.8C/W); Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques | Target Applications: eFuse; HotSwap; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; ORing
***nell
MOSFET, N-CH, 20V, 100A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 750µohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 800mV; Power Dissipation Pd: 156W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***(Formerly Allied Electronics)
MOSFET, 20V, 100A, 1.2 MOHM, 155 NC QG, 2.5V DRIVE CAPABLE, PQFN5X6
***ernational Rectifier
20V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
***ment14 APAC
MOSFET,N CH,DIODE,20V,45A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:20V; On Resistance Rds(on):800µohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:12V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:45A; Power Dissipation Pd:3.6W; Voltage Vgs Max:12V
***icroelectronics
N-channel 20 V, 0.002 Ohm, 28 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 package
***r Electronics
Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
*** Electronics
STMICROELECTRONICS STL120N2VH5 MOSFET Transistor, N Channel, 120 A, 20 V, 0.002 ohm, 4.5 V, 700 mV
***nell
MOSFET, N CH, 20V, 28A, POWERFLAT; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.002ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 700mV; Power Dissipation Pd: 80W; Transistor Case Style: PowerFLAT; No. of Pins: 5Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 120A
***Yang
Transistor MOSFET Array Dual N-CH 25V 60A/100A 8-Pin PQFN T/R - Tape and Reel
***emi
Asymmetric Dual N-Channel PowerTrench® Power Clip MOSFET, 25V
***ark
PT9 N 30/12 & PT9 N 25/12 S in PowerClip 56 - 8LD, PQFN, POWERCLIP DUAL, 5.0X6.0 MM, MULTIPHASE
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficiency.
***peria
PSMN1R7-25YLC - N-channel 25 V 1.9 mΩ logic level MOSFET in LFPAK using NextPower technology
***ical
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R
***el Electronic
IC MTR DRIVER 4.75V-5.25V 32LQFP
Teil # Mfg. Beschreibung Aktie Preis
BSC019N02KSGAUMA1
DISTI # BSC019N02KSGAUMA1TR-ND		Infineon Technologies AGMOSFET N-CH 20V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Limited Supply - Call
  • 5000:$0.9966
BSC019N02KSGXT/SAMPLE
DISTI # BSC019N02KSGAUMA1		Infineon Technologies AGTrans MOSFET N-CH 20V 30A 8-Pin TDSON EP - Tape and Reel (Alt: BSC019N02KSGAUMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$1.0039
  • 10000:$0.9669
  • 20000:$0.9319
  • 30000:$0.9009
  • 50000:$0.8849
BSC019N02KS G
DISTI # 726-BSC019N02KSG		Infineon Technologies AGMOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
RoHS: Compliant		0
  • 1:$2.0600
  • 10:$1.7500
  • 100:$1.4000
  • 500:$1.2200
  • 1000:$1.0200
Bild Teil # Beschreibung
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OMO.#: OMO-BSC019N04NS-G--1190

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von BSC019N02KSGAUMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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