SISS32DN-T1-GE3

SISS32DN-T1-GE3
Mfr. #:
SISS32DN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 80V Vds; 20V Vgs PowerPAK 1212-8S
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SISS32DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SISS32DN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK1212-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
63 A
Rds On - Drain-Source-Widerstand:
7.2 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
42 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
65.7 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Serie:
SIS
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
50 S
Abfallzeit:
6 ns
Produktart:
MOSFET
Anstiegszeit:
6 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
19 ns
Typische Einschaltverzögerungszeit:
12 ns
Tags
SISS3, SISS, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SISS32DN-T1-GE3
DISTI # V72:2272_22759355
Vishay IntertechnologiesN-Channel 80-V (D-S) MOSFET PowerPAK 1212-8S 250M SG 2 mil , 7.2 m @ 10V 7 m @ 7.5Vm @ 4.5V5843
  • 3000:$0.5076
  • 1000:$0.5249
  • 500:$0.6484
  • 250:$0.7579
  • 100:$0.8248
  • 25:$0.9641
  • 10:$1.0712
  • 1:$1.4252
SISS32DN-T1-GE3
DISTI # SISS32DN-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CHAN 80-V POWERPAK 1212
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2784In Stock
  • 1000:$0.6083
  • 500:$0.7706
  • 100:$0.9328
  • 10:$1.1960
  • 1:$1.3400
SISS32DN-T1-GE3
DISTI # SISS32DN-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CHAN 80-V POWERPAK 1212
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2784In Stock
  • 1000:$0.6083
  • 500:$0.7706
  • 100:$0.9328
  • 10:$1.1960
  • 1:$1.3400
SISS32DN-T1-GE3
DISTI # SISS32DN-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CHAN 80-V POWERPAK 1212
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 15000:$0.5040
  • 6000:$0.5237
  • 3000:$0.5513
SISS32DN-T1-GE3
DISTI # 32035270
Vishay IntertechnologiesN-Channel 80-V (D-S) MOSFET PowerPAK 1212-8S 250M SG 2 mil , 7.2 m @ 10V 7 m @ 7.5Vm @ 4.5V5843
  • 3000:$0.5076
  • 1000:$0.5249
  • 500:$0.6484
  • 250:$0.7579
  • 100:$0.8248
  • 25:$0.9641
  • 14:$1.0712
SISS32DN-T1-GE3
DISTI # SISS32DN-T1-GE3
Vishay IntertechnologiesN-CHANNEL 80-V (D-S) MOSFET - Tape and Reel (Alt: SISS32DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel
Americas - 0
  • 60000:$0.4799
  • 30000:$0.4939
  • 18000:$0.5079
  • 12000:$0.5289
  • 6000:$0.5449
SISS32DN-T1-GE3
DISTI # 99AC9591
Vishay IntertechnologiesMOSFET, N-CH, 80V, 63A, 150DEG C, 65.7W,Transistor Polarity:N Channel,Continuous Drain Current Id:63A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.8V,Power RoHS Compliant: Yes50
  • 500:$0.7200
  • 250:$0.7790
  • 100:$0.8370
  • 50:$0.9220
  • 25:$1.0100
  • 10:$1.0900
  • 1:$1.3200
SISS32DN-T1-GE3
DISTI # 81AC3503
Vishay IntertechnologiesN-CHANNEL 80-V (D-S) MOSFET0
  • 10000:$0.4770
  • 6000:$0.4880
  • 4000:$0.5070
  • 2000:$0.5630
  • 1000:$0.6190
  • 1:$0.6450
SISS32DN-T1-GE3
DISTI # 78-SISS32DN-T1-GE3
Vishay IntertechnologiesMOSFET 80V Vds,20V Vgs PowerPAK 1212-8S
RoHS: Compliant
5913
  • 1:$1.3100
  • 10:$1.0800
  • 100:$0.8290
  • 500:$0.7130
  • 1000:$0.5630
  • 3000:$0.5250
  • 6000:$0.4990
  • 9000:$0.4810
SISS32DN-T1-GE3
DISTI # 3019141
Vishay IntertechnologiesMOSFET, N-CH, 80V, 63A, 150DEG C, 65.7W
RoHS: Compliant
50
  • 5000:$0.8710
  • 1000:$0.8780
  • 500:$1.1000
  • 250:$1.1900
  • 100:$1.3000
  • 25:$1.6600
  • 5:$1.8300
SISS32DN-T1-GE3
DISTI # 3019141
Vishay IntertechnologiesMOSFET, N-CH, 80V, 63A, 150DEG C, 65.7W50
  • 500:£0.5170
  • 250:£0.5590
  • 100:£0.6010
  • 10:£0.8360
  • 1:£1.0800
Bild Teil # Beschreibung
dsPIC33FJ64GS606-E/PT

Mfr.#: dsPIC33FJ64GS606-E/PT

OMO.#: OMO-DSPIC33FJ64GS606-E-PT

Digital Signal Processors & Controllers - DSP, DSC 16 Bit MCU/DSP 40MIPS 64KB FLASH
HSP061-2M6

Mfr.#: HSP061-2M6

OMO.#: OMO-HSP061-2M6

TVS Diodes / ESD Suppressors 2-Line ESD Prot 6 GHz 0.6pF 100nA
FDMC007N08LCDC

Mfr.#: FDMC007N08LCDC

OMO.#: OMO-FDMC007N08LCDC

MOSFET FET 80V 64A 6.8 mOhm
FDMC007N08LC

Mfr.#: FDMC007N08LC

OMO.#: OMO-FDMC007N08LC

MOSFET 80V/20V N-Channel PTNG MOSFET
CSD18543Q3A

Mfr.#: CSD18543Q3A

OMO.#: OMO-CSD18543Q3A

MOSFET 60V, N ch NexFET MOSFETG , single SON3x3, 9.9mOhm 8-VSONP -55 to 150
NTTFS5820NLTAG

Mfr.#: NTTFS5820NLTAG

OMO.#: OMO-NTTFS5820NLTAG

MOSFET Single N-CH 60V 11A, 37A
TPS43061RTET

Mfr.#: TPS43061RTET

OMO.#: OMO-TPS43061RTET

Switching Controllers Sync Boost Cntlr w/ Wide Input Vtg
EKSHSNZWZ

Mfr.#: EKSHSNZWZ

OMO.#: OMO-EKSHSNZWZ-TAIYO-YUDEN

EYSHSNZWZ BLUETOOTH 5 EVAL KIT
1051

Mfr.#: 1051

OMO.#: OMO-1051-KEYSTONE-ELECTRONICS

Battery Holders, Clips & Contacts Battery Enclosures THM BATTERY HOLDER CR123A
NTTFS5820NLTAG

Mfr.#: NTTFS5820NLTAG

OMO.#: OMO-NTTFS5820NLTAG-ON-SEMICONDUCTOR

MOSFET N-CH 60V 37A 8DFN
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1988
Menge eingeben:
Der aktuelle Preis von SISS32DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,31 $
1,31 $
10
1,08 $
10,80 $
100
0,83 $
82,90 $
500
0,71 $
356,50 $
1000
0,56 $
563,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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