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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BSC884N03MS G DISTI # BSC884N03MSGTR-ND | Infineon Technologies AG | MOSFET N-CH 34V 17A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSC884N03MS G DISTI # BSC884N03MSGCT-ND | Infineon Technologies AG | MOSFET N-CH 34V 17A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSC884N03MS G DISTI # BSC884N03MSGDKR-ND | Infineon Technologies AG | MOSFET N-CH 34V 17A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSC884N03MS G DISTI # BSC884N03MS G | Infineon Technologies AG | Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP - Bulk (Alt: BSC884N03MS G) Min Qty: 962 Container: Bulk | Americas - 0 |
|
| BSC884N03MS G DISTI # BSC884N03MSG | Infineon Technologies AG | Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP - Bulk (Alt: BSC884N03MSG) RoHS: Not Compliant Min Qty: 962 Container: Bulk | Americas - 0 |
|
| BSC884N03MS G DISTI # 726-BSC884N03MSG | Infineon Technologies AG | MOSFET N-Ch 30V 17A TDSON-8 RoHS: Compliant | 0 | |
| BSC884N03MSG | Infineon Technologies AG | Power Field-Effect Transistor, 17A I(D), 34V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 14949 |
|
| BSC884N03MS G | Infineon Technologies AG | Power Field-Effect Transistor, 17A I(D), 34V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 5000 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: BSC884N03MS OMO.#: OMO-BSC884N03MS-1190 |
Neu und Original |
|
Mfr.#: BSC884N03MS G |
MOSFET N-CH 34V 17A TDSON-8 |
|
|
Mfr.#: BSC884N03MSG OMO.#: OMO-BSC884N03MSG-1190 |
Power Field-Effect Transistor, 17A I(D), 34V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC884N03MSGXT OMO.#: OMO-BSC884N03MSGXT-1190 |
Neu und Original |
