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TK31N60W,S1VF

TK31N60W,S1VF
Mfr. #:
TK31N60W,S1VF
Hersteller:
Toshiba
Beschreibung:
MOSFET DTMOSIV 600V 88mOhm 30.8A 230W 3000pF
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
TK31N60W,S1VF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TK31N60W,S1VF DatasheetTK31N60W,S1VF Datasheet (P4-P6)TK31N60W,S1VF Datasheet (P7-P9)TK31N60W,S1VF Datasheet (P10)
ECAD Model:
Mehr Informationen:
TK31N60W,S1VF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Toshiba
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
30.8 A
Rds On - Drain-Source-Widerstand:
73 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.7 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
86 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
230 W
Aufbau:
Single
Handelsname:
DTMOSIV
Höhe:
20.95 mm
Länge:
15.94 mm
Serie:
TK31N60W
Transistortyp:
1 N-Channel
Breite:
5.02 mm
Marke:
Toshiba
Abfallzeit:
8.5 ns
Produktart:
MOSFET
Anstiegszeit:
32 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
165 ns
Typische Einschaltverzögerungszeit:
70 ns
Gewichtseinheit:
1.340411 oz
Tags
TK31N60W, TK31N, TK31, TK3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
X35 Pb-F Power Mosfet Transistor To-247(Os) Moq=2000 Pd=230W F=1Mhz Rohs Compliant: Yes
***ical
Trans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-247 Tube
***et
DTMOSIV(WITH FAST DIODE)_600V_88MOHM MAX(VGS=10V)_TO-247
Gen-4 Super Junction DTMOS MOSFETs
Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, DTMOSIV which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on) chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.
Teil # Mfg. Beschreibung Aktie Preis
TK31N60W,S1VF
DISTI # 25885835		Toshiba America Electronic ComponentsX35 PB-F POWER MOSFET TRANSIST6
  • 2:$9.2367
TK31N60W,S1VF
DISTI # TK31N60WS1VF-ND		Toshiba America Electronic ComponentsMOSFET N CH 600V 30.8A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		72In Stock
  • 510:$5.2390
  • 120:$6.2530
  • 30:$6.9290
  • 10:$7.6050
  • 1:$8.4500
TK31N60W,S1VF
DISTI # V99:2348_13896270		Toshiba America Electronic ComponentsX35 PB-F POWER MOSFET TRANSIST6
  • 1000:$4.5770
  • 500:$5.7550
  • 100:$6.2390
  • 25:$7.4400
  • 10:$7.5660
  • 1:$9.2367
TK31N60W,S1VF
DISTI # V36:1790_13896270		Toshiba America Electronic ComponentsX35 PB-F POWER MOSFET TRANSIST0
  • 30000:$4.0970
  • 15000:$4.1030
  • 3000:$5.3000
  • 300:$7.9700
  • 30:$8.4500
TK31N60WS1VF
DISTI # TK31N60W,S1VF		Toshiba America Electronic ComponentsTrans MOSFET N 600V 30.8A 3-Pin TO-247 Tube - Rail/Tube (Alt: TK31N60W,S1VF)
RoHS: Compliant
Min Qty: 30
Container: Tube		Americas - 30
  • 300:$4.2900
  • 150:$4.3900
  • 90:$4.6900
  • 60:$4.8900
  • 30:$5.1900
TK31N60W,S1VF(S
DISTI # TK31N60W,S1VF(S		Toshiba America Electronic ComponentsTrans MOSFET N-CH 600V 30.8A 3-Pin TO-247 (Alt: TK31N60W,S1VF(S)
RoHS: Compliant
Min Qty: 30		Asia - 0
    TK31N60W,S1VF(S
    DISTI # TK31N60W,S1VF(S    		Toshiba America Electronic ComponentsTrans MOSFET N-CH 600V 30.8A 3-Pin TO-247 (Alt: TK31N60W,S1VF(S)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1000:€2.1900
    • 500:€2.3900
    • 100:€2.4900
    • 50:€2.5900
    • 25:€2.6900
    • 10:€2.7900
    • 1:€2.9900
    TK31N60W,S1VF
    DISTI # 757-TK31N60WS1VF    		Toshiba America Electronic ComponentsMOSFET DTMOSIV 600V 88mOhm 30.8A 230W 3000pF
    RoHS: Compliant    		59
    • 1:$9.3000
    • 10:$8.4700
    • 25:$7.6300
    • 100:$6.2600
    • 500:$5.7700
    • 1000:$4.5700
    TK31N60W,S1VF(S
    DISTI # 8962335    		Toshiba America Electronic ComponentsMOSFETDTMOS4600V/31ATO247, PK10
    • 100:£1.8450
    • 50:£1.9550
    • 20:£2.0900
    • 10:£2.3900
    • 2:£2.7200
    TK31N60W,S1VFToshiba America Electronic ComponentsMOSFET DTMOSIV 600V 88mOhm 30.8A 230W 3000pF
    RoHS: Compliant    		Americas -
    • 30:$7.5200
    • 60:$6.8640
    • 120:$6.1910
    • 270:$5.6830
    TK31N60WS1VFToshiba America Electronic ComponentsMOSFET 600V 88MOHMVGS=10VTO-247
    RoHS: Compliant    		Americas -
    • 30:$7.5200
    • 60:$6.8640
    • 120:$6.1910
    • 270:$5.6830
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    Verfügbarkeit
    Aktie:
    49
    Auf Bestellung:
    2032
    Menge eingeben:
    Der aktuelle Preis von TK31N60W,S1VF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    9,30 $
    9,30 $
    10
    8,47 $
    84,70 $
    25
    7,63 $
    190,75 $
    100
    6,26 $
    626,00 $
    500
    5,77 $
    2 885,00 $
    1000
    4,57 $
    4 570,00 $
    2500
    4,40 $
    11 000,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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