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SCT3030KLHRC11

SCT3030KLHRC11
Mfr. #:
SCT3030KLHRC11
Hersteller:
Rohm Semiconductor
Beschreibung:
MOSFET 1200V 72A 339W SIC 30mOhm TO-247N
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SCT3030KLHRC11 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SCT3030KLHRC11 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ROHM Halbleiter
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
SiC
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247N-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
1200 V
Id - Kontinuierlicher Drainstrom:
72 A
Rds On - Drain-Source-Widerstand:
30 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.7 V
Vgs - Gate-Source-Spannung:
- 4 V, 22 V
Qg - Gate-Ladung:
131 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
339 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Serie:
SCT3x
Transistortyp:
1 N-Channel
Marke:
ROHM Halbleiter
Vorwärtstranskonduktanz - Min:
10.8 S
Abfallzeit:
29 ns
Produktart:
MOSFET
Anstiegszeit:
42 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
61 ns
Typische Einschaltverzögerungszeit:
24 ns
Tags
SCT3030K, SCT303, SCT30, SCT3, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SCT3x 3rd Generation SiC Trench MOSFETs
ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
AEC-Q101 SiC Power MOSFETs
ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch mode power supplies. The SiC Power MOSFETs can be used to boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles.
Teil # Mfg. Beschreibung Aktie Preis
SCT3030KLHRC11
DISTI # SCT3030KLHRC11-ND		ROHM SemiconductorAUTOMOTIVE GRADE N-CHANNEL SIC P
RoHS: Compliant
Min Qty: 1
Container: Tube		450In Stock
  • 25:$57.3536
  • 10:$59.2650
  • 1:$63.0900
SCT3030KLHRC11
DISTI # 02AH4682		ROHM SemiconductorMOSFET, N-CH, 1.2KV, 72A, 175DEG C, 339W,Transistor Polarity:N Channel,Continuous Drain Current Id:72A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.03ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V,Power RoHS Compliant: Yes0
  • 100:$61.9800
  • 50:$65.9400
  • 25:$66.9200
  • 10:$67.9300
  • 5:$69.9400
  • 1:$71.8700
SCT3030KLHRC11
DISTI # 755-SCT3030KLHRC11		ROHM SemiconductorMOSFET 1200V 72A 339W SIC 30mOhm TO-247N
RoHS: Compliant		880
  • 1:$63.0800
  • 5:$61.6700
  • 10:$59.2600
  • 25:$57.3500
SCT3030KLHRC11
DISTI # TMOS2739		ROHM SemiconductorSiC N-CH 1200V 72A 30mOhm
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 450:$55.1400
SCT3030KLHRC11ROHM SemiconductorMOSFET 1200V 72A 339W SIC 30mOhm TO-247N
RoHS: Compliant		Americas -
    SCT3030KLHRC11
    DISTI # 3052188    		ROHM SemiconductorMOSFET, N-CH, 1.2KV, 72A, 175DEG C, 339W
    RoHS: Compliant    		0
    • 1:$108.7500
    SCT3030KLHRC11
    DISTI # 3052188    		ROHM SemiconductorMOSFET, N-CH, 1.2KV, 72A, 175DEG C, 339W0
    • 50:£49.4400
    • 10:£49.4900
    • 5:£49.5400
    • 1:£49.5900
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    		 QUAD HIGH-SIDE CURRENT SENSOR
    Verfügbarkeit
    Aktie:
    846
    Auf Bestellung:
    2829
    Menge eingeben:
    Der aktuelle Preis von SCT3030KLHRC11 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    63,08 $
    63,08 $
    5
    61,67 $
    308,35 $
    10
    59,26 $
    592,60 $
    25
    57,35 $
    1 433,75 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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