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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| FQU8P10TU DISTI # FQU8P10TUOS-ND | ON Semiconductor | MOSFET P-CH 100V 6.6A IPAK Min Qty: 1 Container: Tube | 4986In Stock |
|
| FQU8P10TU DISTI # FQU8P10TU | ON Semiconductor | Trans MOSFET P-CH 100V 6.6A 3-Pin(3+Tab) IPAK Rail - Bulk (Alt: FQU8P10TU) RoHS: Compliant Min Qty: 1191 Container: Bulk | Americas - 0 |
|
| FQU8P10TU DISTI # FQU8P10TU | ON Semiconductor | Trans MOSFET P-CH 100V 6.6A 3-Pin(3+Tab) IPAK Rail (Alt: FQU8P10TU) RoHS: Compliant Min Qty: 5040 | Asia - 0 |
|
| FQU8P10TU DISTI # FQU8P10TU | ON Semiconductor | Trans MOSFET P-CH 100V 6.6A 3-Pin(3+Tab) IPAK Rail (Alt: FQU8P10TU) Min Qty: 1 | Europe - 0 | |
| FQU8P10TU DISTI # FQU8P10TU | ON Semiconductor | Trans MOSFET P-CH 100V 6.6A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FQU8P10TU) RoHS: Compliant Min Qty: 5040 Container: Tube | Americas - 0 |
|
| FQU8P10TU DISTI # 82C4429 | ON Semiconductor | TRANSISTOR,MOSFET,P-CHANNEL,100V V(BR)DSS,6.6A I(D),TO-251AA ROHS COMPLIANT: YES RoHS: Compliant | 0 |
|
| FQU8P10TU DISTI # 512-FQU8P10TU | ON Semiconductor | MOSFET -100V Single RoHS: Compliant | 3890 |
|
| FQU8P10TU | ON Semiconductor | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS: Compliant | 20160 |
|
| FQU8P10TU | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS: Compliant | 89203 |
|
| FQU8P10TU | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS: Not Compliant | Europe - 1960 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: FQU8P10,FQU8P10TU OMO.#: OMO-FQU8P10-FQU8P10TU-1190 |
Neu und Original |