NDS8958

Mfr. #:: NDS8958
Hersteller:: ON Semiconductor
Beschreibung:: MOSFET N/P-CH 30V 5.3A/4A 8SOIC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: NDS8958 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: Fairchild Semiconductor

Produktkategorie: FETs - Arrays

Serie: -

Verpackung: Digi-ReelR

Paket-Koffer: 8-SOIC (0.154", 3.90mm Width)

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Lieferanten-Geräte-Paket: 8-SO

FET-Typ: N- und P-Kanal

Leistung max: 900mW

Drain-zu-Source-Spannung-Vdss: 30V

Eingangskapazität-Ciss-Vds: 720pF @ 15V

FET-Funktion: Logik-Level-Gate

Strom-Dauer-Drain-Id-25°C: 5.3A, 4A

Rds-On-Max-Id-Vgs: 35 mOhm @ 5.3A, 10V

Vgs-th-Max-Id: 2.8V @ 250μA

Gate-Lade-Qg-Vgs: 30nC @ 10V

Tags: NDS895, NDS89, NDS8, NDS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NDS8958 Beschreibung

***th Star Micro: Transistor MOSFET N/P-CH 30V 5.3A/4A 8-Pin SOIC N T/R

***ment14 APAC: MOSFET, DUAL, NP, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Cont Current Id N Channel 2:5.3A; Cont Current Id P Channel:4A; Continuous Drain Current Id, N Channel:5.3A; Continuous Drain Current Id, P Channel:-4A; Current Id Max:5.3A; Current Temperature:25°C; Drain Source Voltage Vds, N Channel:30V; Drain Source Voltage Vds, P Channel:-30V; Full Power Rating Temperature:25°C; Module Configuration:Dual; No. of Transistors:2; On Resistance Rds(on), N Channel:0.033ohm; On Resistance Rds(on), P Channel:0.052ohm; On State Resistance Channel 1:50mohm; On State Resistance P Channel 2:100mohm; Package / Case:SOIC; Power Dissipation N Channel 2:2W; Power Dissipation P Channel 2:2W; Power Dissipation Pd:1.6W; Pulse Current Idm:15A

***rchild Semiconductor: These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
NDS8958 DISTI # NDS8958TR-ND	ON Semiconductor	MOSFET N/P-CH 30V 5.3A/4A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
NDS8958 DISTI # NDS8958CT-ND	ON Semiconductor	MOSFET N/P-CH 30V 5.3A/4A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
NDS8958 DISTI # NDS8958DKR-ND	ON Semiconductor	MOSFET N/P-CH 30V 5.3A/4A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
NDS8958 DISTI # 512-NDS8958	ON Semiconductor	MOSFET Dual N/P Channel FET Enhancement Mode RoHS: Compliant	0
NDS8958	Fairchild Semiconductor Corporation		54
NDS8958	Fairchild Semiconductor Corporation	RoHS: Not Compliant	Europe - 2350
NDS8958 DISTI # 1017727	ON Semiconductor	MOSFET, DUAL, NP, SO-8 RoHS: Compliant	0	1:$2.8500 10:$2.3900

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: NDS8435 OMO.#: OMO-NDS8435	MOSFET DISC BY MFG 2/02
	Mfr.#: NDS355AN -NL OMO.#: OMO-NDS355AN--NL-1190	Neu und Original
	Mfr.#: NDS2655 OMO.#: OMO-NDS2655-1190	Neu und Original
	Mfr.#: NDS352AP SOT23-352 OMO.#: OMO-NDS352AP-SOT23-352-1190	Neu und Original
	Mfr.#: NDS355AN-F169 OMO.#: OMO-NDS355AN-F169-ON-SEMICONDUCTOR	MSOFET N-CH SMD
	Mfr.#: NDS7002AT1G OMO.#: OMO-NDS7002AT1G-1190	Neu und Original
	Mfr.#: NDS8434A-NL OMO.#: OMO-NDS8434A-NL-1190	INSTOCK
	Mfr.#: NDS8934NL OMO.#: OMO-NDS8934NL-1190	Neu und Original
	Mfr.#: NDS8958-NL OMO.#: OMO-NDS8958-NL-1190	Neu und Original
	Mfr.#: NDS9407_Q OMO.#: OMO-NDS9407-Q-1190	MOSFET Single P-Ch MOSFET Power Trench

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2500
Menge eingeben:

Der aktuelle Preis von NDS8958 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,00 $~~; ~~0,00 $~~

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500: ~~0,00 $~~; ~~0,00 $~~

1000: ~~0,00 $~~; ~~0,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

NDS895 4
NDS89 27
NDS8 71
NDS 443

NDS8958

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes