SiZ328DT-T1-GE3

SiZ328DT-T1-GE3
Mfr. #:
SiZ328DT-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 25V Vds 16V Vgs PowerPAIR 3 x 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SiZ328DT-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SiZ328DT-T1-GE3 DatasheetSiZ328DT-T1-GE3 Datasheet (P4-P6)SiZ328DT-T1-GE3 Datasheet (P7-P9)SiZ328DT-T1-GE3 Datasheet (P10-P12)
ECAD Model:
Mehr Informationen:
SiZ328DT-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAIR-3x3-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
25 V
Id - Kontinuierlicher Drainstrom:
25.3 A, 30 A
Rds On - Drain-Source-Widerstand:
10 mOhms, 15 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.1 V
Vgs - Gate-Source-Spannung:
- 12 V, 16 V
Qg - Gate-Ladung:
6.9 nC, 11.3 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
16.2 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET, PowerPAIR
Verpackung:
Spule
Serie:
GRÖSSE
Transistortyp:
2 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
25 S, 42 S
Abfallzeit:
5 ns, 5 ns
Produktart:
MOSFET
Anstiegszeit:
5 ns, 11 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
12 ns, 15 ns
Typische Einschaltverzögerungszeit:
7 ns, 8 ns
Tags
SiZ32, SiZ3, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Bild Teil # Beschreibung
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10M04SAE144C8G

Mfr.#: 10M04SAE144C8G

OMO.#: OMO-10M04SAE144C8G

FPGA - Field Programmable Gate Array
RN73C2A511RBTD

Mfr.#: RN73C2A511RBTD

OMO.#: OMO-RN73C2A511RBTD

Thin Film Resistors - SMD RN 0805 511R 0.1% 10PPM 5KRL
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Mfr.#: M20-1060600

OMO.#: OMO-M20-1060600

Headers & Wire Housings 6 PIN SIL HOUSING
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Mfr.#: RN73C2A2K0BTD

OMO.#: OMO-RN73C2A2K0BTD

Thin Film Resistors - SMD RN 0805 2K0 0.1% 10PPM 5KRL
10M04SAE144C8G

Mfr.#: 10M04SAE144C8G

OMO.#: OMO-10M04SAE144C8G-INTEL

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Mfr.#: CDCE813QPWRQ1

OMO.#: OMO-CDCE813QPWRQ1-TEXAS-INSTRUMENTS

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W5500 Ethernet Shield

Mfr.#: W5500 Ethernet Shield

OMO.#: OMO-W5500-ETHERNET-SHIELD-WIZNET

Ethernet Development Tools Ethernet Shield
RN73C2A511RBTD

Mfr.#: RN73C2A511RBTD

OMO.#: OMO-RN73C2A511RBTD-TE-CONNECTIVITY-AMP

Thin Film Resistors - SMD RN 0805 511R 0.1% 10PPM 5KRL
RN73C2A2K0BTD

Mfr.#: RN73C2A2K0BTD

OMO.#: OMO-RN73C2A2K0BTD-TE-CONNECTIVITY-AMP

Thin Film Resistors - SMD RN 0805 2K0 0.1% 10PPM 5KRL
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1989
Menge eingeben:
Der aktuelle Preis von SiZ328DT-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,96 $
0,96 $
10
0,77 $
7,66 $
100
0,58 $
58,10 $
500
0,48 $
240,00 $
1000
0,38 $
384,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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