IRF7821TRPBF

Mfr. #:: IRF7821TRPBF
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-CH 30V 13.6A 8-SOIC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IRF7821TRPBF Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: IRF7821TRPBF Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller: Infineon-Technologien

Produktkategorie: FETs - Einzeln

Serie: HEXFETR

Verpackung: Digi-ReelR Alternative Verpackung

Gewichtseinheit: 0.017870 oz

Montageart: SMD/SMT

Paket-Koffer: 8-SOIC (0.154", 3.90mm Width)

Technologie: Si

Betriebstemperatur: -55°C ~ 155°C (TJ)

Befestigungsart: Oberflächenmontage

Anzahl der Kanäle: 1 Channel

Lieferanten-Geräte-Paket: 8-SO

Aufbau: Single

FET-Typ: MOSFET N-Kanal, Metalloxid

Leistung max: 2.5W

Transistor-Typ: 1 N-Channel

Drain-zu-Source-Spannung-Vdss: 30V

Eingangskapazität-Ciss-Vds: 1010pF @ 15V

FET-Funktion: Standard

Strom-Dauer-Drain-Id-25°C: 13.6A (Ta)

Rds-On-Max-Id-Vgs: 9.1 mOhm @ 13A, 10V

Vgs-th-Max-Id: 1V @ 250μA

Gate-Lade-Qg-Vgs: 14nC @ 4.5V

Pd-Verlustleistung: 2.5 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 7.3 ns

Anstiegszeit: 2.7 ns

Vgs-Gate-Source-Spannung: 20 V

ID-Dauer-Drain-Strom: 13.6 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Vgs-th-Gate-Source-Threshold-Voltage: 1 V

Rds-On-Drain-Source-Widerstand: 9.5 mOhms

Transistor-Polarität: N-Kanal

Typische-Ausschaltverzögerungszeit: 9.7 ns

Typische-Einschaltverzögerungszeit: 6.3 ns

Qg-Gate-Ladung: 9.3 nC

Vorwärts-Transkonduktanz-Min: 22 S

Tags: IRF7821T, IRF7821, IRF782, IRF78, IRF7, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF7821TRPBF Beschreibung

***Components: In a Pack of 5, IRF7821PBF N-Channel MOSFET, 13.6 A, 30 V HEXFET, 8-Pin SOIC Infineon

***ure Electronics: Single N-Channel 30 V 12.5 mOhm 14 nC HEXFET® Power Mosfet - SOIC-8

***ied Electronics & Automation: MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7 Milliohms;ID 13.6A;SO-8;PD 2.5W;VGS +/-20V

***p One Stop Global: Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC Tube

***trelec: MOSFET Operating temperature: -55...155 °C Housing type: SO-8 Polarity: N Power dissipation: 2.5 W

***ernational Rectifier: 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

***p One Stop Japan: Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC

***ment14 APAC: 场效应管, MOSFET, N沟道, 30V, 13.6A, SOIC;

***th Star Micro: MOSFET N-CH 30V 13.6A 8-SOIC

***ponent Sense: MOSFET MOSFT 30V 13.6A 9.1mOhm 9.3nC

***an P&S: 30V, 13.6A, N channel power MOSFET

***eco: IC,IRF7821TRPBF,30V SINGLE N-C HANNEL HEXFET PLCC32<NV

***ronik: N-CH 30V 13,6A 9,1mOhm SO8 RoHSconf

***ark: Trench_Mosfets Rohs Compliant: Yes

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

***nell: MOSFET, N, LOGIC, SO-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:13.6A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0091ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1V; Dissipazione di Potenza Pd:2.5W; Modello Case Transistor:SOIC; No. di Pin:8Pin; Temperatura di Esercizio Max:155°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:13.6A; Corrente di Impulso Idm:100A; Intervallo Temperatura di Esercizio:Da -55°C a +155°C; Larghezza Esterna:4.05mm; Livello Temperatura a Piena Potenza:25°C; Lunghezza/Altezza Esterna:1.75mm; Marcatura SMD:IRF7821PBF; Passo Fila:6.3mm; Profondità Esterna:5.2mm; Temperatura di Corrente:25°C; Temperatura di Esercizio Min:-55°C; Tensione Vds Tipica:30V; Tensione Vgs Max:1V; Tensione Vgs di Misurazione Rds on:10V

IRF7821TRPBF Mehr Informationen

30V HEXFET® Power MOSFETs: Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IRF7821TRPBF DISTI # V72:2272_13890750	Infineon Technologies AG	Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC T/R RoHS: Compliant	3330	3000:$0.3081 1000:$0.3381 500:$0.4129 250:$0.4597 100:$0.4649 25:$0.5731 10:$0.5803 1:$0.6634
IRF7821TRPBF DISTI # IRF7821PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 30V 13.6A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	11085In Stock	1000:$0.4352 500:$0.5513 100:$0.7109 10:$0.8990 1:$1.0200
IRF7821TRPBF DISTI # IRF7821PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 13.6A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	11085In Stock	1000:$0.4352 500:$0.5513 100:$0.7109 10:$0.8990 1:$1.0200
IRF7821TRPBF DISTI # IRF7821PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 30V 13.6A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	8000In Stock	4000:$0.3944
IRF7821TRPBF DISTI # 30609109	Infineon Technologies AG	Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC T/R RoHS: Compliant	13100	200:$0.5635 100:$0.5827 50:$0.7166 31:$0.7829
IRF7821TRPBF DISTI # 8060902	Infineon Technologies AG	Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC T/R RoHS: Compliant	8000	4000:$0.2026
IRF7821TRPBF DISTI # 30611871	Infineon Technologies AG	Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC T/R RoHS: Compliant	6400	23:$1.1100
IRF7821TRPBF DISTI # 30150683	Infineon Technologies AG	Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC T/R RoHS: Compliant	3330	500:$0.3643 250:$0.4593 100:$0.4644 25:$0.5724 23:$0.5794
IRF7821TRPBF DISTI # IRF7821TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7821TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.2949 8000:$0.2839 16000:$0.2739 24000:$0.2649 40000:$0.2599
IRF7821TRPBF DISTI # IRF7821TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC T/R (Alt: IRF7821TRPBF) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0
IRF7821TRPBF DISTI # 40M7974	Infineon Technologies AG	N CHANNEL MOSFET, 30V, 13.6A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:13.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):7mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Product Range:- , RoHS Compliant: Yes	660	1:$0.8400 25:$0.7170 50:$0.6340 100:$0.5510 250:$0.5190 500:$0.4870 1000:$0.3850
IRF7821TRPBF. DISTI # 26AC0647	Infineon Technologies AG	TRENCH_MOSFETS , ROHS COMPLIANT: YES	0	1:$0.2950 8000:$0.2840 16000:$0.2740 24000:$0.2650 40000:$0.2600
IRF7821TRPBF DISTI # 70017725	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 7 Milliohms,ID 13.6A,SO-8,PD 2.5W,VGS +/-20V RoHS: Compliant	0	4000:$1.0300
IRF7821TRPBF DISTI # 942-IRF7821TRPBF	Infineon Technologies AG	MOSFET MOSFT 30V 13.6A 9.1mOhm 9.3nC RoHS: Compliant	13554	1:$0.8500 10:$0.7170 100:$0.5510 500:$0.4870 1000:$0.3850 4000:$0.3410
IRF7821TRPBF DISTI # 9154963P	Infineon Technologies AG	MOSFET N-CHANNEL HEXFET 30V 13.6A SO-8, RL	4000	100:£0.3690 400:£0.3260 1000:£0.2980
IRF7821TRPBF	International Rectifier	MOSFET Transistor, N-Channel, SO	1948	1189:$0.7650 637:$0.8415 1:$2.0400
IRF7821TRPBF	it	RoHS: Compliant	Europe - 3170
IRF7821TRPBF	International Rectifier	INSTOCK	29882
IRF7821TRPBF	International Rectifier	INSTOCK	5477
IRF7821TRPBF DISTI # 1375008	Infineon Technologies AG	N CHANNEL MOSFET, 30V, 13.6A, SOIC RoHS: Compliant	1340	1:$1.3500 10:$1.1400 100:$0.8720 500:$0.7710 1000:$0.6090 4000:$0.5400
IRF7821TRPBF DISTI # C1S322000486403	Infineon Technologies AG	Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC T/R RoHS: Compliant	6400	500:$0.4110 200:$0.4660 100:$0.4810 50:$0.5010 10:$0.7450 5:$0.8880
IRF7821TRPBF DISTI # C1S322000486397	Infineon Technologies AG	Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC T/R RoHS: Compliant	8000	4000:$0.3170
IRF7821TRPBF DISTI # C1S322000486388	Infineon Technologies AG	Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC T/R RoHS: Compliant	13100	500:$0.3490 200:$0.3820 100:$0.3940 50:$0.4450 10:$0.6140 5:$0.6620
IRF7821TRPBF DISTI # 1375008	Infineon Technologies AG	N CHANNEL MOSFET, 30V, 13.6A, SOIC RoHS: Compliant	1166	1:£0.7380 25:£0.6300 50:£0.5570 100:£0.4840 250:£0.4560

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: IRF7828PBF OMO.#: OMO-IRF7828PBF	MOSFET 30V 1 N-CH HEXFET 12.5mOhms 9.3nC
	Mfr.#: IRF7828TRPBF OMO.#: OMO-IRF7828TRPBF	MOSFET MOSFT 30V 13.6A 12.5mOhm 9.3nC
	Mfr.#: IRF7821TRPBF-CUT TAPE OMO.#: OMO-IRF7821TRPBF-CUT-TAPE-1190	Neu und Original
	Mfr.#: IRF7822TRR OMO.#: OMO-IRF7822TRR-VISHAY	MOSFET N-CH 30V 18A 8-SOIC
	Mfr.#: IRF7822TRPBF. OMO.#: OMO-IRF7822TRPBF--1190	Neu und Original
	Mfr.#: IRF7820TRPBF OMO.#: OMO-IRF7820TRPBF-INFINEON-TECHNOLOGIES	MOSFET N CH 200V 3.7A 8-SO
	Mfr.#: IRF7822TR OMO.#: OMO-IRF7822TR-1190	18 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
	Mfr.#: IRF7822TRPBF OMO.#: OMO-IRF7822TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 18A 8-SOIC
	Mfr.#: IRF7823TRPBF OMO.#: OMO-IRF7823TRPBF-1190	Neu und Original
	Mfr.#: IRF7821GTRPBF OMO.#: OMO-IRF7821GTRPBF-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET MOSFT 30V 13.6A 9.1mOhm 9.3nC

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3500
Menge eingeben:

Der aktuelle Preis von IRF7821TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,33 $~~; ~~0,33 $~~

10: ~~0,31 $~~; ~~3,14 $~~

100: ~~0,30 $~~; ~~29,76 $~~

500: ~~0,28 $~~; ~~140,55 $~~

1000: ~~0,26 $~~; ~~264,50 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IRF7821TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes