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SI2338DS-T1-GE3

SI2338DS-T1-GE3
Mfr. #:
SI2338DS-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds 20V Vgs SOT-23
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI2338DS-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2338DS-T1-GE3 DatasheetSI2338DS-T1-GE3 Datasheet (P4-P6)SI2338DS-T1-GE3 Datasheet (P7-P9)SI2338DS-T1-GE3 Datasheet (P10)
ECAD Model:
Mehr Informationen:
SI2338DS-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-23-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
6 A
Rds On - Drain-Source-Widerstand:
28 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.2 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
8.2 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI2
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
24 S
Abfallzeit:
7 ns
Produktart:
MOSFET
Anstiegszeit:
11 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
20 ns
Typische Einschaltverzögerungszeit:
3 ns
Teil # Aliase:
SI2338DS-GE3
Gewichtseinheit:
0.000282 oz
Tags
SI2338, SI233, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
Si2338DS-T1-GE3 N-channel MOSFET Transistor; 6 A; 30 V; 3-Pin SOT-23
***Components
In a Pack of 20, N-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23 Vishay Si2338DS-T1-GE3
***ure Electronics
N-Channel 30 V 28 mOhm 13 nC Surface Mount Power Mosfet - SOT-23-3
***ical
Trans MOSFET N-CH 30V 6A 3-Pin SOT-23 T/R
***et
N-CH MOSFET SOT-23 30V 28MOHM @ 10V
***i-Key
MOSFET N-CH 30V 6A SOT23
***ronik
N-CH 30V 6A 28mOhm SOT23
***
30V N CHANNEL
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.023Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:2.5W; No. Of Pins:3Pins Rohs Compliant: No
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 6A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:2.5W; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2016)
***nell
MOSFET, CA-N, 30V, 6A, SOT-23; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.023ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.5V; Dissipazione di Potenza Pd:2.5W; Modello Case Transistor:SOT-23; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (20-Jun-2016)
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Teil # Mfg. Beschreibung Aktie Preis
SI2338DS-T1-GE3
DISTI # V72:2272_09216814		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.5A 3-Pin SOT-23 T/R
RoHS: Compliant		65
  • 25:$0.4348
  • 10:$0.4513
  • 1:$0.5834
SI2338DS-T1-GE3
DISTI # V36:1790_09216814		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.5A 3-Pin SOT-23 T/R
RoHS: Compliant		0
  • 3000000:$0.1568
  • 1500000:$0.1570
  • 300000:$0.1677
  • 30000:$0.1845
  • 3000:$0.1872
SI2338DS-T1-GE3
DISTI # SI2338DS-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 6A SOT23
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1072In Stock
  • 1000:$0.2114
  • 500:$0.2736
  • 100:$0.3482
  • 10:$0.4660
  • 1:$0.5400
SI2338DS-T1-GE3
DISTI # SI2338DS-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 6A SOT23
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1072In Stock
  • 1000:$0.2114
  • 500:$0.2736
  • 100:$0.3482
  • 10:$0.4660
  • 1:$0.5400
SI2338DS-T1-GE3
DISTI # SI2338DS-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 6A SOT23
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 30000:$0.1546
  • 15000:$0.1630
  • 6000:$0.1751
  • 3000:$0.1872
SI2338DS-T1-GE3
DISTI # 27050969		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.5A 3-Pin SOT-23 T/R
RoHS: Compliant		65
  • 44:$0.5834
SI2338DS-T1-GE3
DISTI # SI2338DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 6A 3-Pin SOT-23 T/R - Cut TR (SOS) (Alt: SI2338DS-T1-GE3)
RoHS: Not Compliant
Min Qty: 1
Container: Cut Tape		Americas - 54
  • 1500:$0.1716
  • 750:$0.1769
  • 375:$0.1825
  • 188:$0.1885
  • 94:$0.1949
  • 47:$0.2018
  • 1:$0.2091
SI2338DS-T1-GE3
DISTI # SI2338DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 6A 3-Pin SOT-23 T/R (Alt: SI2338DS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.1469
  • 18000:€0.1579
  • 12000:€0.1709
  • 6000:€0.1989
  • 3000:€0.2919
SI2338DS-T1-GE3
DISTI # SI2338DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 6A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2338DS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.1469
  • 18000:$0.1509
  • 12000:$0.1549
  • 6000:$0.1619
  • 3000:$0.1669
SI2338DS-T1-GE3
DISTI # SI2338DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 6A 3-Pin SOT-23 T/R (Alt: SI2338DS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI2338DS-T1-GE3
    DISTI # 01AC4979    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 6A, SOT-23,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power Dissipation RoHS Compliant: Yes11320
    • 1000:$0.2170
    • 500:$0.2700
    • 250:$0.2960
    • 100:$0.3210
    • 50:$0.3540
    • 25:$0.3860
    • 10:$0.4190
    • 1:$0.5430
    SI2338DS-T1-GE3.
    DISTI # 30AC0143    		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power Dissipation Pd:2.5W,No. of Pins:3Pins RoHS Compliant: No0
    • 1:$0.1980
    • 3000:$0.1980
    SI2338DS-T1-GE3
    DISTI # 70459511    		Vishay SiliconixSi2338DS-T1-GE3 N-channel MOSFET Transistor,6 A,30 V,3-Pin SOT-23
    RoHS: Compliant    		0
    • 3000:$0.3930
    • 6000:$0.3760
    SI2338DS-T1-GE3
    DISTI # 78-SI2338DS-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SOT-23
    RoHS: Compliant    		18234
    • 1:$0.5400
    • 10:$0.4150
    • 100:$0.3080
    • 500:$0.2530
    • 1000:$0.1950
    • 3000:$0.1780
    • 6000:$0.1660
    • 9000:$0.1550
    • 24000:$0.1470
    SI2338DS-T1-GE3
    DISTI # 8123126    		Vishay IntertechnologiesTRANS MOSFET N-CH 30V 5.5A 3-PIN, PK760
    • 3000:£0.1500
    • 1500:£0.1530
    • 600:£0.1900
    • 300:£0.2330
    • 20:£0.3230
    SI2338DS-T1-GE3
    DISTI # 8123126P    		Vishay IntertechnologiesTRANS MOSFET N-CH 30V 5.5A 3-PIN, RL7120
    • 3000:£0.1500
    • 1500:£0.1530
    • 600:£0.1900
    • 300:£0.2330
    SI2338DS-T1-GE3
    DISTI # 2679676    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 6A, SOT-23
    RoHS: Compliant    		39000
    • 3000:$0.2870
    SI2338DS-T1-GE3
    DISTI # 2646366    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 6A, SOT-23
    RoHS: Compliant    		16921
    • 1000:$0.3190
    • 500:$0.4130
    • 100:$0.5250
    • 10:$0.7020
    • 1:$0.8100
    SI2338DS-T1-GE3
    DISTI # 2679676    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 6A, SOT-2345000
    • 9000:£0.1540
    • 3000:£0.1750
    SI2338DS-T1-GE3
    DISTI # TMOS2497    		Vishay IntertechnologiesN-CH 30V 6A 28mOhm SOT23
    RoHS: Compliant    		Stock DE - 0Stock HK - 0Stock US - 0
    • 3000:$0.2600
    • 6000:$0.2451
    • 9000:$0.2302
    • 12000:$0.2080
    • 15000:$0.2005
    SI2338DS-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SOT-23
    RoHS: Compliant    		Americas - 6000
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      Verfügbarkeit
      Aktie:
      23
      Auf Bestellung:
      2006
      Menge eingeben:
      Der aktuelle Preis von SI2338DS-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,54 $
      0,54 $
      10
      0,42 $
      4,15 $
      100
      0,31 $
      30,80 $
      500
      0,25 $
      126,50 $
      1000
      0,20 $
      195,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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