SISH615ADN-T1-GE3

SISH615ADN-T1-GE3
Mfr. #:
SISH615ADN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET -20V Vds; 12V Vgs PowerPAK 1212-8SH
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SISH615ADN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SISH615ADN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK1212-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
35 A
Rds On - Drain-Source-Widerstand:
4.4 mOhms
Vgs th - Gate-Source-Schwellenspannung:
- 1.5 V
Vgs - Gate-Source-Spannung:
12 V
Qg - Gate-Ladung:
183 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
52 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Serie:
SIS
Transistortyp:
1 P-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
82 S
Abfallzeit:
26 ns
Produktart:
MOSFET
Anstiegszeit:
40 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
75 ns
Typische Einschaltverzögerungszeit:
41 ns
Tags
SISH6, SISH, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SISH615ADN-T1-GE3
DISTI # V72:2272_22759346
Vishay IntertechnologiesP-Channel 20 V (D-S) MOSFET PowerPAK 1212-8SH 1G , 4.4 m @ 10Vm @ 7.5V 6 m @ 4.5V3000
  • 3000:$0.2128
  • 1000:$0.2319
  • 500:$0.2950
  • 250:$0.3464
  • 100:$0.3608
  • 25:$0.4643
  • 10:$0.5207
  • 1:$0.6406
SISH615ADN-T1-GE3
DISTI # SISH615ADN-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CHAN 20 V POWERPAK 1212
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5384In Stock
  • 1000:$0.2596
  • 500:$0.3245
  • 100:$0.4104
  • 10:$0.5350
  • 1:$0.6100
SISH615ADN-T1-GE3
DISTI # SISH615ADN-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CHAN 20 V POWERPAK 1212
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5384In Stock
  • 1000:$0.2596
  • 500:$0.3245
  • 100:$0.4104
  • 10:$0.5350
  • 1:$0.6100
SISH615ADN-T1-GE3
DISTI # SISH615ADN-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CHAN 20 V POWERPAK 1212
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 30000:$0.1995
  • 15000:$0.2047
  • 6000:$0.2126
  • 3000:$0.2284
SISH615ADN-T1-GE3
DISTI # 31081364
Vishay IntertechnologiesP-Channel 20 V (D-S) MOSFET PowerPAK 1212-8SH 1G , 4.4 m @ 10Vm @ 7.5V 6 m @ 4.5V3000
  • 3000:$0.2128
  • 1000:$0.2319
  • 500:$0.2950
  • 250:$0.3464
  • 100:$0.3608
  • 34:$0.4643
SISH615ADN-T1-GE3
DISTI # SISH615ADN-T1-GE3
Vishay IntertechnologiesP-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SISH615ADN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel
Americas - 0
  • 60000:$0.1919
  • 30000:$0.1969
  • 18000:$0.2029
  • 12000:$0.2109
  • 6000:$0.2179
SISH615ADN-T1-GE3
DISTI # 81AC3497
Vishay IntertechnologiesP-CHANNEL 20-V (D-S) MOSFET0
  • 50000:$0.1940
  • 30000:$0.2030
  • 20000:$0.2180
  • 10000:$0.2330
  • 5000:$0.2520
  • 1:$0.2580
SISH615ADN-T1-GE3
DISTI # 99AC9585
Vishay IntertechnologiesMOSFET, P-CH, -20V, -35A, 150DEG C, 52W,Transistor Polarity:P Channel,Continuous Drain Current Id:-35A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.0035ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.5V,RoHS Compliant: Yes20
  • 1000:$0.2420
  • 500:$0.3030
  • 250:$0.3350
  • 100:$0.3680
  • 50:$0.4060
  • 25:$0.4450
  • 10:$0.4840
  • 1:$0.5960
SISH615ADN-T1-GE3
DISTI # 78-SISH615ADN-T1-GE3
Vishay IntertechnologiesMOSFET -20V Vds,12V Vgs PowerPAK 1212-8SH
RoHS: Compliant
4584
  • 1:$0.5900
  • 10:$0.4780
  • 100:$0.3630
  • 500:$0.3000
  • 1000:$0.2400
  • 3000:$0.2170
  • 6000:$0.2020
  • 9000:$0.1950
  • 24000:$0.1870
SISH615ADN-T1-GE3
DISTI # 3019134
Vishay IntertechnologiesMOSFET, P-CH, -20V, -35A, 150DEG C, 52W
RoHS: Compliant
0
  • 1000:$0.3400
  • 500:$0.4290
  • 250:$0.4800
  • 100:$0.5310
  • 25:$0.7130
  • 5:$0.7810
SISH615ADN-T1-GE3
DISTI # 3019134
Vishay IntertechnologiesMOSFET, P-CH, -20V, -35A, 150DEG C, 52W5930
  • 500:£0.2180
  • 250:£0.2410
  • 100:£0.2640
  • 10:£0.3870
  • 1:£0.4900
Bild Teil # Beschreibung
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Mfr.#: LPV821DBVR

OMO.#: OMO-LPV821DBVR

Operational Amplifiers - Op Amps ZERO-DRIFT LOW POWER AMPLIFIER
DST2080S

Mfr.#: DST2080S

OMO.#: OMO-DST2080S

Schottky Diodes & Rectifiers 80V 20A
MSP430F5310IRGCR

Mfr.#: MSP430F5310IRGCR

OMO.#: OMO-MSP430F5310IRGCR

16-bit Microcontrollers - MCU MSP430F530x Mixed Signal MCU
NTCG103JF103FT1S

Mfr.#: NTCG103JF103FT1S

OMO.#: OMO-NTCG103JF103FT1S-TDK

Thermistor NTC 10K Ohm 1% 2-Pin 0402 Surface Mount Solder Pad 3435K T/R Automotive
LPV821DBVR

Mfr.#: LPV821DBVR

OMO.#: OMO-LPV821DBVR-TEXAS-INSTRUMENTS

ZERO-DRIFT LOW POWER AMPLIFIER
ESP32-D0WDQ6

Mfr.#: ESP32-D0WDQ6

OMO.#: OMO-ESP32-D0WDQ6-ESPRESSIF-SYSTEMS

RF Module (Alt: ESP32-D0WDQ6)
DRV8873HPWPRQ1

Mfr.#: DRV8873HPWPRQ1

OMO.#: OMO-DRV8873HPWPRQ1-TEXAS-INSTRUMENTS

BRUSHED DC MOTOR DRIVER
DST2080S

Mfr.#: DST2080S

OMO.#: OMO-DST2080S-LITTELFUSE

Schottky Diodes & Rectifiers 80V 20A
NX3225SA-26.000000MHZ-G4

Mfr.#: NX3225SA-26.000000MHZ-G4

OMO.#: OMO-NX3225SA-26-000000MHZ-G4-NDK

CRYSTAL 26.0000MHZ 10PF SMD
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1987
Menge eingeben:
Der aktuelle Preis von SISH615ADN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,59 $
0,59 $
10
0,48 $
4,78 $
100
0,36 $
36,30 $
500
0,30 $
150,00 $
1000
0,24 $
240,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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