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SI3447BDV-T1-E3

SI3447BDV-T1-E3
Mfr. #:
SI3447BDV-T1-E3
Hersteller:
Vishay
Beschreibung:
IGBT Transistors MOSFET 12V 5.2A 2W
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI3447BDV-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI3447BDV-T1-E3 DatasheetSI3447BDV-T1-E3 Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Einzeln
Tags
SI3447BDV-T, SI3447B, SI3447, SI344, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET P-CH 12V 4.5A 6-Pin TSOP T/R
***ark
MOSFET, P, TSOP-6; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-12V; Current, Id Cont:4.5A; Resistance, Rds On:0.04ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:-1V; Case Style:TSOP; Termination ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, P, TSOP-6; Transistor Polarity:P Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:12V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:1.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Charge Qrr @ Tj = 25°C Typ:9.3nC; Current Id Max:-4.5A; Current Temperature:25°C; External Depth:2.85mm; External Length / Height:1.45mm; External Width:3mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance @ Vgs = 2.5V:53mohm; On State Resistance @ Vgs = 4.5V:40mohm; Package / Case:TSOP; Power Dissipation Pd:1.1W; Power Dissipation Pd:1.1W; Pulse Current Idm:20A; Reverse Recovery Time trr Typ:40ns; SMD Marking:B7xxx; Termination Type:SMD; Voltage Vds:12V; Voltage Vds Typ:-12V; Voltage Vgs Max:-8V; Voltage Vgs Rds on Measurement:4.5V
Teil # Mfg. Beschreibung Aktie Preis
SI3447BDV-T1-E3
DISTI # SI3447BDV-T1-E3TR-ND		Vishay SiliconixMOSFET P-CH 12V 4.5A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SI3447BDV-T1-E3
    DISTI # SI3447BDV-T1-E3CT-ND    		Vishay SiliconixMOSFET P-CH 12V 4.5A 6-TSOP
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SI3447BDV-T1-E3
      DISTI # SI3447BDV-T1-E3DKR-ND      		Vishay SiliconixMOSFET P-CH 12V 4.5A 6-TSOP
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SI3447BDV-T1-E3
        DISTI # 70026200        		Vishay SiliconixMOSFET,12V P-CH 95 MOHM @ 1.8V VGS Rated Trench
        RoHS: Compliant        		0
        • 3000:$0.2400
        • 6000:$0.2200
        • 9000:$0.2000
        SI3447BDV-T1-E3
        DISTI # 781-SI3447BDV-E3        		Vishay IntertechnologiesMOSFET 12V 5.2A 2W
        RoHS: Compliant        		0
          SI3447BDV-T1-E3Vishay Intertechnologies 1434
            SI3447BDV-T1-E3Vishay Siliconix 1915
            • 9:$0.5625
            • 37:$0.3656
            • 138:$0.2109
            • 476:$0.1800
            • 1029:$0.1575
            SI3447BDV-T1-E3Vishay SemiconductorsSMALL SIGNAL FIELD-EFFECT TRANSISTOR, 4.5A I(D), 12V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET1532
            • 890:$0.1950
            • 161:$0.2250
            • 1:$0.7500
            SI3447BDV-T1-E3
            DISTI # 1213158            		Vishay IntertechnologiesMOSFET, P, TSOP-6
            RoHS: Compliant            		0
            • 1:$0.8480
            • 10:$0.6660
            • 100:$0.5180
            • 500:$0.4340
            • 1000:$0.3730
            Bild Teil # Beschreibung
            SI3447BDV-T1-GE3

            Mfr.#: SI3447BDV-T1-GE3

            OMO.#: OMO-SI3447BDV-T1-GE3

            		 MOSFET RECOMMENDED ALT 78-SI3493DDV-T1-GE3
            SI3447BDV-T1-E3

            Mfr.#: SI3447BDV-T1-E3

            OMO.#: OMO-SI3447BDV-T1-E3-VISHAY

            		 IGBT Transistors MOSFET 12V 5.2A 2W
            SI3447BDV

            Mfr.#: SI3447BDV

            OMO.#: OMO-SI3447BDV-1190

            		 Neu und Original
            SI3447BDV-T1

            Mfr.#: SI3447BDV-T1

            OMO.#: OMO-SI3447BDV-T1-1190

            		 Neu und Original
            SI3447BDV-T1-GE3

            Mfr.#: SI3447BDV-T1-GE3

            OMO.#: OMO-SI3447BDV-T1-GE3-VISHAY

            		 MOSFET P-CH 12V 4.5A 6-TSOP
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            2000
            Menge eingeben:
            Der aktuelle Preis von SI3447BDV-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
            Referenzpreis (USD)
            Menge
            Stückpreis
            ext. Preis
            1
            0,24 $
            0,24 $
            10
            0,22 $
            2,24 $
            100
            0,21 $
            21,26 $
            500
            0,20 $
            100,40 $
            1000
            0,19 $
            189,00 $
            Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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