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IXFN100N50P

IXFN100N50P
Mfr. #:
IXFN100N50P
Hersteller:
Littelfuse
Beschreibung:
MOSFET 500V 100A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFN100N50P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN100N50P DatasheetIXFN100N50P Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXFN100N50P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Chassishalterung
Paket / Koffer:
SOT-227-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
500 V
Id - Kontinuierlicher Drainstrom:
90 A
Rds On - Drain-Source-Widerstand:
49 mOhms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1040 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Höhe:
9.6 mm
Länge:
38.23 mm
Serie:
IXFN100N50
Transistortyp:
1 N-Channel
Breite:
25.42 mm
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
80 S
Abfallzeit:
26 ns
Produktart:
MOSFET
Anstiegszeit:
29 ns
Werkspackungsmenge:
10
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
110 ns
Typische Einschaltverzögerungszeit:
36 ns
Gewichtseinheit:
1.058219 oz
Tags
IXFN100N5, IXFN100N, IXFN100, IXFN10, IXFN1, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Teil # Mfg. Beschreibung Aktie Preis
IXFN100N50P
DISTI # 33960007		IXYS CorporationTrans MOSFET N-CH 500V 90A 4-Pin SOT-227B
RoHS: Compliant		20
  • 1:$19.3717
IXFN100N50P
DISTI # IXFN100N50P-ND		IXYS CorporationMOSFET N-CH 500V 90A SOT-227B
RoHS: Compliant
Min Qty: 1
Container: Tube		100In Stock
  • 100:$22.9416
  • 30:$24.6840
  • 10:$26.8620
  • 1:$29.0400
IXFN100N50P
DISTI # V36:1790_15877008		IXYS CorporationTrans MOSFET N-CH 500V 90A 4-Pin SOT-227B
RoHS: Compliant		0
  • 10000:$16.9100
  • 5000:$16.9200
  • 1000:$18.8400
  • 100:$23.4200
  • 10:$24.2600
IXFN100N50P
DISTI # V99:2348_15877008		IXYS CorporationTrans MOSFET N-CH 500V 90A 4-Pin SOT-227B
RoHS: Compliant		0
    IXFN100N50P
    DISTI # 58M7617    		IXYS CorporationMOSFET, N CHANNEL, 500V, 0.049OHM, 90A, SOT-227B-4,Transistor Polarity:N Channel,Continuous Drain Current Id:90A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.049ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5VRoHS Compliant: Yes40
    • 250:$21.2600
    • 100:$23.1700
    • 50:$23.8700
    • 25:$24.9300
    • 10:$27.1300
    • 5:$27.8700
    • 1:$29.3300
    IXFN100N50P
    DISTI # 747-IXFN100N50P    		IXYS CorporationMOSFET 500V 100A
    RoHS: Compliant    		68
    • 1:$29.0400
    • 5:$27.5900
    • 10:$26.8600
    • 25:$24.6800
    • 50:$23.6300
    • 100:$22.9400
    • 200:$21.0500
    IXFN100N50P
    DISTI # IXFN100N50P    		IXYS CorporationModule,single transistor,500V,75A,SOT227B,Ugs: ±30V,screw8
    • 10:$24.4400
    • 3:$27.7000
    • 1:$30.7400
    IXFN100N50P
    DISTI # 1427318    		IXYS CorporationMOSFET, N, SOT-227B
    RoHS: Compliant    		0
    • 100:$34.5800
    • 30:$37.2000
    • 10:$40.4900
    • 1:$43.7600
    IXFN100N50P
    DISTI # 1427318    		IXYS CorporationMOSFET, N, SOT-227B0
    • 100:£16.7000
    • 50:£18.7500
    • 10:£19.5800
    • 5:£21.8900
    • 1:£23.0500
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    Verfügbarkeit
    Aktie:
    18
    Auf Bestellung:
    2001
    Menge eingeben:
    Der aktuelle Preis von IXFN100N50P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    29,04 $
    29,04 $
    5
    27,59 $
    137,95 $
    10
    26,86 $
    268,60 $
    25
    24,68 $
    617,00 $
    50
    23,63 $
    1 181,50 $
    100
    22,94 $
    2 294,00 $
    200
    21,05 $
    4 210,00 $
    500
    20,04 $
    10 020,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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