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FDMQ8203

FDMQ8203
Mfr. #:
FDMQ8203
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET Dual PT5 N-Ch & Dual PT1 PCH PowerTrench
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMQ8203 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FDMQ8203 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
MLP-12
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal, P-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V, 80 V
Id - Kontinuierlicher Drainstrom:
6 A
Rds On - Drain-Source-Widerstand:
110 mOhms, 190 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V, 1.6 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
2.9 nC, 13 nC
Maximale Betriebstemperatur:
+ 125 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Dual
Handelsname:
PowerTrench
Verpackung:
Spule
Höhe:
0.8 mm
Länge:
5 mm
Serie:
FDMQ8203
Transistortyp:
1 N-Channel, 1 P-Channel
Breite:
4.5 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
6 S
Abfallzeit:
1.9 ns, 2.7 ns
Produktart:
MOSFET
Anstiegszeit:
1.3 ns, 2.8 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.007408 oz
Tags
FDMQ82, FDMQ, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***rchild Semiconductor
This quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge.
***Yang
Trans MOSFET N/P-CH 100V/80V 3.4A/2.6A 12-Pin MLP EP T/R - Tape and Reel
***r Electronics
Power Field-Effect Transistor, 3.4A I(D), 100V, 0.11ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, NNPP CH, MLP 4.5X5; Transistor Polarity:Dual N and Dual P Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:22W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:12; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***Yang
Transistor MOSFET Array Dual N-CH 100V 2.7A 8-Pin SOIC T/R - Tape and Reel
***emi
Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 2.7A, 105mΩ
***ure Electronics
2N-Channel 100 V 2.7 A 105 mOhm Shielded Power Trench Mosfet - SOIC-8
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
***nell
MOSFET, NN CH, 100V, 2.7A, 8SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.086ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***ark
MOSFET, N CH, 100V, 2.7A, SSOT-3; Transistor Polarity:N Channel; Continuous Drai
***ure Electronics
FDN8601 Series 100 V 2.7 A 109 mOhm N-Ch PowerTrench Mosfet - SuperSOT-3
***emi
N-Channel PowerTrench® MOSFET 100V, 2.7A, 109mΩ
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
***nell
MOSFET, N CH, 100V, 2.7A, SSOT-3; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0854ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SuperSOT; No. of Pins:3; MSL:MSL 1 - Unlimited
***emi
N-Channel Shielded Gate Power Trench® MOSFET, 100 V, 2.7 A, 109 mΩ
***ure Electronics
FDC8601 Series 100 V 109 mOhm N-Channel Shielded Gate PowerTrench Mosfet -SSOT-6
***r Electronics
Small Signal Field-Effect Transistor, 2.7A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
***(Formerly Allied Electronics)
MOSFET; N-Ch; Vds 60V; Vgs +/- 20V; Rds(on) 82mohm; Id 3.2A; TSOP-6; Pd 2W
***ure Electronics
N-Channel 60 V 0.01 Ohm 3.3 W Surface Mount Power Mosfet - TSOP-6
*** Source Electronics
Trans MOSFET N-CH 60V 3.2A 6-Pin TSOP T/R / MOSFET N-CH 60V 4.1A 6-TSOP
***p One Stop Global
Trans MOSFET N-CH 60V 2.9A Automotive 4-Pin(3+Tab) SOT-223 T/R
***ure Electronics
Single N-Channel 60 V 120 mOhm 9.7 nC SIPMOS® Small Signal Mosfet - SOT-223
***ark
MOSFET, N-CH, 60V, 2.9A, 150DEG C, 1.8W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***id Electronics
Transistor MOSFET N-Ch. 60V 2,7A 1,25W 0,092Ohm SOT23 IRLML0060TRPBF
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
***ure Electronics
Single N-Channel 60 V 116 mOhm 2.5 nC 1.25 W Silicon SMT Mosfet - SOT-23
***(Formerly Allied Electronics)
MOSFET, 60V, 2.7A, 92 MOHM, 2.5 NC QG, SOT-23
***icontronic
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ineon
Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1; SOT-23 Footprint | Target Applications: DC Switches; Load Switch; Load Switch High Side
***ment14 APAC
MOSFET, N CH, 60V, 2.7A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:60V; On Resistance Rds(on):78mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:1.25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.7A; Power Dissipation Pd:1.25W; Voltage Vgs Max:16V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.7 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 116 / Gate-Source Voltage V = 16 / Fall Time ns = 4.2 / Rise Time ns = 6.3 / Turn-OFF Delay Time ns = 6.8 / Turn-ON Delay Time ns = 5.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.25
GreenBridge Quad-MOSFET Solutions
ON Semiconductor GreenBridge™ Quad-MOSFET Solutions offer higher efficiency and better thermal performance. The MOSFETs offer lower conduction losses and improve power conversion efficiency. The GreenBridge are housed in a smaller form factor for high-power PoE applications.Learn More
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Teil # Mfg. Beschreibung Aktie Preis
FDMQ8203
DISTI # 33644431		ON SemiconductorTrans MOSFET N/P-CH Si 100V/80V 3.4A/2.6A 12-Pin MLP EP T/R3000
  • 3000:$1.3342
FDMQ8203
DISTI # FDMQ8203CT-ND		ON SemiconductorMOSFET 2N/2P-CH 100V/80V 12-MLP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1992In Stock
  • 1000:$1.4420
  • 500:$1.7098
  • 100:$2.0085
  • 10:$2.4510
  • 1:$2.7300
FDMQ8203
DISTI # FDMQ8203DKR-ND		ON SemiconductorMOSFET 2N/2P-CH 100V/80V 12-MLP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1992In Stock
  • 1000:$1.4420
  • 500:$1.7098
  • 100:$2.0085
  • 10:$2.4510
  • 1:$2.7300
FDMQ8203
DISTI # FDMQ8203TR-ND		ON SemiconductorMOSFET 2N/2P-CH 100V/80V 12-MLP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$1.3300
FDMQ8203
DISTI # V36:1790_06338003		ON SemiconductorTrans MOSFET N/P-CH Si 100V/80V 3.4A/2.6A 12-Pin MLP EP T/R0
  • 3000000:$1.1650
  • 1500000:$1.1660
  • 300000:$1.2280
  • 30000:$1.3160
  • 3000:$1.3300
FDMQ8203
DISTI # FDMQ8203		ON SemiconductorTrans MOSFET N/P-CH 100V/80V 3.4A/2.6A 12-Pin MLP EP T/R - Tape and Reel (Alt: FDMQ8203)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 6000:$1.1900
  • 12000:$1.1900
  • 18000:$1.1900
  • 30000:$1.1900
  • 3000:$1.2900
FDMQ8203
DISTI # FDMQ8203		ON SemiconductorTrans MOSFET N/P-CH 100V/80V 3.4A/2.6A 12-Pin MLP EP T/R (Alt: FDMQ8203)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
  • 150000:$1.6393
  • 75000:$1.6667
  • 30000:$1.7241
  • 15000:$1.7857
  • 9000:$1.8518
  • 6000:$1.9231
  • 3000:$2.0000
FDMQ8203
DISTI # FDMQ8203		ON SemiconductorTrans MOSFET N/P-CH 100V/80V 3.4A/2.6A 12-Pin MLP EP T/R - Bulk (Alt: FDMQ8203)
Min Qty: 226
Container: Bulk		Americas - 0
    FDMQ8203
    DISTI # FDMQ8203    		ON SemiconductorTrans MOSFET N/P-CH 100V/80V 3.4A/2.6A 12-Pin MLP EP T/R (Alt: FDMQ8203)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€1.0900
    • 18000:€1.1900
    • 12000:€1.2900
    • 6000:€1.3900
    • 3000:€1.6900
    FDMQ8203
    DISTI # 94T9974    		ON SemiconductorFET 100V 110.0 MOHM MLP / REEL0
    • 30000:$1.2300
    • 18000:$1.2500
    • 12000:$1.3000
    • 6000:$1.4000
    • 3000:$1.5000
    • 1:$1.5700
    FDMQ8203
    DISTI # 88T3301    		ON SemiconductorMOSFET, NNPP CHANNEL, MLP 4.5X5,Transistor Polarity:N and P Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes2723
    • 1000:$1.4100
    • 500:$1.6900
    • 250:$1.8800
    • 100:$1.9800
    • 50:$2.0800
    • 25:$2.1700
    • 10:$2.2700
    • 1:$2.6800
    FDMQ8203
    DISTI # 512-FDMQ8203    		ON SemiconductorMOSFET Dual PT5 N-Ch & Dual PT1 PCH PowerTrench
    RoHS: Compliant    		3015
    • 1:$2.6500
    • 10:$2.2500
    • 100:$1.9600
    • 250:$1.8600
    • 500:$1.6700
    • 1000:$1.4000
    • 3000:$1.3300
    FDMQ8203Fairchild Semiconductor CorporationPower Field-Effect Transistor, 3.4A I(D), 100V, 0.11ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		3000
      FDMQ8203
      DISTI # 2083359      		ON SemiconductorMOSFET, NNPP CH, MLP 4.5X52791
      • 500:£1.1900
      • 250:£1.3300
      • 100:£1.4100
      • 10:£1.6100
      • 1:£2.1500
      FDMQ8203
      DISTI # 2083359      		ON SemiconductorMOSFET, NNPP CH, MLP 4.5X5
      RoHS: Compliant      		2791
      • 3000:$2.0400
      • 1000:$2.1600
      • 500:$2.5800
      • 250:$2.8600
      • 100:$3.0100
      • 10:$3.4600
      • 1:$4.0700
      Bild Teil # Beschreibung
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      TPS2373-3RGWT

      Mfr.#: TPS2373-3RGWT

      OMO.#: OMO-TPS2373-3RGWT

      		 Power Switch ICs - POE / LAN IEEE 802.3bt PoE high-power PD interface with advanced startup 20-VQFN -40 to 125
      TPS2373-3RGWT

      Mfr.#: TPS2373-3RGWT

      OMO.#: OMO-TPS2373-3RGWT-TEXAS-INSTRUMENTS

      		 Power Over Ethernet PD Controller 0V 57V 90W 20-Pin VQFN EP
      10CL010YM164C6G

      Mfr.#: 10CL010YM164C6G

      OMO.#: OMO-10CL010YM164C6G-INTEL

      		 IC FPGA 101 I/O 164 MBGA Cyclone 10 LP
      MAL219691152E3

      Mfr.#: MAL219691152E3

      OMO.#: OMO-MAL219691152E3-VISHAY

      		 Supercapacitors / Ultracapacitors 4F 2.8V 7x14x2.5 2pin Sur Mount Flat
      TLV9064IPWT

      Mfr.#: TLV9064IPWT

      OMO.#: OMO-TLV9064IPWT-TEXAS-INSTRUMENTS

      		 4 CHANNEL, 10-MHZ, LOW-NOISE, RR
      MIMXRT1064DVL6A

      Mfr.#: MIMXRT1064DVL6A

      OMO.#: OMO-MIMXRT1064DVL6A-NXP-SEMICONDUCTORS

      		 I.MXRT1064 MPU 196MAPBGA
      CM41532768DZCT

      Mfr.#: CM41532768DZCT

      OMO.#: OMO-CM41532768DZCT-CITIZEN-FINEDEVICE

      		 CRYSTAL 32.7680KHZ 9PF SMD
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1986
      Menge eingeben:
      Der aktuelle Preis von FDMQ8203 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,65 $
      2,65 $
      10
      2,25 $
      22,50 $
      100
      1,96 $
      196,00 $
      250
      1,86 $
      465,00 $
      500
      1,67 $
      835,00 $
      1000
      1,40 $
      1 400,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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