SUM52N20-39P-E3

SUM52N20-39P-E3
Mfr. #:
SUM52N20-39P-E3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 200V 52A 250W 39mohm @ 10V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SUM52N20-39P-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SUM52N20-39P-E3 DatasheetSUM52N20-39P-E3 Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
4.83 mm
Länge:
10.67 mm
Serie:
SUMME
Breite:
9.65 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.050717 oz
Tags
SUM5, SUM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 200V 52A 3-Pin(2+Tab) TO-263
***i-Key
MOSFET N-CH 200V 52A D2PAK
***ment14 APAC
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:52A; Drain Source Voltage Vds:200V; On Resistance Rds(on):31mohm; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:3.12W; Transistor Case Style:D2-PAK; No. of Pins:3; Base Number:52; Capacitance Ciss Typ:4220pF; Package / Case:D2-PAK; Power Dissipation Pd:3.12W; Pulse Current Idm:100A; Reverse Recovery Time trr Typ:133ns; Termination Type:SMD; Transistor Type:Trench; Voltage Vds Typ:200V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Voltage Vgs th Min:2.5V
Teil # Mfg. Beschreibung Aktie Preis
SUM52N20-39P-E3
DISTI # 781-SUM52N20-39P-E3
Vishay IntertechnologiesMOSFET 200V 52A 250W 39mohm @ 10V
RoHS: Compliant
0
    SUM52N20-39P-E3
    DISTI # 1497665
    Vishay IntertechnologiesMOSFET, N, D2-PAK
    RoHS: Compliant
    0
    • 1000:$4.2400
    • 500:$4.6900
    • 100:$5.0100
    • 50:$5.2500
    • 10:$5.9600
    • 1:$6.8900
    Bild Teil # Beschreibung
    SUM52N20-39P-E3

    Mfr.#: SUM52N20-39P-E3

    OMO.#: OMO-SUM52N20-39P-E3

    MOSFET 200V 52A 250W 39mohm @ 10V
    SUM52N20-39P

    Mfr.#: SUM52N20-39P

    OMO.#: OMO-SUM52N20-39P-1190

    Neu und Original
    SUM52N20-39P-E3

    Mfr.#: SUM52N20-39P-E3

    OMO.#: OMO-SUM52N20-39P-E3-VISHAY

    MOSFET N-CH 200V 52A D2PAK
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2000
    Menge eingeben:
    Der aktuelle Preis von SUM52N20-39P-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Beginnen mit
    Neueste Produkte
    • Si7655DN -20 V P-Channel MOSFET
      Vishay's MOSFET enables lower RDS(ON) while providing a slimmer profile and matching PCB pattern.
    • P-Channel MOSFETs
      Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
    • Si8410DB Chipscale N-Channel MOSFET
      Vishay Siliconix's Si8410DB offers an extremely low on-resistance per area of 30 mΩ mm square.
    • 50 A VRPower® Solution (DrMOS)
      Vishay's VRPower® Solution solution that integrates a high- and low-side MOSFET and a MOSFET driver, optimized for synchronous buck applications.
    • Compare SUM52N20-39P-E3
      SUM50010EGE3 vs SUM50020EGE3 vs SUM50020EL
    • PowerPAIR®
      Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.
    Top