SI4866BDY-T1-GE3

Name: Vishay - SI4866BDY-T1-GE3
Brand: Vishay
SKU: OMO-3110840
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI4866BDY-T1-GE3
Hersteller:: Vishay
Beschreibung:: MOSFET N-CH 12V 21.5A 8-SOIC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI4866BDY-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: Vishay Siliconix

Produktkategorie: FETs - Einzeln

Serie: GrabenFETR

Verpackung: Digi-ReelR Alternative Verpackung

Teil-Aliasnamen: SI4866BDY-GE3

Gewichtseinheit: 0.006596 oz

Montageart: SMD/SMT

Paket-Koffer: 8-SOIC (0.154", 3.90mm Width)

Technologie: Si

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Anzahl der Kanäle: 1 Channel

Lieferanten-Geräte-Paket: 8-SO

Aufbau: Single

FET-Typ: MOSFET N-Kanal, Metalloxid

Leistung max: 4.45W

Transistor-Typ: 1 N-Channel

Drain-zu-Source-Spannung-Vdss: 12V

Eingangskapazität-Ciss-Vds: 5020pF @ 6V

FET-Funktion: Standard

Strom-Dauer-Drain-Id-25°C: 21.5A (Tc)

Rds-On-Max-Id-Vgs: 5.3 mOhm @ 12A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

Gate-Lade-Qg-Vgs: 80nC @ 4.5V

Pd-Verlustleistung: 2.5 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 32 ns 9 ns

Anstiegszeit: 18 ns 12 ns

Vgs-Gate-Source-Spannung: 8 V

ID-Dauer-Drain-Strom: 16.1 A

Vds-Drain-Source-Breakdown-Voltage: 12 V

Rds-On-Drain-Source-Widerstand: 5.3 mOhms

Transistor-Polarität: N-Kanal

Typische-Ausschaltverzögerungszeit: 85 ns 57 ns

Typische-Einschaltverzögerungszeit: 26 ns 13 ns

Kanal-Modus: Erweiterung

Tags: SI4866, SI486, SI48, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4866BDY-T1-GE3 Beschreibung

***ied Electronics & Automation: SI4866BDY-T1-GE3 N-channel MOSFET Transistor; 21 A; 12 V; 8-Pin SOIC

***ure Electronics: Single N-Channel 12 V 0.0053 Ohms Surface Mount Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 12V 21.5A 8-Pin SOIC N T/R

***et Europe: Trans MOSFET N-CH 12V 16.1A 8-Pin SOIC N T/R

***ment14 APAC: MOSFET, N CH, 12V, 21.5A, SOIC-8

***i-Key: MOSFET N-CH 12V 21.5A 8-SOIC

***Components: TRANS MOSFET N-CH 12V 16.1AN

***: N-CHANNEL 12-V (D-S) MOSFET

***ark: Mosfet, N Channel, 12V, 21.5A, Soic-8; Transistor Polarity:n Channel; Continuous Drain Current Id:21.5A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.0042Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400Mv Rohs Compliant: No

***nell: MOSFET, N CH, 12V, 21.5A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:21.5A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.0042ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:4.45W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI4866BDY-T1-GE3 DISTI # SI4866BDY-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 12V 21.5A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call	2500:$0.5527
SI4866BDY-T1-GE3 DISTI # SI4866BDY-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 12V 21.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SI4866BDY-T1-GE3 DISTI # SI4866BDY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 12V 21.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI4866BDY-T1-GE3 DISTI # SI4866BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 12V 16.1A 8-Pin SOIC N T/R (Alt: SI4866BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.8589 5000:€0.6159 10000:€0.4999 15000:€0.4419 25000:€0.4229
SI4866BDY-T1-GE3 DISTI # 69W7204	Vishay Intertechnologies	MOSFET, N CHANNEL, 12V, 21.5A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:21.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.0042ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV , RoHS Compliant: Yes	0	1:$0.4720 10:$0.4720 25:$0.4720 50:$0.4720 100:$0.4720 250:$0.4720 500:$0.4720
SI4866BDY-T1-GE3. DISTI # 30AC0172	Vishay Intertechnologies	N-CHANNEL 12-V (D-S) MOSFET , ROHS COMPLIANT: NO	0
SI4866BDY-T1-GE3 DISTI # 70616979	Vishay Siliconix	SI4866BDY-T1-GE3 N-channel MOSFET Transistor,21 A,12 V,8-Pin SOIC RoHS: Compliant	0	100:$1.0000 200:$0.9800 500:$0.9500 1000:$0.9100 2500:$0.8500
SI4866BDY-T1-GE3 DISTI # 781-SI4866BDY-T1-GE3	Vishay Intertechnologies	MOSFET 12V Vds 8V Vgs SO-8 RoHS: Compliant	1	1:$1.4900 10:$1.2300 100:$0.9410 500:$0.8090 1000:$0.7110 2500:$0.7100
SI4866BDY-T1-GE3 DISTI # 8181309P	Vishay Intertechnologies	TRANS MOSFET N-CH 12V 16.1AN, RL	50	100:£0.6810 500:£0.5850 1500:£0.5300 2500:£0.5190
SI4866BDY-T1-GE3	Vishay BLH		175	4:$1.3125 17:$0.8531 60:$0.4922
SI4866BDY-T1-GE3	Vishay Intertechnologies		140	70:$0.5250 15:$0.8750 1:$1.7500
SI4866BDY-T1-GE3	Vishay Siliconix		8	3:$1.6564 1:$2.0705
SI4866BDY-T1-GE3 DISTI # 2478955	Vishay Intertechnologies	N CHANNEL MOSFET, 12V, 21.5A, SOIC, FULL RoHS: Compliant	0	2500:£0.6240
SI4866BDY-T1-GE3 DISTI # 2478955	Vishay Intertechnologies	N CHANNEL MOSFET, 12V, 21.5A, SOIC, FULL REEL RoHS: Compliant	0	2500:$0.8750
SI4866BDY-T1-GE3 DISTI # 2335321	Vishay Intertechnologies	MOSFET, N CH, 12V, 21.5A, SOIC RoHS: Compliant	0	1:$2.3700 10:$1.9500 100:$1.5000 500:$1.2900 1000:$1.1300 2500:$1.1300
SI4866DY-T1-E3	Vishay Intertechnologies	MOSFET 12 Volt 11 Amp 3.0W RoHS: Compliant	Americas -
SI4866BDY-T1-GE3	Vishay Intertechnologies	MOSFET 12V Vds 8V Vgs SO-8 RoHS: Compliant	Americas -

Verwandte Produkte

Bild

Teil #

Beschreibung

Mfr.#: SI4866BDY-T1-GE3

OMO.#: OMO-SI4866BDY-T1-GE3

MOSFET 12V Vds 8V Vgs SO-8

Mfr.#: SI4866BDY-T1-E3

OMO.#: OMO-SI4866BDY-T1-E3-VISHAY

MOSFET N-CH 12V 21.5A 8-SOIC

Mfr.#: SI4866BDY-T1-GE3

OMO.#: OMO-SI4866BDY-T1-GE3-VISHAY

MOSFET N-CH 12V 21.5A 8-SOIC

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1000
Menge eingeben:

Der aktuelle Preis von SI4866BDY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,74 $~~; ~~0,74 $~~

10: ~~0,70 $~~; ~~7,01 $~~

100: ~~0,66 $~~; ~~66,45 $~~

500: ~~0,63 $~~; ~~313,80 $~~

1000: ~~0,59 $~~; ~~590,60 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SI4866 7
SI486 19
SI48 447
SI4 2994

SI4866BDY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes