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SIRC10DP-T1-GE3

SIRC10DP-T1-GE3
Mfr. #:
SIRC10DP-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 30V 60A POWERPAKSO-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIRC10DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIRC10DP-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIRC1, SIRC, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
MOSFET N-Channel 30V 60A 8-Pin PowerPAK SO T/R
***ment14 APAC
MOSFET, N CH+SCHOTTKY, 30V, POWERPAK SO
***i-Key
MOSFET N-CH 30V 60A POWERPAKSO-8
***ark
Mosfet, N Ch+Schottky, 30V, Powerpak So; Transistor Polarity:n Channel + Schottky; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0029Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Rohs Compliant: Yes
SkyFET® Power MOSFETs
Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SIRC10DP-T1-GE3
DISTI # V36:1790_17600302		Vishay IntertechnologiesN-Channel 30 V (D-S) MOSFET with Schottky Diode0
  • 6000000:$0.3443
  • 3000000:$0.3444
  • 600000:$0.3541
  • 60000:$0.3688
  • 6000:$0.3712
SIRC10DP-T1-GE3
DISTI # SIRC10DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5490In Stock
  • 1000:$0.4096
  • 500:$0.5189
  • 100:$0.6281
  • 10:$0.8060
  • 1:$0.9000
SIRC10DP-T1-GE3
DISTI # SIRC10DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5490In Stock
  • 1000:$0.4096
  • 500:$0.5189
  • 100:$0.6281
  • 10:$0.8060
  • 1:$0.9000
SIRC10DP-T1-GE3
DISTI # SIRC10DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 15000:$0.3394
  • 6000:$0.3526
  • 3000:$0.3712
SIRC10DP-T1-GE3
DISTI # SIRC10DP-T1-GE3		Vishay IntertechnologiesMOSFET N-Channel 30V 60A 8-Pin PowerPAK SO T/R (Alt: SIRC10DP-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel		Asia - 0
    SIRC10DP-T1-GE3
    DISTI # SIRC10DP-T1-GE3    		Vishay IntertechnologiesMOSFET N-Channel 30V 60A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIRC10DP-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 6000
    Container: Reel    		Americas - 0
    • 60000:$0.3229
    • 30000:$0.3319
    • 18000:$0.3419
    • 12000:$0.3559
    • 6000:$0.3669
    SIRC10DP-T1-GE3
    DISTI # SIRC10DP-T1-GE3    		Vishay IntertechnologiesMOSFET N-Channel 30V 60A 8-Pin PowerPAK SO T/R (Alt: SIRC10DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.4229
    • 18000:€0.4419
    • 12000:€0.4999
    • 6000:€0.6159
    • 3000:€0.8589
    SIRC10DP-T1-GE3
    DISTI # 20AC3880    		Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET W/SCHOTT0
    • 10000:$0.3210
    • 6000:$0.3290
    • 4000:$0.3410
    • 2000:$0.3790
    • 1000:$0.4170
    • 1:$0.4350
    SIRC10DP-T1-GE3
    DISTI # 78-SIRC10DP-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		8844
    • 1:$0.8800
    • 10:$0.7270
    • 100:$0.5580
    • 500:$0.4790
    • 1000:$0.3780
    • 3000:$0.3530
    • 6000:$0.3350
    • 9000:$0.3230
    • 24000:$0.3130
    SIRC10DP-T1-GE3
    DISTI # 2747684    		Vishay IntertechnologiesMOSFET, N CH+SCHOTTKY, 30V, POWERPAK SO5940
    • 500:£0.3480
    • 250:£0.3770
    • 100:£0.4050
    • 10:£0.5280
    • 1:£0.6380
    SIRC10DP-T1-GE3
    DISTI # 2747684    		Vishay IntertechnologiesMOSFET, N CH+SCHOTTKY, 30V, POWERPAK SO
    RoHS: Compliant    		5807
    • 1000:$0.6180
    • 500:$0.7820
    • 100:$0.9470
    • 10:$1.2200
    • 1:$1.3600
    Bild Teil # Beschreibung
    SIRC10DP-T1-GE3

    Mfr.#: SIRC10DP-T1-GE3

    OMO.#: OMO-SIRC10DP-T1-GE3

    		 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
    SIRC10DP-T1-GE3

    Mfr.#: SIRC10DP-T1-GE3

    OMO.#: OMO-SIRC10DP-T1-GE3-VISHAY

    		 MOSFET N-CH 30V 60A POWERPAKSO-8
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5000
    Menge eingeben:
    Der aktuelle Preis von SIRC10DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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