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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SI4410BDY-T1-E3 DISTI # SI4410BDY-T1-E3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 7.5A 8-SOIC Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI4410BDY-T1-E3 DISTI # SI4410BDY-T1-E3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 7.5A 8-SOIC Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SI4410BDY-T1-E3 DISTI # SI4410BDY-T1-E3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 7.5A 8-SOIC Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SI4410BDY-T1-E3 DISTI # 35K3458 | Vishay Intertechnologies | N CHANNEL MOSFET, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:10A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,No. of Pins:8Pins RoHS Compliant: Yes RoHS: Compliant | 0 | |
| SI4410BDY-T1-E3 DISTI # 06J7687 | Vishay Intertechnologies | N CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:10A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,Power Dissipation Pd:2.5W RoHS Compliant: Yes RoHS: Compliant | 0 | |
| SI4410BDY-T1-E3 DISTI # 70026214 | Vishay Siliconix | N-CHANNEL 30-V (D-S) MOSFET RoHS: Not Compliant | 0 |
|
| SI4410BDY-T1-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI4134DY-T1-GE3 | Americas - 57500 |
|
| SI4410BDY-T1-E3 | Vishay Siliconix | 7500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 5007 |
|
| SI4410BDY-T1-E3 | Vishay Siliconix | 7500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 447 |
|
| SI4410BDY-T1-E3 | Vishay Intertechnologies | 7500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 1881 |
|
| SI4410BDY-T1-E3 | Vishay Intertechnologies | 7500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 1873 |
|
| SI4410BDY-T1-E3 | SILI | 10000 | ||
| SI4410BDY-T1-E3 | Vishay Intertechnologies | 2352 | ||
| SI4410BDY-T1-E3 | Vishay Intertechnologies | 10567 | ||
| SI4410BDYT1E3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 505 | |
| SI4410BDY-T1-E3 DISTI # 1794995 | Vishay Intertechnologies | N CH MOSFET RoHS: Compliant | 0 |
|
| SI4410BDY-T1-E3 DISTI # 1794995 | Vishay Intertechnologies | N CH MOSFET RoHS: Compliant | 0 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: SI4410BDY-T1-E3 OMO.#: OMO-SI4410BDY-T1-E3 |
MOSFET RECOMMENDED ALT 781-SI4134DY-T1-GE3 |
|
|
Mfr.#: SI4410BDY-T1-GE3 OMO.#: OMO-SI4410BDY-T1-GE3 |
MOSFET RECOMMENDED ALT 781-SI4134DY-T1-GE3 |
|
Mfr.#: SI4410BDY-T1-E3-CUT TAPE |
Neu und Original |
|
|
Mfr.#: SI4410BDY OMO.#: OMO-SI4410BDY-1190 |
Transistor: N-MOSFET, unipolar, 30V, 8A, 2.5W, SO8 |
|
|
Mfr.#: SI4410BDY-71-E3 OMO.#: OMO-SI4410BDY-71-E3-1190 |
Neu und Original |
|
|
Mfr.#: SI4410BDY-T1 OMO.#: OMO-SI4410BDY-T1-1190 |
INSTOCK |
|
Mfr.#: SI4410BDY-T1-E3 OMO.#: OMO-SI4410BDY-T1-E3-VISHAY |
MOSFET N-CH 30V 7.5A 8-SOIC |
|
|
Mfr.#: SI4410BDY-T1-E3 GE3 OMO.#: OMO-SI4410BDY-T1-E3-GE3-1190 |
Neu und Original |
|
|
Mfr.#: SI4410BDY-T1-GE3 OMO.#: OMO-SI4410BDY-T1-GE3-VISHAY |
MOSFET N-CH 30V 7.5A 8-SOIC |
|
|
Mfr.#: SI4410BDY-Y1-GE3 OMO.#: OMO-SI4410BDY-Y1-GE3-1190 |
Neu und Original |