IKW25N120T2

Mfr. #:: IKW25N120T2
Hersteller:: Infineon Technologies
Beschreibung:: IGBT Transistors LOW LOSS DuoPack 1200V 25A
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IKW25N120T2 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: IKW25N120T2 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: IGBT-Transistoren

RoHS:: Y

Technologie:: Si

Paket / Koffer:: TO-247-3

Montageart:: Durchgangsloch

Aufbau:: Single

Kollektor- Emitterspannung VCEO Max:: 1200 V

Kollektor-Emitter-Sättigungsspannung:: 1.7 V

Maximale Gate-Emitter-Spannung:: 20 V

Kontinuierlicher Kollektorstrom bei 25 C:: 50 A

Pd - Verlustleistung:: 349 W

Minimale Betriebstemperatur:: - 40 C

Maximale Betriebstemperatur:: + 175 C

Serie:: TRENCHSTOP IGBT

Verpackung:: Rohr

Höhe:: 20.95 mm

Länge:: 15.9 mm

Breite:: 5.3 mm

Marke:: Infineon-Technologien

Gate-Emitter-Leckstrom:: 200 nA

Produktart:: IGBT-Transistoren

Werkspackungsmenge:: 240

Unterkategorie:: IGBTs

Handelsname:: TRENCHSTOP

Teil # Aliase:: IKW25N120T2FKSA1 IKW25N12T2XK SP000244960

Gewichtseinheit:: 1.340411 oz

Tags: IKW25N120T2, IKW25N120T, IKW25N, IKW25, IKW2, IKW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IKW25N120T2 Beschreibung

***ical: Trans IGBT Chip N-CH 1200V 50A 349000mW Automotive 3-Pin(3+Tab) TO-247 Tube

***ment14 APAC: IGBT+ DIODE,1200V,25A,TO247; Transistor Type:IGBT; DC Collector Current:25A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:349W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; Power Dissipation Max:349W

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications

IKW25N120T2 Mehr Informationen

1200V Gen8 IGBTs: Infineon 1200V Gen8 IGBTs feature IR's latest generation trench gate field stop technology delivered in industry standard TO-247 packages to provide best-in-class performance for industrial and energy-saving applications. The Gen8 technology offers softer turn-off characteristics ideal for motor drive applications, minimizing dv/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. These Gen8 IGBTs have current ratings from 8A up to 60A with typical VCE(ON) of 1.7V, and a short-circuit rating of 10µs to reduce power dissipation, resulting in increased power density and robustness. Using thin wafer technology, 1200V Gen8 IGBTs deliver improved thermal resistance and maximum junction temperature up to 175°C.Learn More

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IKW25N120T2FKSA1 DISTI # V99:2348_06377579	Infineon Technologies AG	Trans IGBT Chip N-CH 1200V 50A 349000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	168	1000:$3.6870 500:$4.2890 100:$4.9710 10:$6.0550 1:$7.4327
IKW25N120T2FKSA1 DISTI # V36:1790_06377579	Infineon Technologies AG	Trans IGBT Chip N-CH 1200V 50A 349000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	0
IKW25N120T2FKSA1 DISTI # IKW25N120T2FKSA1-ND	Infineon Technologies AG	IGBT 1200V 50A 349W TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	687In Stock	720:$4.4315 240:$5.0891 25:$5.8612 10:$6.1470 1:$6.8000
IKW25N120T2FKSA1 DISTI # 27551382	Infineon Technologies AG	Trans IGBT Chip N-CH 1200V 50A 349000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	168	1000:$3.9635 500:$4.6107 100:$5.3438 10:$6.5091 2:$7.2638
IKW25N120T2 DISTI # 30580818	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 RoHS: Compliant	23	50:$4.1310 6:$4.3605
IKW25N120T2 DISTI # IKW25N120T2	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 50A 3-Pin TO-247 Tube (Alt: IKW25N120T2) RoHS: Compliant Min Qty: 240 Container: Tube	Asia - 1200	12000:$3.9462 6000:$4.0043 2400:$4.0640 1200:$4.1256 720:$4.2545 480:$4.3918 240:$4.5382
IKW25N120T2 DISTI # SP000244960	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 50A 3-Pin TO-247 Tube (Alt: SP000244960) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 1520	100:€2.9900 500:€2.9900 1000:€2.9900 50:€3.0900 10:€3.2900 25:€3.2900 1:€3.3900
IKW25N120T2 DISTI # IKW25N120T2	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 50A 3-Pin TO-247 Tube - Bulk (Alt: IKW25N120T2) RoHS: Not Compliant Min Qty: 106 Container: Bulk	Americas - 0	1060:$2.8900 530:$2.9900 318:$3.0900 212:$3.1900 106:$3.3900
IKW25N120T2 DISTI # IKW25N120T2FKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 50A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW25N120T2FKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	2400:$3.3900 1440:$3.4900 960:$3.5900 480:$3.6900 240:$3.8900
IKW25N120T2XK DISTI # IKW25N120T2XK	Infineon Technologies AG	- Bulk (Alt: IKW25N120T2XK) RoHS: Not Compliant Min Qty: 105 Container: Bulk	Americas - 0	1050:$2.9900 525:$3.0900 315:$3.1900 210:$3.2900 105:$3.3900
IKW25N120T2FKSA1 DISTI # 13T9447	Infineon Technologies AG	IGBT+ DIODE,1200V,25A,TO247,DC Collector Current:25A,Collector Emitter Saturation Voltage Vce(on):2.2V,Power Dissipation Pd:349W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,OperatingRoHS Compliant: Yes	0	500:$3.0200 250:$3.1300 100:$3.7200 50:$4.2900 25:$4.5800 10:$5.2300 1:$6.0400
IKW25N120T2 DISTI # 726-IKW25N120T2	Infineon Technologies AG	IGBT Transistors LOW LOSS DuoPack 1200V 25A RoHS: Compliant	938	1:$6.4700 10:$5.8500 25:$5.5800 100:$4.8400 250:$4.6300 500:$4.2200
IKW25N120T2	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AD RoHS: Compliant	72	1000:$3.1100 500:$3.2700 100:$3.4000 25:$3.5500 1:$3.8200
IKW25N120T2XK	Infineon Technologies AG	RoHS: Not Compliant	8	1000:$3.1600 500:$3.3200 100:$3.4600 25:$3.6100 1:$3.8900
IKW25N120T2FKSA1 DISTI # 8977403P	Infineon Technologies AG	IGBT TRENCHSTOP NCHANNEL 1.2KV 50A TO247, TU	214	100:£3.4450 40:£3.9700 20:£4.1550 4:£4.3700
IKW25N120T2FKSA1 DISTI # 8977403	Infineon Technologies AG	IGBT TRENCHSTOP NCHANNEL 1.2KV 50A TO247, PK	110	100:£3.4450 40:£3.9700 20:£4.1550 4:£4.3700 2:£4.7500
IKW25N120T2 DISTI # IKW25N120T2	Infineon Technologies AG	Transistor: IGBT,1.2kV,50A,349W,TO247-3	97	1:$6.2900 3:$5.5300 10:$4.4900 25:$4.1800 100:$3.7700
IKW25N120T2FKSA1 DISTI # 1832382	Infineon Technologies AG	IGBT+ DIODE,1200V,25A,TO247	215	500:£3.1500 250:£3.3900 100:£3.6200 10:£4.3700 1:£5.5900
IKW25N120T2FKSA1 DISTI # XSKDRABS0030961	Infineon Technologies AG	Ceramic Capacitor, Multilayer, Ceramic, 6.3V,20%+Tol, 20% -Tol, X5R, 15% TC, 4.7uF, SurfaceMount,0612 RoHS: Compliant	1280 in Stock0 on Order	1280:$4.8600 240:$5.1960
IKW25N120T2 DISTI # IGBT2109	Infineon Technologies AG	IGBT 1200V25A1,7VTO247-3 RoHS: Compliant	Stock DE - 1495Stock HK - 0Stock US - 0	30:$4.2600 60:$4.0000 90:$3.9300 120:$3.8600 180:$3.6300
IKW25N120T2	Infineon Technologies AG		240	1:¥45.8584 10:¥40.7429 25:¥38.8513 100:¥33.6856
IKW25N120T2FKSA1 DISTI # IKW25N120T2	Infineon Technologies AG	1200V 50A 349W TO247 RoHS: Compliant	421	1:€6.9600 10:€3.9600 50:€2.9600 100:€2.8500
IKW25N120T2	Infineon Technologies AG	1200V,50A,IGBT with Anti-Parallel Diode	60	1:$5.7800 100:$4.8200 500:$4.2500 1000:$4.1300

Verwandte Produkte

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	Mfr.#: APT30D120BG OMO.#: OMO-APT30D120BG	Rectifiers FG, FRED, 1200V, TO-247, RoHS
	Mfr.#: NTF5P03T3G OMO.#: OMO-NTF5P03T3G	MOSFET 30V 5.2A P-Channel
	Mfr.#: SN74AC14N OMO.#: OMO-SN74AC14N	Inverters Hex Schmitt-Trigger
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	Mfr.#: TPS565201DDCR OMO.#: OMO-TPS565201DDCR	Switching Voltage Regulators 4.5V to 17V, 5A Synch Step-Down VReg
	Mfr.#: APT30D120BG OMO.#: OMO-APT30D120BG-MICROSEMI	Rectifiers
	Mfr.#: APT15DQ120KG OMO.#: OMO-APT15DQ120KG-MICROSEMI	Rectifiers

Verfügbarkeit

Aktie:: 812
Auf Bestellung:: 2795
Menge eingeben:

Der aktuelle Preis von IKW25N120T2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~6,47 $~~; ~~6,47 $~~

10: ~~5,85 $~~; ~~58,50 $~~

25: ~~5,58 $~~; ~~139,50 $~~

100: ~~4,84 $~~; ~~484,00 $~~

250: ~~4,63 $~~; ~~1 157,50 $~~

500: ~~4,22 $~~; ~~2 110,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IKW25N120T2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes