IGW03N120H2

IGW03N120H2
Mfr. #:
IGW03N120H2
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors HIGH SPEED 2 TECH 1200V 3A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IGW03N120H2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1200 V
Maximale Gate-Emitter-Spannung:
20 V
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
IGW03N120
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
9.6 A
Höhe:
20.95 mm
Länge:
15.9 mm
Breite:
5.3 mm
Marke:
Infineon-Technologien
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
240
Unterkategorie:
IGBTs
Teil # Aliase:
IGW03N120H2FKSA1 IGW3N12H2XK SP000014182
Gewichtseinheit:
1.340411 oz
Tags
IGW03, IGW0, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 9.6A 62500mW 3-Pin(3+Tab) TO-247 Tube
***ment14 APAC
IGBT, N, 1200V, 3.9A, TO-247; Transistor Type:IGBT; DC Collector Current:9.6A; Collector Emitter Voltage Vces:2.8V; Power Dissipation Pd:62.5W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:3.9A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:62.5W; Power Dissipation Pd:62.5W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ineon
Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies. | Summary of Features: Loss reduction in resonant circuits; Temperature stable behavior; Parallel switching capability; Tight parameter distribution; E off optimized for IC =1A | Target Applications: SMPS
Teil # Mfg. Beschreibung Aktie Preis
IGW03N120H2FKSA1
DISTI # IGW03N120H2FKSA1-ND
Infineon Technologies AGIGBT 1200V 9.6A 62.5W TO247-3
RoHS: Compliant
Min Qty: 240
Container: Tube
Limited Supply - Call
  • 240:$2.3438
IGW03N120H2XK
DISTI # IGW03N120H2FKSA1
Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IGW03N120H2FKSA1)
RoHS: Compliant
Min Qty: 480
Container: Tube
Americas - 0
  • 480:$1.5900
  • 960:$1.4900
  • 1440:$1.4900
  • 2400:$1.3900
  • 4800:$1.3900
IGW03N120H2Infineon Technologies AGInsulated Gate Bipolar Transistor, 9.6A I(C), 1200V V(BR)CES, N-Channel, TO-247AD
RoHS: Compliant
60
  • 1000:$1.4600
  • 500:$1.5300
  • 100:$1.6000
  • 25:$1.6600
  • 1:$1.7900
IGW03N120H2
DISTI # 726-IGW03N120H2
Infineon Technologies AGIGBT Transistors HIGH SPEED 2 TECH 1200V 3A
RoHS: Compliant
0
    IGW03N120H2FKSA1
    DISTI # N/A
    Infineon Technologies AGIGBT Transistors IGBT PRODUCTS0
      IGW03N120H2
      DISTI # 1471730
      Infineon Technologies AGIGBT, N, 1200V, 3.9A, TO-247
      RoHS: Compliant
      0
      • 1:$4.8000
      • 10:$4.0900
      • 100:$3.5500
      • 250:$3.3500
      • 500:$3.0300
      • 1000:$2.5600
      • 2500:$2.4300
      • 5000:$2.4300
      Bild Teil # Beschreibung
      IGW03N120H2

      Mfr.#: IGW03N120H2

      OMO.#: OMO-IGW03N120H2

      IGBT Transistors HIGH SPEED 2 TECH 1200V 3A
      IGW03N120H2FKSA1

      Mfr.#: IGW03N120H2FKSA1

      OMO.#: OMO-IGW03N120H2FKSA1

      IGBT Transistors IGBT PRODUCTS
      IGW03N120H2 G03H1202

      Mfr.#: IGW03N120H2 G03H1202

      OMO.#: OMO-IGW03N120H2-G03H1202-1190

      Neu und Original
      IGW03N120H2FKSA1

      Mfr.#: IGW03N120H2FKSA1

      OMO.#: OMO-IGW03N120H2FKSA1-INFINEON-TECHNOLOGIES

      IGBT 1200V 9.6A 62.5W TO247-3
      IGW03N120H2XK

      Mfr.#: IGW03N120H2XK

      OMO.#: OMO-IGW03N120H2XK-1190

      Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IGW03N120H2FKSA1)
      IGW03N120H2

      Mfr.#: IGW03N120H2

      OMO.#: OMO-IGW03N120H2-126

      IGBT Transistors HIGH SPEED 2 TECH 1200V 3A
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2500
      Menge eingeben:
      Der aktuelle Preis von IGW03N120H2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      3,03 $
      3,03 $
      10
      2,57 $
      25,70 $
      100
      2,23 $
      223,00 $
      250
      2,11 $
      527,50 $
      500
      1,90 $
      950,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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