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FFSP20120A

FFSP20120A
Mfr. #:
FFSP20120A
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
Schottky Diodes & Rectifiers 1200V 20A Silicon Carbide Schtky Diode
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FFSP20120A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FFSP20120A Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Schottky-Dioden und Gleichrichter
RoHS:
Y
Produkt:
Schottky-Siliziumkarbid-Dioden
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-2
Wenn - Vorwärtsstrom:
20 A
Vrrm - Repetitive Sperrspannung:
1.2 kV
Vf - Durchlassspannung:
1.45 V
Ifsm - Vorwärtsstoßstrom:
135 A
Aufbau:
Single
Technologie:
SiC
Ir - Gegenstrom:
200 uA
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
FFSP20120A
Verpackung:
Rohr
Marke:
ON Semiconductor / Fairchild
Pd - Verlustleistung:
340 W
Produktart:
Schottky-Dioden und Gleichrichter
Werkspackungsmenge:
800
Unterkategorie:
Dioden & Gleichrichter
Vr - Sperrspannung:
1.2 kV
Gewichtseinheit:
0.076192 oz
Tags
FFSP2, FFSP, FFS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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    2019-06-10
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Rectifier Diode Schottky 1.2KV 20A 2-Pin(2+Tab) TO-220 Tube
***ure Electronics
Rectifier Diode, Schottky, 20A, 1200V Carbide, TO-220AC
***emi
SiC Diode, 1200V, 20A, TO-220-2
***rchild Semiconductor
SiC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material - Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost. Its high reliability ensures robust 0toperation during surge or over-voltage conditions
FFSP SiC Schottky Diodes
ON Semiconductor FFSP SiC (Silicon Carbide) Schottky Diodes are designed to leverage the advantages of Silicon Carbide over Silicon (Si) devices. FFSP SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also feature temperature independent switching characteristics and excellent thermal performance. This results in improved system efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
1200V SiC Schottky Diodes
ON Semiconductor 1200V Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
Silicon Carbide Schottky Diodes
ON Semiconductor Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.  ON Semiconductor offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.
Teil # Mfg. Beschreibung Aktie Preis
FFSP20120A
DISTI # V99:2348_16116319		ON SemiconductorDiode Schottky 1.2KV 20A Rail240
  • 1000:$6.0350
  • 500:$6.4860
  • 250:$7.3180
  • 100:$7.6150
  • 25:$8.4200
  • 10:$8.9149
  • 1:$9.6900
FFSP20120A
DISTI # FFSP20120A-ND		ON SemiconductorDIODE SCHOTTKY 1.2KV 20A TO220-2
RoHS: Compliant
Min Qty: 1
Container: Tube		565In Stock
  • 100:$8.5843
  • 10:$10.3690
  • 1:$11.4800
FFSP20120A
DISTI # 25895795		ON SemiconductorDiode Schottky 1.2KV 20A Rail240
  • 100:$7.6150
  • 25:$8.4200
  • 10:$8.9149
  • 1:$9.6900
FFSP20120A
DISTI # FFSP20120A		ON Semiconductor1200V SiC SBD 20A - Rail/Tube (Alt: FFSP20120A)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 800:$5.9900
  • 1600:$5.8900
  • 3200:$5.7900
  • 4800:$5.7900
  • 8000:$5.5900
FFSP20120A
DISTI # FFSP20120A		ON Semiconductor1200V SiC SBD 20A (Alt: FFSP20120A)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€7.3900
  • 10:€6.6900
  • 25:€6.4900
  • 50:€6.1900
  • 100:€5.9900
  • 500:€5.7900
  • 1000:€5.3900
FFSP20120A
DISTI # 512-FFSP20120A		ON SemiconductorSchottky Diodes & Rectifiers 1200V 20A Silicon Carbide Schtky Diode
RoHS: Compliant		242
  • 1:$10.9300
  • 10:$9.8800
  • 25:$9.4200
  • 100:$8.1800
  • 250:$7.8100
  • 500:$7.1200
  • 1000:$6.2100
FFSP20120A
DISTI # C1S541901575560		ON SemiconductorDiode Schottky 1.2KV 20A 2-Pin(2+Tab) TO-220 Tube240
  • 100:$7.6160
  • 25:$8.4210
  • 10:$8.9160
  • 1:$9.6910
Bild Teil # Beschreibung
IRF100P218XKMA1

Mfr.#: IRF100P218XKMA1

OMO.#: OMO-IRF100P218XKMA1

 MOSFET TRENCH_MOSFETS
FFSPF1065A

Mfr.#: FFSPF1065A

OMO.#: OMO-FFSPF1065A

 Schottky Diodes & Rectifiers 650V 10A SIC SBD
FFSH2065BDN-F085

Mfr.#: FFSH2065BDN-F085

OMO.#: OMO-FFSH2065BDN-F085

 Schottky Diodes & Rectifiers 650V 20A SIC SBD
STPSC20H12D

Mfr.#: STPSC20H12D

OMO.#: OMO-STPSC20H12D

 Schottky Diodes & Rectifiers 1200V power Schottky silicon-carbide diode
STPSC20065DY

Mfr.#: STPSC20065DY

OMO.#: OMO-STPSC20065DY

 Schottky Diodes & Rectifiers Automotive 650 V power Schottky silicon carbide diode
SCS220KGHRC

Mfr.#: SCS220KGHRC

OMO.#: OMO-SCS220KGHRC

 Schottky Diodes & Rectifiers 1200V 20A SiC SBD AEC-Q101 Qualified
IDH20G120C5XKSA1

Mfr.#: IDH20G120C5XKSA1

OMO.#: OMO-IDH20G120C5XKSA1

 Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
C4D20120A

Mfr.#: C4D20120A

OMO.#: OMO-C4D20120A

 Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 20A
STPSC20H12D

Mfr.#: STPSC20H12D

OMO.#: OMO-STPSC20H12D-STMICROELECTRONICS

 DIODE SCHOTTKY 1.2KV 20A TO220AC
SCS220KGHRC

Mfr.#: SCS220KGHRC

OMO.#: OMO-SCS220KGHRC-ROHM-SEMI

 DIODE SCHOTTKY 1200V 20A TO220-2
Verfügbarkeit
Aktie:
794
Auf Bestellung:
2777
Menge eingeben:
Der aktuelle Preis von FFSP20120A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
11,40 $
11,40 $
10
10,30 $
103,00 $
25
9,82 $
245,50 $
100
8,53 $
853,00 $
250
8,15 $
2 037,50 $
500
7,43 $
3 715,00 $
1000
6,85 $
6 850,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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